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A. F. M. Anwar
Professor
Office: ITE 433
Phone: (860) 486-3979
Email: anwara@engr.uconn.edu

Education:

  • Ph.D., Electrical and Computer Engineering, Clarkson University, 1988
  • M.S., Electrical and Computer Engineering, Bangladesh University of Engineering and Technology, 1984
  • B.S., Electrical and Computer Engineering, Bangladesh University of Engineering and Technology, 1982

Research Interests:
Carrier localization in one-dimensional structures, transport in semiconductor devices; impurity diagnostics in quantum well structures and Silicon nanowires; Sb-based type-II infrared detectors; noise in semiconductor devices; power performance of GaN-based HFETs and circuits; metamorphic HEMTs, high power quantum cascade lasers.

Dr. Mehdi Anwar currently serves as a Full Professor in the Electrical and Computer Engineering department. He is the Director of the NSF funded Industry University Cooperative Research Center. He has also served as the Associate Dean for Research & Graduate Education of the School of Engineering, University of Connecticut from June 2006 till May 2009. He served as the founding Director of the Department of Homeland Security Center of Excellence from June 2007 till May 2009. Moreover, he was the interim Director of the Connecticut Global Fuel Cell Center serving from June 2007 till January 2009. He served as the interim Department Head of ECE from June 1999 – August 2001.

Dr. Anwar’s interests include localization of one-dimensional structures, transport in semiconductor devices, impurity diagnostics in quantum well structures, Sb-based type-II infrared detectors, noise in semiconductor devices, power performance of GaN-based HFETs and circuits. He has developed measurement techniques to carry out trap characterization in InP and GaN-based HEMTs and load pull setups operating at W-band while the modeling interests span a breadth of subject areas and include transport in DNA, silicon nano-wires, quantum well infrared photodetectors, stochastic quantum mechanics and noise in quantum structures. Dr. Anwar’s team pioneered noise measurement in metamorphic antimony-based-compound-semiconductor (ABCS) HEMTs with quaternary buffer/barrier and ternary. His design launched AFRL to develop the first metamorphic HEMTs with an fT around 200FGHz and Fmin of 0.82dB at 15GHz, using a 0.15 micron gate. He also predicted the inability for the channel to be pinched-off for wide quantum well devices. He has presented over 15 plenary and invited talks at national/international conferences, offered tutorials on nanosensors at Optics East, published over 170 archival journal publications and conference proceedings, co-authored three book chapters and served as principal investigator or co-principal investigator on more than $4.4 million in research grants and contracts.

Dr. Anwar was an IPA during his sabbatical leave (July 2004 – August 2005) at the Sensors Directorate, Hanscom Air Force Base, working on advanced metamorphic HEMTs and GaN-based HFETs. He serves as an Editor of the IEEE Transactions on Electron Devices (2001 – present) and am conference chair of the international conference on Terahertz Physics, Devices and Systems: Advanced Applications in Industry and Defense of the SPIE Defense, Security and Sensing (2009, 2010). He has also chaired the 2006 and 2007 Terahertz Physics, Devices and Systems Conference as part of SPIE’s Optics East. He is a member of Clarkson University’s Engineering Advisory Council and a consultant for the Sensors Directorate at Hanscom Air Force Base.

In 2007 he was elected to the rank of SPIE Fellow in 2007 for my contribution in the area of Quantum Well Infrared Detectors.

Memberships:

  • Institute of Electrical and Electronics Engineers (IEEE)
  • Electron Devices Society
  • Institute of Engineers Bangladesh
  • Bangladesh Computer Society (BCS)

HONORS AND AWARDS:

  • Fellow, SPIE
  • Senior Member, IEEE
  • Idea Certificate, Department of the Air Force, December 7, 2004.
  • Air Force Office of Scientific Research, Summer Fellowship, 1996 and 1997.

Patents:
Insulated Gate Silicon Nanowire Transistor and Method of Manufacture; IPC* Class AH01L218234F1; USPC Class: 438197, 2008.

Recent Publications:
Archival Technical Journal Publications:

