Journal Articles:
Title Cited by Year
| Structural and optical properties of high magnesium content wurtzite-Zn1−xMgxO nanowires
A Rivera, A Mazady, JW Zeller, AK Sood, T Manzur, M Anwar
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 37 (2 …
|
2019 | |
| Exploiting memristors for compressive sampling of sensory signals
F Qian, Y Gong, G Huang, M Anwar, L Wang
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 1-12
|
2 | 2018 |
| High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films
L Adnane, F Dirisaglik, A Cywar, K Cil, Y Zhu, C Lam, AFM Anwar, …
Journal of Applied Physics 122 (12), 125104
|
5 | 2017 |
| A survey on GaN-based devices for terahertz photonics K Ahi, M Anwar Wide Bandgap Power Devices and Applications 9957, 99570A |
4 | 2016 |
| Modeling of terahertz images based on x-ray images: a novel approach for verification of terahertz images and identification of objects with fine details beyond terahertz …
K Ahi, M Anwar
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …
|
29 | 2016 |
| Developing terahertz imaging equation and enhancement of the resolution of terahertz images using deconvolution
K Ahi, M Anwar
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …
|
35 | 2016 |
| Advanced terahertz techniques for quality control and counterfeit detection
K Ahi, M Anwar
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …
|
34 | 2016 |
| Terahertz Techniques: Novel Non-destructive Tests for Detection of Counterfeit Electronic Components
K Ahi, M Anwar
Connect. Symp. Microelectron. Optoelectron
|
5 | 2016 |
| A novel mathematical approach for converting X-Ray images to terahertz images
K Ahi, M Anwar
Connect. Symp. Microelectron. Optoelectron.
|
3 | 2016 |
| Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense
MF Anwar, TW Crowe, T Manzur
Proc. of SPIE Vol 9856, 985601-1
|
2016 | |
| Transient circuit model of memristors
A Mazady, M Anwar
International Journal of High Speed Electronics and Systems 24 (03n04), 1520007
|
1 | 2015 |
| Energy Harvesting Leveraging Piezoelectric Property of ZnO Nanorods
A Rivera, A Mazady, M Anwar
International Journal of High Speed Electronics and Systems 24 (03n04), 1520013
|
1 | 2015 |
| DC Circuit Model of TiO2-based Memristors
A Mazady, M Anwar
International Journal of High Speed Electronics and Systems 24 (03n04), 1550004
|
2015 | |
| Optimized Growth of ZnO Nanowires and Nanorods Using MOCVD
A Rivera, A Mazady, M Anwar
International Journal of High Speed Electronics and Systems 24 (03n04), 1520014
|
2015 | |
| ZnMgO/ZnO Core-Shell Structures for Gas Sensing
A Rivera, A Mazady, M Anwar
International Journal of High Speed Electronics and Systems 24 (03n04), 1550010
|
2015 | |
| Memristor puf—a security primitive: Theory and experiment
A Mazady, MT Rahman, D Forte, M Anwar
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …
|
38 | 2015 |
| Terahertz characterization of electronic components and comparison of terahertz imaging with x-ray imaging techniques
K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar
Terahertz Physics, Devices, and Systems IX: Advanced Applications in …
|
35 | 2015 |
| Growth dependent optical properties of ZnMgO at THz frequencies
A Rivera, A Mazady, K Ahi, M Anwar
Terahertz Physics, Devices, and Systems IX: Advanced Applications in …
|
5 | 2015 |
| Co-axial core–shell ZnMgO/ZnO NWs
A Rivera, A Mazady, M Anwar
Solid-State Electronics 104, 126-130
|
7 | 2015 |
| Authentication of electronic components by time domain THz Techniques
K Ahi, N Asadizanjani, M Tehranipoor, AFM Anwar
Connect. Symp. Microelectron. Optoelectron., Bridgeport, Connecticut, USA
|
8 | 2015 |
| THZ Techniques: A Promising Platform for Authentication of Electronic Components
K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar
CHASE Conf. Trust. Syst. Supply Chain Assur., Storrs, Connecticut, USA