  • S. Wasterlain, D. Candusso, D. Hissel, F. Harel, P. Bergman, P. Menard and A. F. M. Anwar, “Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry techniques,”Journal of Power Sources, vol. 195, Issue 4, pp. 984-993, 2010.
  • A. F. M. Anwar, Richard T. Webster and Kurt V. Smith, “Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implication,”Applied Physics Letters, vol. 88, pp. 203510-1 – 203510-3, May 15, 2006.
  • Elias W. Faraclas and A. F. M. Anwar, “AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics,”Solid-State Electronics, vol. 50, pp. 1051-1056, May/June 2006.
  • A. F. M. Anwar and Elias W. Faraclas, “Schottky barrier height in AlGaN/GaN heterostructures,”Solid-State Electronics, vol. 50, pp. 1041-1045, May/June 2006.
  • A. F. M. Anwar, Syed S. Islam and Richard T. Webster, “Response to “Comment on `Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors,” Applied Physics Letters, vol. 86, pp. 016102-1 – 016102-2, 2005.
  • Elias Faraclas, Richard T. Webster, George Brandes and A. F. M. Anwar, “Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp.750-755, 2004
  • Syed S. Islam and A.F.M. Anwar, “SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 853-859, 2004
  • Richard T. Webster and A. F. M. Anwar, “Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs,” Solid-State Electronics, vol. 48, p. 2007, 2004.
  • Elias W. Faraclas, Syed S. Islam and A. F. M. Anwar, “Growth Parameter Dependence of Gain Compression in AlGaN/GaN HFETs,”Solid-State Electronics, vol. 48, p. 1849, 2004.
  • Syed S. Islam, A. F. M. Anwar and Richard T. Webster, “A Physics Based Frequency Dispersion Model of GaN MESFETs,”IEEE TED, vol. 51, p. 846, June 2004.
  • Syed S. Islam and A. F. M. Anwar, “Self-heating and trapping effects on the RF performance of GaN MESFETs,”IEEE MTT, vol. 52, No. 4, pp. 1229-1236, 2004.
  • A. F. M. Anwar, Syed S. Islam and R. T. Webster, “ Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors,”Appl. Phys. Lett., pp. 1970-1972, March 15, 2004.
  • Kuo-Wei Liu and A. F. M. Anwar, “A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs,”Solid-State Electronics, vol. 47, pp. 763-768, 2003.
  • M. M. Jahan, K.-W. Liu and A. F. M. Anwar, “Bias Dependence of high frequency noise in heterojunction bipolar transistors,”IEEE Trans. Microwave Theory and Tech., vol. 51, p. 677, March 2003.
  • Syed S. Islam, M. Rezwan Khan and A. F. M. Anwar, “Effects of Impurity Traps on Gate Current and Trapped Charge in MOSFET,”Solid-State Electronics, vol. 47, No.2, p. 333, February 2003.
  • A. F. M. Anwar and M. M. Jahan,”A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistor,”IEEE Trans. Electron. Dev., February 2003.
  • Arif Ahmed, Syed S. Islam and A. F. M. Anwar, “Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers,”Solid-State Electronics, vol. 47, No. 2, p. 339, February 2003.
  • Syed S. Islam and A. F. M. Anwar, “Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects,”IEEE Trans. Microwave Theory and Tech., vol. 50, no. 11, p. 2474, November 2002.
  • Syed S. Islam and A. F. M. Anwar, “High Frequency GaN/AlGaN HEMT Class-E Power Amplifier,”Solid-State Electronics, vol. 46, p. 1621, October 2002
  • A. F. M. Anwar and Syed S. Islam, “Frequency Dependence of GaN/AlGaN HEMT Amplifier Using Time Domain Analysis,”Solid-State Electronics, vol. 46, p. 1507, October 2002.
  • Syed S. Islam and A, F. M. Anwar, “Temperature dependent nonlinearities in GaN/AlGaN HEMTs,”IEEE Trans. Electron. Dev., vol. 49, no. 5, p. 710, May 2002.
  • A. F. M. Anwar, Shangli Wu and Richard T. Webster, “Temperature dependent transport parameters in short GaN structures,”phys. stat. sol. (b) 228, No. 2, p. 575, November 2001.
  • Arif Ahmed, Syed S. Islam and A. F. M. Anwar, “A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series,”IEEE Trans. Microwave Theory and Tech., vol. 49, no. 9, p. 1518, September 2001.
  • A. F. M. Anwar, Shangli Wu and Richard T. Webster, “Temperature dependent transport properties in GaN, AlxGa1-xN, and InxGa1-xN semiconductors,”IEEE Trans. Electron Dev., March 2001.
  • K.-W. Liu and A. F. M. Anwar, “An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors,”Microelectronics Journal, vol. 32, p. 85, 2001.
  • Richard T. Webster, Shangli Wu and A. F. M. Anwar, “Impact ionization in InAlAs/InGaAs/InAlAs HEMTs,”IEEE Electron Dev. Lett., vol. 21, no. 5, p. 193, May 2000.
  • Shean-Yih Chiu and A. F. M. Anwar, “ Base transit time in abrupt GaN/InGaN/GaN HBTs,”IEEE Trans. Electron Dev., vol. 47, no. 4, p. 662, April 2000.
  • Shean-Yih Chiu and A. F. M. Anwar, “Effect of surface recombination on the early voltage in HBTs,”Semicond. Sci. Tecnol., vol. 14, p. 840, Oct. 99.
  • Shangli WuRichard T. Webster A.F.M. Anwar, ”Physics-Based Intrinsic Model for AlGaN/GaN HEMTs,” MRS Internet J. Nitride Semicond. Res. 4S1, G6.58 (1999).
  • Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu, “Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs,”MRS Internet J. Nitride Semicond. Res. 4S1, G6.7 (1999).
  • Kevin R. Lefebvre and A. F. M. Anwar, “Electron-phonon interaction within an unbiased and biased quantum well,”IEEE Jour. Quantum Electron., vol. 35, No. 2, p. 216, 1999.
  • A. F. M. Anwar and R. T. Webster, “Energy bandgap of AlxGa1-xAs1-ySby and conduction band discontinuity of AlxGa1-xAs1-ySby/InAs and AlxGa1-xAs1-ySby/InGaAs heterostructures,”Solid State Electron., vol 42, No. 11, p. 2101, 1998.
  • A.F.M. Anwar and Richard T. Webster, “ On the possible effects of AlGaAsSb growth parameters on the 2DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW’s,”IEEE Trans. Electron Dev., vol. 45, No. 6, pp. 1170-1175, 1998.
  • A. F. M. Anwar and Kevin R. Lefebvre, “ Electron escape via polar optical phonon interaction and tunneling from biased quantum wells,”Phys. Rev. B, vol. 57, No. 8, pp. 4584-4590, 1998.
  • Kevin R. Lefebvre and A. F. M. Anwar, “Redistribution of quantum well density of states under the influence of an electric field,”Semicond. Sci. Technol., vol. 12, pp. 1226-1230, 1997.
  • Kevin R. Lefebvre and A. F. M. Anwar,”Electron escape time from single quantum wells,”IEEE J. Quantum Electron., vol. 33, pp. 187-191, February 1997.
  • A. F. M. Anwar and Richard Webster, “An envelope function description of the quantum well form in AlGaAsSb/InAs/AlGaAsSb heterostructures,”J. Appl. Phys., vol. 80, pp. 6827-6830, December 1996.
  • Kevin R. Lefebvre and A. F. M. Anwar,”Electron and hole escape times in single quantum wells,”J. Appl. Phys., vol. 80, pp. 3595-3597, September 1996
  • M. M. Jahan and A. F. M. Anwar,”An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors”, Solid-State Electron., vol. 39, No. 6., pp. 941-948, 1996
  • M. M.Jahan and A. F. M. Anwar,”An analytical expression for base transit time in an exponentially doped base bipolar transistor,”Solid State Electron., vol. 39, No. 1, pp. 133-136, Jan. 1996
  • M. M. Jahan and A. F. M. Anwar, “Junction temperature dependence of high frequency noise in heterojunction bipolar transistors, “IEEE Electron Devices Lett., vol. 16, No. 12, pp. 551-553, Dec. 1995
  • A. F. M. Anwar, K. W. Liu and V. P. Kesan,”Noise performance of SiGe/Si MODFETs”, IEEE Trans. Elect. Dev., ED-42, p. 1841-1846, Oct. 1995.
  • M. M. Jahan and A. F. M. Anwar,”Early voltage in double heterojunction bipolar transistor,”IEEE Trans. Electron. Dev., vol. 42, No. 11, pp. 2028-2029, Nov. 1995.
  • A. F. M. Anwar, K.-W. Liu and A. N. Khondker,”A charge-control and current-voltage model for Inverted MODFETs,” IEEE Trans. Elect. Dev., ED-42, pp. 586-590, April 1995
  • A. F. M. Anwar and M. M. Jahan,”Tunneling time and bistability in asymmetric double barrier quantum well structures,”Jour. of Quantum Electronics,, vol. 31, pp. 3-7, January, 1995.
  • M. M. Jahan and A. F. M. Anwar, “Shot noise in double barrier quantum structures,”Solid-State Electronics, vol. 38, pp. 429-432, February 1995.
  • K.-W. Liu and A. F. M. Anwar,”Noise modeling for high electron mobility transistors,”IEEE Trans. Electron Dev., vol. 41, no. 11, pp. 2087-2092, 1994.
  • A. F. M. Anwar and M. M. Jahan,”DOS under the influence of external fields and phase breaking scattering,”Phys. Rev. B, vol. 50, no. 15, pp. 10864-10867, 1994.
  • A. F. M. Anwar and Mirza M. Jahan,”Self consistent calculation of traversal time is a double barrier resonant tunneling structure in the presence of magnetic field,”Phys. Rev. B., vol. 49, no. 24, pp. 17440-17443, 1994.
  • A. F. M. Anwar and K.-W. Liu, “Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,”Solid-State Electronics, vol. 37, no. 9, p. 1585-1588, 1994.
  • K.-W. Liu and A. F. M. Anwar, “An analytical model of current-voltage and dc, small-signal parameters for Si/Si1-xGex FETs,”Solid-State Electronics, vol. 37, no. 8, pp. 1570-1572, 1994.
  • Kuo-Wei Liu and A. F. M. Anwar,”A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,”Solid-State Electronics, vol. 37, no. 1, pp. 51-54, Jan. 1994.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan, “Noise in Si/Si1-xGex n-challen HEMTs and p-channel FETs,“ Simulation of Semiconductor Devices and Processes Vol. 5, Ed. S. Selberherr, H. Stippel, E. Strasser, pp. 273-276, September 1993.
  • A. F. M. Anwar, K. W. Liu and R. D. Carroll,”An envelope function description of strained layer SiGe/Si MODFETs”, Jour. Appl. Phys., vol. 74, No. 3, pp. 2064-2066, August 1993.
  • A. F. M. Anwar and K. W. Liu,”Noise properties of AlGaAs/GaAs MODFETs”, IEEE Trans. Electron. Dev., vol. ED-40, No. 6, pp. 1174-1176, June 1993.
  • A. F. M. Anwar, R. B. LaComb and M. Cahay,’ Influence of impurity scattering on the traversal time and current voltage characteristics of resonant tunneling structures”, Superlattice and Microstructures, vol. 11, No. 1, pp. 131-135, 1992.
  • M. Cahay, K. T. Dalton, G. S. Fisher and A. F. M. Anwar,”Tunneling time through resonant tunneling devices and quantum mechanical bistability,”Superlattice and Microstructures, vol. 11, No. 1, pp. 113-117, 1992.
  • A. F. M. Anwar and R. D. Carrol,”Tailoring the two dimensional electron gas distribution by selective doping of the quantum well,”The Int. Jour. for Computation and Math. in Electrical Eng., vol. 10, No. 4, pp. 269-275,1991.
  • M. Gokhale, A. F. M. Anwar, R. D. Carrol and F. C. Jain,”Monte Carlo simulation for SiGe/Si MESFETs,”The Int. Jour. for Computation and Math. in Electrical Eng., vol. 10, No. 4, p. 547-552, 1991.
  • A. N. Khondker and A. F. M. Anwar,”Approximate current voltage models for MODFETs”, IEEE Trans. Elect. Dev., vol. 37, No. 1, pp. 314-317, Jan. 1990.
  • A. F. M. Anwar, A. N. Khondker and M. R. Khan “Calculation of the traversal time in resonant tunneling devices,”Jour. Appl. Phys., vol. 65, No. 7, pp. 2761 2765, 1st April 1989.
  • A. N. Khondker, M. Rezwan Khan and A. F. M. Anwar,”Transmission line analogy of resonance tunneling: the generalized impedance concept,”Jour. Appl. Phys., Vol. 63, pp. 5191-5193, May 1988.
  • A. F. M. Anwar and A. N. Khondker, “An envelope function description of double heterojunction quantum wells,”Jour. Appl. Phys., vol. 62, No. 10, pp. 4200 4203, 15th November 1987.
  • A. N. Khondker and A. F. M. Anwar, “Analytical model for AlGaAs/GaAs heterojunction quantum wells,”Solid-State Electronics, vol. 30, pp. 847 852, August 1987.
  • A. F. M. Anwar and A. N. Khondker, “A model for Polysilicon MOSFET’s,”IEEE Trans. Elect. Dev., ED 34, pp. 1323 1330, June 1987.
  • A. N. Khondker, A. F. M. Anwar, M. A. Islam, L. Limoncelli and D. Wilson,”Charge Control Model for MODFET’s,”IEEE Trans. Elect. Dev., ED 33, pp. 1825 1826, November 1986.
  • M. A. Matin and A. F. M. Anwar,”Mutual impedance between two short monopoles in a magnetoplasma with the static magnetic field in the broadside,”Electrical and Electronic Engineering Research Bulletin, vol. 3, No. 1, p.1, 1985.