|
8 | 2015 |
| Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense
MF Anwar, TW Crowe, T Manzur
Proc. of SPIE Vol 9483, 948301-1
|
2015 | |
| A novel approach for enhancement of the resolution of terahertz measurements for quality control and counterfeit detection
K Ahi, M Anwar
Diminishing Manufacturing Sources and Material Shortages (DMSMS)
|
10 | 2015 |
| Optical parameters of Zn1− xMgxO nanowires in THz regime
A Mazady, A Rivera, M Anwar
Solid-State Electronics 101, 8-12
|
3 | 2014 |
| Memristor: Part I—The underlying physics and conduction mechanism
A Mazady, M Anwar
IEEE Transactions on Electron Devices 61 (4), 1054-1061
|
17 | 2014 |
| Memristor: part II–DC, transient, and RF analysis
A Mazady, M Anwar
IEEE Transactions on Electron Devices 61 (4), 1062-1070
|
13 | 2014 |
| Special Section Guest Editorial: Terahertz Physics and Applications
MF Anwar, JS Melinger, E Ozbay, M Tonouchi
Optical Engineering 53 (3), 031201
|
1 | 2014 |
| Effects of Annealing on Structural and Optical Properties of ZnO Nanowires
A Mazady, A Rivera, M Anwar
MRS Online Proceedings Library Archive 1675, 21-25
|
2014 | |
| Low Temperature Growth of Horizontal ZnO Nanorods
A Rivera, A Mazady, M Anwar
MRS Online Proceedings Library Archive 1707
|
1 | 2014 |
| Optimization of Annealing Conditions for ZnO-based Thin Films Grown Using MOCVD
A Mazady, A Rivera, M Anwar
MRS Online Proceedings Library Archive 1675, 3-8
|
1 | 2014 |
| Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense
M Anwar, TW Crowe, T Manzur
Proc. of SPIE Vol 9102, 910201-1
|
2014 | |
| ZnMgO solar blind detectors: from material to systems
MF Anwar, A Rivera, A Mazady, HC Chou, JW Zeller, AK Sood
Infrared Sensors, Devices, and Applications III 8868, 88680B
|
6 | 2013 |
| ZnO nanowire growth and characterization for UV detection and imaging applications
A Rivera, MA Mazady, J Zeller, M Anwar, T Manzur, A Sood
Sensors, and Command, Control, Communications, and Intelligence (C3I …
|
2013 | |
| Room-Temperature Quantum Cascade Laser: ZnO/Zn1− xMgxO Versus GaN/AlxGa1− xN
HC Chou, A Mazady, J Zeller, T Manzur, M Anwar
Journal of electronic materials 42 (5), 882-888
|
3 | 2013 |
| A comparison of ZnO nanowires and nanorods grown using MOCVD and hydrothermal processes
A Rivera, J Zeller, A Sood, M Anwar
Journal of electronic materials 42 (5), 894-900
|
19 | 2013 |
| MOCVD growth of ZnO nanowire arrays for advanced UV detectors
A Rivera, A Mazady, J Zeller, M Anwar, T Manzur, A Sood
Oxide-based Materials and Devices IV 8626, 86260B
|
1 | 2013 |
| Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense
MF Anwar, TW Crowe, T Manzur
Proc. of SPIE Vol 8716, 871601-1
|
2013 | |
| MOCVD growth and characterization of ZnO nanowire arrays for advanced ultraviolet detectors
A Rivera, J Zeller, T Manzur, A Sood, M Anwar
Unmanned/Unattended Sensors and Sensor Networks IX 8540, 854008
|
2012 | |
| MOCVD growth and characterization of ZnO nanowire arrays for UV detectors
A Rivera, J Zeller, T Manzur, A Sood, M Anwar
Proceedings of SPIE 8540
|
7 | 2012 |
| ZnO/Zn1−xMgxO QCL: A high power room temperature THz source
HC Chou, J Zeller, T Manzur, M Anwar
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4
|
2012 | |
| Energy scavenging using ZnO nanorods grown on flexible substrates
A Rivera, A Edington, J Zeller, M Anwar
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4
|
1 | 2012 |
| Transient analysis of memristors
A Mazady, M Anwar
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4
|
2 | 2012 |
| Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense
AFM Anwar, NK Dhar, TW Crowe
Proc. of SPIE Vol 8363, 836301-1
|
2012 | |
| Nitride THz GaN quantum cascade lasers
HC Chou, M Anwar, T Manzur, J Zeller, AK Sood
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2
|
2011 | |
| DC circuit model of a memristor
A Mazady, M Anwar
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2
|
2 | 2011 |
| Growth and characterization of nanowires and nanorods on Al2O3(110), Si(111) and SiO2/p-Si(100) by MOCVD
A Rivera, M Anwar, MR Monville, S Chang, J Zeller, AK Sood, T Manzur
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2
|
1 | 2011 |
| AN ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF POLYSILICON MOSFET’s AFM ANWAR AND AN KHONDKER
AFM ANWAR
Materials Issues in Amorphous-Semiconductor Technology 53, 441
|
2011 | |
| EO/IR sensor development using nanostructures for unattended ground sensor applications
AK Sood, JW Zeller, YR Puri, T Manzur, NK Dhar, A Rivera, AFM Anwar, …
Unmanned/Unattended Sensors and Sensor Networks VIII 8184, 818408
|
1 | 2011 |
| STRAIN INDUCED ACTIVE LAYER DESIGN OF GaN-THz QUANTUM CASCADE LASERS
T MANZUR, M ANWAR
International Journal of High Speed Electronics and Systems 20 (03), 621-627
|
2011 | |
| An overview of solid state THz generation and issues related to GaN
M Anwar, A Chou, A Rivera, T Manzur
Photonics Society Summer Topical Meeting Series, 2011 IEEE, 97-99
|
2011 | |
| Active layer design of THz GaN quantum cascade lasers
HC Chou, T Manzur, M Anwar
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry …
|
5 | 2011 |
| Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
M Anwar, NK Dhar, TW Crowe
SPIE
|
2011 | |
| Growth and characterization of ZnO nanostructures for UV sensor applications
AK Sood, EJ Egerton, YR Puri, J Zeller, T Manzur, DL Polla, NK Dhar, …
Oxide-based Materials and Devices II 7940, 79400Z
|
2011 | |
| ZnO Nanostructures for Optoelectronic Applications
AK Sood, ZL Wang, DL Polla, NK Dhar, T Manzur, AFM Anwar
Optoelectronic Devices and Properties
|
8 | 2011 |
| Insulated gate silicon nanowire transistor and method of manufacture
AF Anwar, RT Webster
US Patent 7,700,419
|
42 | 2010 |
| Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry …
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …
Journal of Power Sources 195 (4), 984-993
|
40 | 2010 |
| Study of temperature, air dew point temperature and reactant flow effects on PEMFC performances using electrochemical spectroscopy and voltammetry techniques
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …
Journal of Power Sources 195 (4), pp. 984-993
|
2 | 2010 |
| Electromagnetic Component Research
RT Webster, JR Reid, EE Crisman, AF Anwar
AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIRECTORATE/ELECTROMAGNETICS …
|
2009 | |
| GaN-based THz advanced quantum cascade lasers for manned and unmanned systems
AFM Anwar, T Manzur, KR Lefebvre, EM Carapezza
Unmanned/Unattended Sensors and Sensor Networks VI 7480, 748012
|
2009 | |
| Insulated gate silicon nanowire transistor and method of manufacture
AF Anwar, RT Webster
US Patent 7,485,908
|
10 | 2009 |
| An experimental study of the temperature, relative humidity and flow rate effects on the performances of a single PEMFC
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …
FDFC, 1-12
|
2008 | |
| Terahertz Physics, Devices, and Systems II
M Anwar, AJ DeMaria, MS Shur
Terahertz Physics, Devices, and Systems II 6772
|
2007 | |
| Terahertz physics, devices, and systems
M Anwar, AJ DeMaria, MS Shur
Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series 6373
|
3 | 2006 |
| Schottky barrier height in GaN/AlGaN heterostructures
AFM Anwar, EW Faraclas
Solid-State Electronics 50 (6), 1041-1045
|
23 | 2006 |
| AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics
EW Faraclas, AFM Anwar
Solid-state electronics 50 (6), 1051-1056
|
46 | 2006 |
| Bias induced strain in heterojunction field effect transistors and its implications
AFM Anwar, RT Webster, KV Smith
Applied physics letters 88 (20), 203510
|
62 | 2006 |
| Power Conditioning and Control of Fuel Cell Systems
EW Faraclas, SS Islam, AFM Anwar
Fuel Cell Technology, 253-275