Conferences:

  • A. F. M. Anwar, “Energy Challenges for Bangladesh – A Roadmap for Sustainable Energy Solutions,” Harvard University, Cambridge, USA, October 9, 2009
  • M. S. Islam, I. Kimukin, AFM. Anwar, “A physics based model for transport in semiconductor nanowires”, SPIE Symposium on Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, Oct 1-4, Boston MA, 2006.
  • M. Saif Islam, I. Kimukin and A. F. M. Anwar, “Determination of Surface Depletion Thickness of p-doped Silicon Nanowires Synthesized Using Metal Catalyzed CVD Process”, 6th IEEE Conference on Nanotechnology, Cincinnati-Ohio, July 16-20, 2006.
  • A. F. M. Anwar, Elias Faraclas and Kurt V. Smith, “Schottky barrier height in GaN/AlGaN heterostructures,” 2005 International Semiconductor Device Research Symposium, Bethesda, Maryland, December 2005.
  • Elias W. Faraclas, A. F. M. Anwar and Richard T. Webster, “AlGaN/GaN HEMTs: Experiment and Simulation of DC characteristics,: 2005 International Semiconductor Device Research Symposium, Bethesda, Maryland, December 2005.
  • Elias W. Faraclas, Richard T. Webster, George Brandes and A. F. M. Anwar, ” Dependence of RF performance on GaN/AlGaN HEMTs upon barrier AlGaN layer thickness and mole fraction variation,” IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, NY, p. 63-64, August 2004.
  • Richard T. Webster and A. F. M. Anwar, “Temperature dependence of impact ionization in AlGaAsSb/InGaAs/AlGaAsSb Metamorphic HEMTs,” IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, NY, p. 83-84, August 2004.
  • Syed S. Islam and A. F. M. Anwar, “SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier,” IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, NY, p. 118-119, August 2004.
  • Syed S. Islam and A. F. M. Anwar, “BSIM3v3 Model of AlGaN/GaN HEMT: Design of Class E Power Amplifier and VCO,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 2004.
  • Richard T. Webster and A. F. M. Anwar, “AlGaAsSb/InGaAs/AlGaAsSb Metamorphic HEMTs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 2004.
  • Elias Faraclas, Syed S. Islam and A. F. M. Anwar, ” Growth dependence of gain compression in AlGaN/GaN HFETs,” 2003 International Semiconductor Device Research Symposium, p. 110, Washington DC 2003.
  • Syed S. Islam and A. F. M. Anwar, “BSIM3v3 parameter extraction and design of VCO using SiGe Hetero-CMOS,” 2003 International Semiconductor Device Research Symposium, p. 168, Washington DC 2003.
  • Richard T. Webster and A. F. M. Anwar, “Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs,” 2003 International Semiconductor Device Research Symposium, p. 186, Washington DC 2003.
  • Syed S. Islam, M. N. Rahman and A. F. M. Anwar, ” Barrier thickness and mole fraction dependence of power performance of undoped supply layer AlGaN/GaN HFETs,” 2003 International Semiconductor Device Research Symposium, p. 441, Washington DC 2003.
  • Richard T. Webster, A. F. M. Anwar, L. Heaton, K. Nichols and S. Duncan, ” Impact ionization in AlGaAsSb/InGaAs/AlGaAsSb Metamorphic HEMTs,” Proc. 2003 International Conference on Indium Phosphide and Related Materials, p. 233, May 2003.
  • Syed S. Islam and A. F. M. Anwar, “A physics based model of frequency dependent characteristics of GaN MESFETs,” Proc. Device Research Conf., Salt Lake City, June 2003.
  • Syed S. Islam and A. F. M. Anwar, ” Analysis of RF performance of GaN MESFETs including self-heating and trapping effects,” 2003 IEEE MTT-s Digest, p. 459, Philadelphia, June 2003.
  • Richard T. Webster, A. F. M. Anwar, John L. Heaton, Kirby Nichols and Scott Duncam, “AlGaAsSb/InGaAs/AlGaAsSb Metamorphic HEMTs,” 2002 IEEE Lester Eastman Conference on High Performance Devices, p. 34, Delaware, August 2002.
  • Syed S. Islam and A. F. M. Anwar, “Thermal and Trapping Effects on RF power performance in GaN MESFETs,” 2002 IEEE Lester Eastman Conference on High Performance Devices, p. 82, Delaware, August 2002.
  • Syed S. Islam and A. F. M. Anwar, “Design of GaN/AlGaN HEMT class-E power amplifiers considering trapping and thermal effects,” 2002 IEEE Lester Eastman Conference on High Performance Devices, p. 98, Delaware, August 2002.
  • Syed S. Islam and A. F. M. Anwar, “Large Signal Modeling of GaN FET and Nonlinearity Analysis Using Volterra Series,” Proceedings of the 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, p. 267, Seattle, June 2002.
  • Arif Ahmed, Syed S. Islam and A. F. M. Anwar, “Gain Compression in GaN HEMT Amplifiers,” Proc. 2001 International Semiconductor Device Research Symposium, p. 205, December 5-7, 2001, Washington, DC.
  • Syed S. Islam, “GaN/AlGaN HEMT microwave class-E amplifier,” Proc. 2001 International Semiconductor Device Research Symposium, p. 446, December 5-7, 2001, Washington, DC.
  • A. F. M. Anwar and Syed S. Islam, “RF performance of GaN/AlGaN HEMT amplifier,” Proc. 2001 International Semiconductor Device Research Symposium, p. 209, December 5-7, 2001, Washington, DC.
  • Syed S. Islam, M. Rezwan Khan and A. F. M. Anwar, “Effects of impurity traps on gate current and trapped charge in MOSFETs,” Proc. 2001 International Semiconductor Device Research Symposium, p. 98, December 5-7, 2001, Washington, DC.
  • Arif Ahmed, S. S. Islam and A. F. M. Anwar,” Temperature dependence of intermodulation and linearity in GaN based devices,” 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Ed. L. Boglione, pp. 275-278, Arizona, 2001.
  • A.F. M. Anwar, Shangli Wu and R. T. Webster,” Temperature Dependent Transport Parameters in Short GaN Structures,” Proceedings of the 4th International Conference on Nitride Semiconductors – Part B, Fernando A. Ponce and Abigail Bell (Eds.), p. 575-578, Denver 2001.