|
2006 | |
| Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’”[Appl. Phys. Lett. 86, 016101 (2005)]
AFM Anwar, SS Islam, RT Webster
Applied Physics Letters 86 (1), 016101
|
2005 | |
| Spice model of AlGaN/GaN hemts and simulation of VCO and power amplifier
SS Islam, AFM Anwar
High Performance Devices, 229-235
|
10 | 2005 |
| Localization and shot noise in nanostructures
AFM Anwar
Nanosensing: Materials and Devices 5593, 408-416
|
2004 | |
| Noise Characterization for Heterojunction Bipolar Transistors (HBTs)
KW Liu, AFM Anwar
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on …
|
2004 | |
| Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs
RT Webster, AFM Anwar
Solid-State Electronics 48 (10-11), 2007-2011
|
2 | 2004 |
| Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation
E Faraclas, RT Webster, G Brandes, AFM Anwar
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference …
|
6 | 2004 |
| REPORT DOCUMENTATlON PAGE omé’Wffi’imtaa
SS Islam, AFM Anwar, RTW gATASK NUMBER
IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (6)
|
2004 | |
| A physics-based frequency dispersion model of GaN MESFETs
SS Islam, AFM Anwar, RT Webster
IEEE Transactions on electron devices 51 (6), 846-853
|
25 | 2004 |
| Self-heating and trapping effects on the RF performance of GaN MESFETs
SS Islam, AFM Anwar
IEEE transactions on microwave theory and techniques 52 (4), 1229-1236
|
31 | 2004 |
| Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors
AFM Anwar, SS Islam, RT Webster
Applied physics letters 84 (11), 1970-1972
|
24 | 2004 |
| Quantum Well Infrared Photodetectors: Theoretical Aspects
AFM Anwar, KR Lefebvre
Encyclopedia of Nanoscience and Nanotechnology 9 (224), 199-224
|
2004 | |
| Resonant tunneling devices
AFM Anwar, MM Jahan
Encyclopedia of Nanoscience and Nanotechnology 9 (370), 357-370
|
1 | 2004 |
| Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETs
SS Islam, MN Rahman, AFM Anwar
Semiconductor Device Research Symposium, 2003 International, 441-442
|
1 | 2003 |
| BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOS
SS Islam, AFM Anwar
Semiconductor Device Research Symposium, 2003 International, 168-169
|
2003 | |
| A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs
SS Islam, AFM Anwar, RT Webster
Device Research Conference, 2003, 69-70
|
3 | 2003 |
| Analysis of RF performances of GaN MESFETs including self-heating and trapping effects
SS Islam, AFM Anwar
Microwave Symposium Digest, 2003 IEEE MTT-S International 1, 459-462
|
1 | 2003 |
| A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs
KW Liu, AFM Anwar
Solid-State Electronics 47 (5), 763-768
|
1 | 2003 |
| Bias dependence of high-frequency noise in heterojunction bipolar transistors
MM Jahan, KW Liu, AFM Anwar
IEEE transactions on microwave theory and techniques 51 (3), 677-683
|
1 | 2003 |
| Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers
A Ahmed, SS Islam, AFM Anwar
Solid-State Electronics 47 (2), 339-344
|
12 | 2003 |
| Effects of impurity traps on gate current and trapped charge in MOSFETs
SS Islam, MR Khan, AFM Anwar
Solid-State Electronics 47 (2), 333-337
|
3 | 2003 |
| A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors
AFM Anwar, MM Jahan
IEEE Transactions on Electron Devices 50 (2), 272-277
|
2003 | |
| Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects
SS Islam, AFM Anwar
IEEE transactions on microwave theory and techniques 50 (11), 2474-2479
|
16 | 2002 |
| Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis
AFM Anwar, SS Islam
Solid-State Electronics 46 (10), 1507-1511
|
1 | 2002 |
| High frequency GaN/AlGaN HEMT class-E power amplifier
SS Islam, AFM Anwar
Solid-State Electronics 46 (10), 1621-1625
|
3 | 2002 |
| AlGaAsSb/InGaAs/AlGaAsSb metamorphic HEMTs
RT Webster, AFM Anwar, JL Heaton, K Nichols, S Duncan