  • Shean-Yih Chiu and A. F. M. Anwar, “High frequency microwave characteristics of HBTs,” Proc. 10th International Workshop on the Physics of Semiconductor Devices, Ed. Vikram Kumar and S. K. Agarwal, pp. 546-549, Delhi, December, 1999.
  • Shangli Wu and A. F. M. Anwar, “Monte Carlo simulation in submicron GaAs n+nn+ diodes,” Proc. 10th International Workshop on the Physics of Semiconductor Devices, Ed. Vikram Kumar and S. K. Agarwal, pp. 550-553, Delhi, December, 1999.
  • Mirza M. Jahan and A. F. M. Anwar, “Noise in SiGe/Si HBTs,” 10th International Workshop on the Physics of Semiconductor Devices, Ed. Vikram Kumar and S. K. Agarwal, Delhi, December, 1999
  • Shangli Wu and A.F.M. Anwar, “Monte Carlo simulation in Sub-micron GaN n+nn+ Diodes”, Proceedings ISDRS, December, 1999
  • Shean-Yih Chiu and A. F. M. Anwar, “Non-linearity Analysis of HBTs”, Proceedings ISDRS, December, 1999
  • Gregory von Winckel and A. F. M. Anwar “Photon Absorption Properties of Biased Quantum Wells”, Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 2000.
  • Shangli Wu and A.F.M. Anwar, “Non-equilibrium transport in Sub-micron GaN n+nn+ Diodes”, Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 2000.
  • S. Chiu, A. F. M. Anwar and S. Wu, “Base transit time in GaN-based HBTs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 1999.
  • S. Wu, R. T. Webster and A. F. M. Anwar, “Physics based simulation for AlGaN/GaN HEMTs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 1999.
  • K. R. Lefebvre and A. F. M. Anwar, “An investigation of the electron escape time within a biased AlGaN/GaN quantum well,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 1999.
  • Shangli Wu, R. T. Webster and A. F. M. Anwar, “GaN HEMT physics based model: transport, quantum well, current-voltage and small signal,” MRS Fall Meeting, Nov 30 – Dec 4, Boston, 1998.
  • Shean-Yi Chiu and A. F. M. Anwar, “Base transit time in abrupt GaN/InGaN/GaN HBTs,” MRS Fall Meeting, Nov 30 – Dec 4, Boston, 1998.
  • A. F. M. Anwar and Kevin R. Lefebvre, “Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well,” Proc. SPIE, Photodetectors: Materials and Devices III, vol. 3287, pp. 179-186, 1998.
  • Kevin R. Lefebvre, A. F. M. Anwar, “Broadening in the Absorption Line Through a Redistribution of the Density of States”, Proc. SPIE, Photodetectors: Materials and Devices III, vol. 3287, pp. 952-959, 1998.
  • Shean-Yih and A. F. M. Anwar, “Effect of surface recombination of HBT performance,” Proceedings ISDRS, pp. 89-92, 1997.
  • Richard T. Webster, A. F. M. Anwar, “A model for AlGaAsSb/InGaAs/AlGaAsSb HEMTs,” Proceedings ISDRS, pp. 93-96, 1997.
  • Kevin R. Lefebvre and A. F. M. Anwar, “Dark current in AlGaAsSb/InGaAs/AlGaAsSb QWIPs,” Proceedings ISDRS, pp. 297-300, 1997
  • Shangli Wu, Richard T. Webster, A. F. M. Anwar, ” Electron transport properties of zinc-blend Ga1-xAlxN,” Proceedings ISDRS, pp. 385-388, 1997
  • Kevin R. Lefebvre and A. F. M. Anwar, “An Investigation of the electron escape time within a biased AlGaN/GaN quantum wells,” MRS Symposium Proc. Vol 482, Boston, 1997
  • Richard T. Webster, A. F. M. Anwar, “New method of computing band offsets and its application to AlGaN/GaN heterostructures,” MRS Symposium Proc. Vol 482, p. 929, 1998.
  • Richard T. Webster, A. F. M. Anwar and Shangli Wu, “Impact ionization in InP-based HEMTs,” Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp. 172-181, August 1997.
  • Kevin R. Lefebvre and A. F. M. Anwar, “Escape time of holes from a biased quantum well”, CMOC, CT, March, 1997.
  • Kevin R. Lefebvre and A. F. M. Anwar, “Electrorn escape dynamics from a biased quantum well”, SPIE Physics and Simulation of Optoelectronic Devices V, California, Febuary, 1997.
  • Kuo-Wei Liu and A. F. M. Anwar, “An Analytical Characterization of Current-Voltage Characteristics and Samll-Signal Parameters for GaAs/AlGaAs Inverted HEMTs,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD’96), Australian National University, Canberra, Australia, 8-11 December 1996.
  • Kuo-Wei Liu and A. F. M. Anwar, “Investigation of Small-Signal Parameters and Noise Characterization of Si/SiGe FETs,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD’96), Australian National University, Canberra, Australia, 8-11 December 1996.
  • K. W. Liu, A. F. M. Anwar and C.J. Wu, “An analytical moise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs,” Semiconductor and Semi-Insulating Materials Conference, Taipei, Taiwan, April, 1996.
  • K. R. Lefebvre and A. F. M. Anwar, “Energy dependence of the density of states for a quantum well under the influence of an electric field,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 21, 1996.
  • M. M. Jahan, K. R. Lefebvre and A. F. M. Anwar, “Behavior of shot noise in SiGe/Si double barrier resonant tunneling structures,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 21, 1996.
  • K. W. Liu, R. D. Carroll, S. Y. Chiu and A. F. M. Anwar, “High frequency noise performance of SiGe/Si MOSFETs,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 21, 1996.
  • Kuo-Wei Liu and A. F. M. Anwar, “An analytical characterization of super-low noise InAlAs/InGaAs/InAlAs/InP HEMTs,” IEEE Semiconducting and Insulating Materials Conference (IEEE SIMC-9), France, 1995.
  • Kuo-Wei Liu and A. F. M. Anwar, “Noise performance of SiGe/Si based FETs,” IEEE Semiconducting and Insulating Materials Conference (IEEE SIMC-9), France, 1995.