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …
|
1 | 2002 |
| Thermal and trapping effects in GaN-based MESFETs
SS Islam, AFM Anwar
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …
|
2 | 2002 |
| Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects
SS Islam, AFM Anwar
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …
|
4 | 2002 |
| Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series
SS Islam, AFM Anwar
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354
|
4 | 2002 |
| Temperature-dependent nonlinearities in GaN/AlGaN HEMTs
SS Islam, AFM Anwar
IEEE Transactions on Electron Devices 49 (5), 710-717
|
18 | 2002 |
| Large-signal modeling of GaN-based microwave power transistors
SS Islam
|
4 | 2002 |
| Temperature dependent transport parameters in short GaN structures
AFM Anwar, S Wu, RT Webster
physica status solidi (b) 228 (2), 575-578
|
10 | 2001 |
| A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series
A Ahmed, SS Islam, AFM Anwar
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524
|
31 | 2001 |
| Temperature dependence of intermodulation and linearity in GaN based devices
A Ahmed, SS Islam, AFM Anwar
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers …
|
3 | 2001 |
| Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors
AFM Anwar, S Wu, RT Webster
IEEE Transactions on Electron devices 48 (3), 567-572
|
103 | 2001 |
| RF performance of GaN/AlGaN HEMT amplifier
AFM Anwar, SS Islam
Semiconductor Device Research Symposium, 2001 International, 209-212
|
4 | 2001 |
| Gain compression in GaN HEMT amplifiers
A Ahmed, SS Islam, AFM Anwar
Semiconductor Device Research Symposium, 2001 International, 205-208
|
2 | 2001 |
| An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors
KW Liu, AFM Anwar
Microelectronics journal 32 (1), 85-88
|
1 | 2001 |
| GaN/AlGaN HEMT microwave class-e power amplifier
SS Islam, AFM Anwar
Semiconductor Device Research Symposium, 2001 International, 446-449
|
7 | 2001 |
| Impact ionization in InAlAs/InGaAs/InAlAs HEMT’s
RT Webster, S Wu, AFM Anwar
IEEE Electron Device Letters 21 (5), 193-195
|
72 | 2000 |
| Base transit time in abrupt GaN/InGaN/GaN HBT’s
SY Chiu, AFM Anwar, S Wu
IEEE Transactions on Electron Devices 47 (4), 662-666
|
7 | 2000 |
| Monte Carlo simulation in submicron GaAs n+ nn+ diodes
S Wu, AFM Anwar
SPIE proceedings series, 550-553
|
1 | 2000 |
| A theoretical determination of impact ionization induced gate current in InP HEMTs
S Wu, AFM Anwar
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on …
|
1 | 2000 |
| High-frequency microwave characteristics of HBTs
SY Chiu, AFM Anwar
SPIE proceedings series, 546-549
|
2000 | |
| Process Development on 0.12-um Gate E/D GaAs MESFETs with f and f,> 100GHz Using Direct Ion Implantation for Low Power IC Applications
Z Tang, H Hsia, D Becher, D Caruth, M Feng
|
2000 | |
| The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors
KW Liu, AFM Anwar
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1 …
|
2000 | |
| SUB-MICRON DEVICES
S Wu, AFM Anwar
Proceedings, 2000 IEEE/Cornell Conference on High Performance Devices …
|
2000 | |
| A THEORETICAL DETERIVHNATION OF] 1V [PACT IONIZATION INDUCED
GCINIP HEMT, S Wu, AFM Anwar
Proceedings, 2000 IEEE/Cornell Conference on High Performance Devices …
|
2000 | |
| A modified drift-diffusion model for sub-micron devices
S Wu, AFM Anwar
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on …
|
2000 | |
| Effect of surface recombination on the Early voltage in HBTs
SY Chiu, AFM Anwar
Semiconductor science and technology 14 (9), 840
|
1 | 1999 |
| Electron-phonon interaction within an unbiased and biased quantum well
KR Lefebvre, AFM Anwar
IEEE journal of quantum electronics 35 (2), 216-220
|
3 | 1999 |
| Physics-based intrinsic model for AlGaN/GaN HEMTs
S Wu, RT Webster, AFM Anwar