  • Kuo-Wei Liu and A. F. M. Anwar, “An analytical characterization for IMODFETs,” IEEE Semiconducting and Insulating Materials Conference (IEEE SIMC-9), France, 1995.
  • K. W. Liu, R. D. Carroll, S. Y. Chiu and A. F. M. Anwar, “High frequency noise performance of SiGe/Si MOSFETs,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 21, 1996.
  • A. F. M. Anwar and M. M. Jahan, “Noise resistance of heterojunction bipolar transistors,” Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp. 296-302, August 1995.
  • A. F. M. Anwar and M. M. Jahan, “Far infrared Ga1-xInxSb/InAs-based strained layer superlattice detectors grown by OMVPE,” Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp. 288-295, August 1993.
  • Roger D. Carroll, A. F. M. Anwar and Kuo-Wei Liu,” The effects of compositional grading in the doped region on the sheet carrier concentration in the quantum well,” presented at the Tenth International Conference on Mathematical and Computer Modelling and Scientific Computing, July 1995, Boston.
  • M. Jahan, E. Reed and A. F. M. Anwar,”A novel HBT-based analog multiplier circuit for personal communication system,” presented at the Tenth International Conference on Mathematical and Computer Modelling and Scientific Computing, July 1995, Boston.
  • Kevin. R. Lefebvre and A. F. M. Anwar,” A self-consistent calculation of carrier escape rate in biased quantum wells,” presented at the Tenth International Conference on Mathematical and Computer Modelling and Scientific Computing, July 1995, Boston.
  • Kuo-Wei Liu, Chia-Jen Wu and A. F. M. Anwar,” An analytical model for super low noise InAlAs/InGaAs/InAlAs/InP HEMTs,” presented at the 1995 Low Dimensional Structures and Devices Conference-LDSD95, May 1995, Singapore.
  • Kuo-Wei Liu and A. F. M. Anwar,” A noise model for super low noise InAlAs/InGaAs/InAlAs/InP HEMTs,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 16, 1995.
  • Eric B. Reed, M. M. Jahan and A. F. M. Anwar,” A novel analog multiplier circuit for personal communication system,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 16, 1995.
  • Kevin. R. Lefebvre and A. F. M. Anwar,” Carrier escape rates from quantum wells,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 16, 1995.
  • M. Jahan, Kuo-Wei Liu and A. F. M. Anwar,” Bias dependence of high frequency noise in heterojunction bipolar transistors,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 16, 1995.
  • K. W. Liu, A. F. M. Anwar and M. M. Jahan, “D.C. small-signal parameters and noise for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 29, 1994.
  • Jahan and A. F. M. Anwar, “GaInSb/InAs far infra-red detectors” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 29th 1994.
  • A. F. M. Anwar and K.-W. Liu, “An analytical model for Inverted ODFETs”, 1993 International Semiconductor Device Research Symposium (ISDRS93) , University of Virginia, Charlottesville, VA, pp. 547-550, December 1-3, 1993.
  • K. W. Liu, A. F. M. Anwar and M. M. Jahan,”Noise analysis of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs,” 1993 International Semiconductor Device Research Symposium (ISDRS93), University of Virginia, Charlottesville, VA, pp. 199-202, December 1-3, 1993.
  • Mirza M. Jahan, A. F. M. Anwar and K. W. Liu,” Study of shot noise in asymmetric double barrier resonant tunneling structures,” 1993 International Semiconductor Device Research Symposium (ISDRS93) , University of Virginia, Charlottesville, VA, pp. 663-666, December 1-3, 1993.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan, “A charge control and current-voltage model for Inverted MODFETs,” Proc. of the 5th International Conference on Microelectronics, King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia, pp. 56-59, 1993.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan, “Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs, Proc. of the 5th International Conference on Microelectronics, King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia, pp. 128-131, 1993.
  • M. M. Jahan and A. F. M. Anwar,” Study of shot noise in a double barrier resonant tunneling structure, “Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp. 189-193, August 1993.
  • K. W. Liu, A. F. M. Anwar, M. M. Jahan and V. P. Kesan, “Noise in Si/Si1-xGex n-channel HEMTs and p-channel FETs”, presented at the SISDEP ’93 Conference, Vienna, September 1993. [will also be published in Springer-Verlag].
  • A. F. M. Anwar, M. A. Matin, K. W. Liu and M. M. Jahan,” Radiation pattern of a small monopole antenna in an anisotropic plasma,” presented at PIERS ’93, Caltech.
  • M. Jahan, A. F. M. Anwar and K. W. Liu,” Shot noise in quantum structures,” presented at the 9th International Conference on Mathematical and Computer Modelling, University of California, Berkeley, July 1993.
  • K. W. Liu, A. F. M. Anwar and M. M. Jahan,” A model for inverted MODFETs,” presented at the 9th International Conference on Mathematical and Computer Modelling, University of California, Berkeley, July 1993.
  • M. Jahan and A. F. M. Anwar,” Self-consistent calculation of shot noise in a double barrier resonant tunneling structure in the presence of transverse magnetic field,”AIP Conference Proceedings vol. 285, Noise in Physical Systems and 1/f Fluctuations, Ed. Peter H. Handel and Alma L. Chung, pp. 521-524, St. Louis, MO 1993
  • K. W. Liu, A. F. M. Anwar and Roger D. Carroll,” Noise modeling for W-band pseudomorphic InGaAs HEMTs,” AIP Conference Proceedings vol. 285, Noise in Physical Systems and 1/f Fluctuations, Ed. Peter H. Handel and Alma L. Chung, pp. 280-283, St. Louis, MO 1993.
  • A. F. M. Anwar, K. W. Liu, M. M. Jahan and Vijay P. Kesan,” DC small signal parameters and noise performance of Si/SiGe FETs,” AIP Conference Proceedings vol. 285, Noise in Physical Systems and 1/f Fluctuations, Ed. Peter H. Handel and Alma L. Chung, pp. 354-357, St. Louis, MO 1993.
  • Roger D. Carroll, A. F. M. Anwar and K. W. Liu,” A self-consistent calculation for SiGe/Si heterostructure devices,” presented at the APS March Meeting, Seattle, 1993.
  • A. F. M. Anwar, M. M. Jahan and K. W. Liu,” Self-consistent calculation of traversal time in an asymmetric double barrier resonant tunneling structure in the presence of transverse magnetic field,” presented at the APS March Meeting, Seattle, 1993.
  • M. Jahan and A. F. M. Anwar,” Carrier thermalization and ballistic effect in asymmetric double barrier resonant tunneling structure in the presence of a transverse magnetic field,” presented at the APS March Meeting, Seattle, 1993.
  • K. W. Liu and A. F. M. Anwar,” Noise modeling for W-band pseudomorphic InGaAs HEMTs,” presented at the APS March Meeting, Seattle, 1993.
  • A. F. M. Anwar and M. Farid,” A self-consistent study of localization using quantum mechanical tunneling time,” presented at the APS March Meeting, Seattle, 1993.
  • A. F. M. Anwar,” SiGe/Si FETs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC) , March 19th 1993
  • T Yang, A. F. M. Anwar and C. Roychoudhury,” Continuously tunable external cavity laser diode without super anti-reflection coating,” presented at the Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), March 1993.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan,” A self consistent model for SiGe/Si MODFETs,” EDMS’92 Conference, pp. 106-109, Nov. 92, Taipei, Taiwan.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan,” Study of localization using quantum mechanical tunneling time and modeling of shot noise,” SPIE Proceedings Quantum Well and Superlattice Physics IV, vol. 1675, pp. 376-386, 1992.
  • A. F. M. Anwar, K. W. Liu and M. M. Jahan,” Shot noise in 1 D disordered systems,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), pp. 18-22, 1992.
  • M. Jahan, A. F. M. Anwar and K. W. Liu,” Effect of transverse magnetic field on double barrier resonant tunneling device,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), pp. 264-266, 1992.
  • K. W. Liu, A. F. M. Anwar and M. M. Jahan,” Noise properties of AlGaAs/GaAs MODFETs,” Connecticut Symposium on Microelectronics and Optoelectronics (CMOC), pp. 71-75, 1992.
  • A. F. M. Anwar and R. D. Carrol,” Tailoring the two dimensional electron gas distribution by selective doping of the quantum well”, NASECODE VII Transactions (Copper Mtn., CO, 1990) COMPEL vol, 10, No. 4, pp. 269-275, 1991
  • M. Gokhale, R. D. Carrol, A. F. M. Anwar, F. C. Jain and M. Meyyappan,” Monte Carlo Simulation of Si/Ge MESFETs,” NASECODE VII Transactions (Copper Mtn., CO, 1990) COMPEL vol, 10, No. 4, pp. 547-552, 1991.
  • A. F. M. Anwar, “Self consistent modelling of SiGe/Si HEMTs,” 4th International Conference on Amorphous and Crystalline Silicon Carbide and other IV IV Materials (ICACSC ’91), Santa Clara, November 1991.
  • M. Gokhale, R. D. Carrol, A. F. M. Anwar and F. C. Jain, “Monte Carlo simulation of SiGe/Si HBTs”, ICACSC ’91, Santa Clara, November 1991.
  • A. F. M. Anwar, M. A. Matin and K. W. Liu, “Reflection mechanism and radiation pattern of a small mono pole antenna in a gyrotropic plasma,” AMSE Conference, Detroit, October 1991.
  • A. F. M. Anwar, Saeed Khan and M. A. Matin,” Mutual impedance between two short monopoles in a magnetoplasma with the static magnetic field in the broadside,” presented at the Progress in Electromagnetic Research Symposium (PIERS), Cambridge, Massachusetts, 1991.
  • Dichiaro, M. Cahay and A. F. M. Anwar,” Tunneling time through one dimensional disordered systems”, presented at the Microstructures and Microfabrication Conference, May 1991, Santa Fe.
  • A. F. M. Anwar, M. A. Matin and K.-W. Liu, “Radiation pattern of a small monopole antenna in a gyrotropic plasma,” Eighth International Conference on Mathematical and Computer Modeling, pp. 201, University of Maryland at Colloege Park, College Park, Maryland, April 1991.
  • A. F. M. Anwar and R. B. LaComb,” Behavior of tunneling time and current voltage characteristics under the influence of impurity scattering”, International Conference of Superlattice and Microstructures (ICSM) , Berlin, GDR, 1990.
  • M. Cahay, K. Dalton, G. S. Fisher, A. F. M. Anwar and R. B. LaComb,” Tunneling time through resonant tunneling devices and quantum mechanical bistability”, ICSM’90, Berlin, GDR.
  • R. Carrol and A. F. M. Anwar,” Self consistent model for Pseudomorphic MODFETs”, IEEE MILCOM’90 Conference, California, 1990.
  • LaComb, R. and A. F. M. Anwar,” I V characteristics and tunneling time of resonant tunneling diodes under the influence of random elastic scattering”, March APS Meeting, 1990.
  • A. F. M. Anwar and A. N. Khondker, ” An analytical model for the threshold voltage of poly Si MOSFET’s,” in Semiconductor on Insulator and Thin film transistor technology, Eds. A. Chiang, M. W. Geis and L. Pfeiffer, pp. 441 446, Materials Research Society, Pittsburgh, 1986.
  • A. F. M. Anwar, S. M. Rezaul Islam and S. Tasneem,” Programmable graphic generation using Motorola 6800 micro processor”, presented at the 28th annual convention of IEB (Institute of Engineers, Bangladesh), January 1984.