Materials Research Society Internet Journal of Nitride Semiconductor …
|
21 | 1999 |
| Nonlinearity Analysis of HBTs
SY Chiu, AFM Anwar
Proceedings, 97
|
1999 | |
| Base transit time in abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
SY Chiu, AFM Anwar, S Wu
Materials Research Society Internet Journal of Nitride Semiconductor …
|
6 | 1999 |
| Energy bandgap of AlxGa1− xAs1− ySby and conduction band discontinuity of AlxGa1− xAs1− ySby/InAs and AlxGa1− xAs1− ySby/InGaAs heterostructures
AFM Anwar, RT Webster
Solid-State Electronics 42 (11), 2101-2104
|
17 | 1998 |
| Broadening in the absorption line through a redistribution of the density of states
KR Lefebvre, AFM Anwar
Physics and Simulation of Optoelectronic Devices VI 3283, 952-960
|
1998 | |
| On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW’s
AFM Anwar, RT Webster
IEEE Transactions on Electron Devices 45 (6), 1170-1175
|
2 | 1998 |
| Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well
AFM Anwar, KR Lefebvre
Photodetectors: Materials and Devices III 3287, 179-187
|
1998 | |
| Electron escape via polar optical-phonon interaction and tunneling from biased quantum wells
AFM Anwar, KR Lefebvre
Physical Review B 57 (8), 4584
|
10 | 1998 |
| Comparison of the Dark Current from an AlGaAs/GaAs and AlGaN/GaN Quantum Well [3287-22]
AFM Anwar, KR Lefebvre
PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 179-187
|
1998 | |
| Redistribution of the quantum well density of states under the influence of an electric field
KR Lefebvre, AFM Anwar
Semiconductor science and technology 12 (10), 1226
|
12 | 1997 |
| Electron escape dynamics from a biased quantum well
KR Lefebvre, AFM Anwar
Physics and Simulation of Optoelectronic Devices V 2994, 442-452
|
1997 | |
| Electron escape time from single quantum wells
KR Lefebvre, AFM Anwar
IEEE journal of quantum electronics 33 (2), 187-191
|
33 | 1997 |
| Impact Ionization in InP-based HEMTs
RT Webster, AFM Anwar, S Wu
Proceedings, 172
|
1997 | |
| Effect of Surface Recombination on HBT Performance
SY Chhi, AFM Anwar
Proceedings: 1997 International Semiconductor Device Research Symposium …
|
1997 | |
| New method of computing band offsets and its application to AlGaN/GaN heterostructures
RT Webster, AFM Anwar
MRS Online Proceedings Library Archive 482
|
2 | 1997 |
| Dark Current in AlGaAsSb/InGaAs/AlGaAsSb QWIPs
KR Lefebvre, AFM Anwar
Proceedings: 1997 International Semiconductor Device Research Symposium …
|
1997 | |
| An envelope function description of the quantum well formed in AlxGa1−xAsySb1−y/InAs/AlxGa1−xAsySb1−y heterostructures
AFM Anwar, RT Webster
Journal of applied physics 80 (12), 6827-6830
|
5 | 1996 |
| Electron and hole escape times in single quantum wells
KR Lefebvre, AFM Anwar
Journal of applied physics 80 (6), 3595-3597
|
14 | 1996 |
| An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors
MM Jahan, AFM Anwar
Solid-State Electronics 39 (6), 941-948
|
9 | 1996 |
| An analytical noise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs
KW Liu, AFM Anwar, CJ Wu
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370
|
1 | 1996 |
| An analytical expression for base transit time in an exponentially doped base bipolar transistor
MM Jahan, AFM Anwar
Solid-State Electronics 39 (1), 133-136
|
16 | 1996 |
| An analytical characterization for IMODFETs
KW Liu, AFM Anwar
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 371-375
|
1996 | |
| Noise performance of Si/Si/sub 1-x/Ge/sub x/n-channel HEMTs and p-channel FETs
KW Liu, AFM Anwar
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240
|
1996 | |
| Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors
MM Jahan, AFM Anwar
IEEE Electron Device Letters 16 (12), 551-553
|
7 | 1995 |
| Early voltage in double heterojunction bipolar transistors
MM Jahan, AFM Anwar
IEEE Transactions on Electron Devices 42 (11), 2028-2029
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6 | 1995 |
| Noise performance of Si/Si/sub 1-x/Ge/sub x/FETs
AFM Anwar, KW Liu, VP Kesan
IEEE Transactions on Electron Devices 42 (10), 1841-1846
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16 | 1995 |
| Noise resistance of heterojunction bipolar transistors
AFM Anwar, MK Jahan
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE …
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1995 | |
| Far infrared Ga/sub 1-x/In/sub x/Sb/InAs-based strained-layer superlattice detectors grown by OMVPE
MM Jahan, AFM Anwar
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE …
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1995 | |
| A charge control and current-voltage model for inverted MODFET’s
AFM Anwar, KW Liu, AN Khondker
IEEE Transactions on Electron Devices 42 (4), 586-590
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12 | 1995 |
| Shot noise in double barrier quantum structures
MM Jahan, AFM Anwar
Solid-state electronics 38 (2), 429-432
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17 | 1995 |
| Traversal time in an asymmetric double-barrier quantum-well structure
AFM Anwar, MM Jahan
IEEE journal of quantum electronics 31 (1), 3-7
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6 | 1995 |
| A noise model for high electron mobility transistors
AFM Anwar, KW Liu
IEEE Transactions on Electron Devices 41 (11), 2087-2092
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20 | 1994 |
| Density of states for double-barrier quantum-well structures under the influence of external fields and phase-breaking scattering
AFM Anwar, MM Jahan
Physical Review B 50 (15), 10864
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18 | 1994 |
| Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
AFM Anwar, KW Liu
Solid-state electronics 37 (9), 1585-1588
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8 | 1994 |
| An analytical model of current-voltage characteristics and dc small-signal parameters for Si/Si1− xGex FETs
KW Liu, AFM Anwar, VP Kesan
Solid-state electronics 37 (8), 1570-1572
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6 | 1994 |
| Self-consistent calculation of traversal time in a double-barrier resonant-tunneling structure in the presence of a transverse magnetic field
AFM Anwar, MM Jahan
Physical Review B 49 (24), 17440
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20 | 1994 |
| A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
KW Liu, AFM Anwar
Solid-state electronics 37 (1), 51-54
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14 | 1994 |
| The role of phase‐breaking processes in indirect‐band tunneling barrier structures
RA Morrisey, AN Khondker
Journal of applied physics 74 (4), 2557-2561
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1993 | |
| DC, small‐signal parameters and noise performance for SiGe/Si FETs
AFM Anwar, KW Liu, MM Jahan, VP Kesan
AIP Conference Proceedings 285 (1), 354-357
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1993 | |
| Self‐consistent calculation of shot noise in a double‐barrier resonant tunneling structure in the presence of magnetic field
MM Jahan, AFM Anwar
AIP Conference Proceedings 285 (1), 521-524
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1993 | |
| Noise modeling for W‐band pseudomorphic InGaAs HEMT’s
KW Liu, AFM Anwar, RD Caroll
AIP Conference Proceedings 285 (1), 280-283
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1993 | |
| Study of shot noise in a double barrier resonant tunneling structure
MM Jahan, AFM Anwar
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE …
|
1993 | |
| An envelope function description of the quantum well formed in strained layer SiGe/Si modulation doped field effect transistors
AFM Anwar, KW Liu, RD Carroll
Journal of applied physics 74 (3), 2064-2066