Books and Book Chapters

  • Test Yourself Electric Circuits, NTC Publishing Group, 1998.
  • Chapter on Control, Fuel Cell Technology – Reaching Towards Commercialization, Ed. Nigel Sammes, Springer 2006.
  • Chapter on Quantum Well Infra-Red Photodetectors: Theoretical Aspects, Encyclopedia of Nanoscience and Nanotechnology, Ed. H.S. Nalwa, vol. 9, pp. 199-224, American Scientific Publishers, 2004.
  • Chapter on Resonant Tunneling Devices, Encyclopedia of Nanoscience and Nanotechnology, Ed. H. S. Nalwa, vol. 9, pp. 357-370, American Scientific Publishers, 2004.

Edited Volumes:

  • Terahertz Physics, Devices, and Systems III: Advanced Application in Industry and Defense, Proceedings of SPIE, Volume 7311; ISBN: 9780819475770
  • Terahertz Physics, Devices, and Systems II (Proceedings Volume), Proceedings of SPIE Volume: 6772, September 2007; ISBN: 9780819469328
  • Terahertz Physics, Devices, and Systems (Proceedings Volume) Proceedings of SPIE Volume: 6373, October 2006; ISBN: 9780819464712

Professional Activities:

  • Editor, IEEE Transactions on Electron Devices (2001 – date)
  • Conference Chair: Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense, SPIE, Orlando, Florida, April 5-9, 2010.
  • Member, Engineering Advisory Council, Clarkson University, Potsdam, NY, 2005- 2009
  • Member Program Committee: SPIE Europe: Security and Defence, Berlin, Germany, August 31 – September 3. Session Chair: Active and Passive Imagers, Image Sensing and Processing, September 3, 2009
  • Conference Chair: Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, SPIE, Orlando, Florida, April 14-15, 2009.
  • Tutorial Chair: 51st IEEE International MWSCAS 2008, Tennessee, August 10-13, 2008.
  • Co-Chair: 6th International Fuel Cell Science, Engineering and Technology Conference (ASME), Denver, June 16-18, 2008
  • Conference Chair: Terahertz Physics, Devices and Systems, Optics East, Boston, September 2007
  • Conference Chair: Terahertz Physics, Devices and Systems, Optics East, Boston, October 1-4, 2006
  • Member, Program Committee, Nanostructure integration techniques for manufacturable devices, circuits, and systems: interfaces, interconnects, and nanosystems. Conference 6003, Optics East, Boston, October 23-25, 2005; Member, Program Committee, Nanosensing: materials and devices II, Conference 6008, Optics East, Boston, October 23-26, 2005.
  • Session Chair: Nano-Structures for Sensing: Exciting Developments and Future Research Directions, Optics East, Phidelphia, October 25-28, 2004.
  • Synthesis, Organization and Incorporation of Nano-Structures in Devices and Circuits I, Session A, Optics East, Boston, October 23, 2005
  • Synthesis, Organization and Incorporation of Nano-Structures in Devices and Circuits III, Session C, Optics East, Boston, October 23, 2005
  • Tutorial and Keynote: Joint Session with Conference 6003, Optics East, Boston, October 24, 2005
  • Nano-Photonic Structures, Quantum Structures, Organic and Inorganic Devices for Sensing and Imaging III, Optics East, Boston, October 26, 2005
  • Nano-Structures for Sensing: Exciting Developments and Future Research Directions,” Optics East, Philadelphia, October 25-28, 2004.
  • Member of the International Advisory Committee, International Conference on Electrical and Computer Engineering, Bangladesh, 2000 and 2002.
  • Member of the organizing committee of the 9th and 10th International Conference on Mathematical and Computer Modeling (ICMCM)
  • Chairperson of the session on Modeling of Quantum Effect Devices (ICMCM’93), Berkeley (1993) and Boston (1995).
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