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3 | 1993 |
| Noise properties of AlGaAs/GaAs MODFET’s
AFM Anwar, KW Liu
IEEE Transactions on Electron Devices 40 (6), 1174-1176
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10 | 1993 |
| Self-consistent study of the effect of a transverse magnetic field on the performance of the double barrier resonant tunneling structure
MM Jahan
University of Connecticut
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1 | 1993 |
| Noise Analysis of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs
KW Liu, AFM Anwar, MM Jahan
ISDRS 1, 199
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1993 | |
| Noise in Si / Si 1- x Ge x n-channel HEMTs and p-channel FETs
AFM Anwar, KW Liu, MM Jahan
Simulation of Semiconductor Devices and Processes, 273-276
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1993 | |
| Study of localization using quantum-mechanical tunneling time and modeling of shot noise
AFM Anwar, KW Liu, MM Jahan
Quantum Well and Superlattice Physics IV 1675, 376-388
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1 | 1992 |
| Tunneling time through resonant tunneling devices and quantum-mechanical bistability
M Cahay, KT Dalton, GS Fisher, AFM Anwar
Superlattices and microstructures 11 (1), 113-117
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7 | 1992 |
| Influence of impurity scattering on the traversal time and current-voltage characteristics of resonant tunneling structures
AFM Anwar, RB LaComb, M Cahay
Superlattices and microstructures 11 (1), 131-135
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4 | 1992 |
| Monte Carlo simulation of SiGe/Si MESFETs
M Gokhale, AFM Anwar, RD Carrol, FC Jain
COMPEL-The international journal for computation and mathematics in …
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1 | 1991 |
| TAILORING THE TWO DIMENSIONAL ELECTRON GAS DISTRIBUTION BY SELECTIVE DOPING OF THE QUANTUM WELL
AFM Anwar, RD Carrol
COMPEL-The international journal for computation and mathematics in …
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1991 | |
| Approximate analytic current-voltage calculations for MODFETs
AN Khondker, AFM Anwar
IEEE Transactions on Electron Devices 37 (1), 314-317
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9 | 1990 |
| Calculation of the traversal time in resonant tunneling devices
AFM Anwar, AN Khondker, MR Khan
Journal of applied physics 65 (7), 2761-2765
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118 | 1989 |
| On modelling of quantum well devices.
AFM Anwar
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1 | 1989 |
| Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept
AN Khondker, MR Khan, AFM Anwar
Journal of applied physics 63 (10), 5191-5193
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179 | 1988 |
| Envelope function description of double‐heterojunction quantum wells
AFM Anwar, AN Khondker
Journal of applied physics 62 (10), 4200-4203
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5 | 1987 |
| Analytical models for AlGaAs/GaAs heterojunction quantum wells
AN Khondker, AFM Anwar
Solid-state electronics 30 (8), 847-852
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23 | 1987 |
| A model for polysilicon MOSFET’s
AFM Anwar, AN Khondker
IEEE Transactions on Electron Devices 34 (6), 1323-1330
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19 | 1987 |
| Charge control mechanism in MODFET’s: a theoretical analysis
AN Khondker, AFM Anwar, MA Islam, L Limoncelli, D Wilson
IEEE transactions on electron devices 33 (11), 1825-1826
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14 | 1986 |
| An analytical model for the threshold voltage of polysilicon MOSFET’s
AFM Anwar, AN Khondker
MRS Online Proceedings Library Archive 53
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