ECE WEB

Education:
Ph.D.E.E., Rensselaer Polytechnic Institute, 1990.
M.S.E.E., Rensselaer Polytechnic Institute, 1987.
B.S.E.E., University of Maine, 1984.

Experience:
1996-present Associate Professor, University of Connecticut
1999-2006 Associate Department Head, Electrical and Computer Engineering Dept., University of Connecticut
1990-1996 Assistant Professor, University of Connecticut
1987-1988 Research Associate, Philips Laboratories, Briarcliff Manor, NY
1984 Test Engineer, National Semiconductor, South Portland, ME
1982-1983 Technician, Fairchild Semiconductor, South Portland, ME

Professional Societies and Memberships:
Senior Member, Institute of Electrical and Electronics Engineers (I.E.E.E.)
I.E.E.E. Electron Device Society
American Physical Society
Materials Research Society
Phi Kappa Phi
Tau Beta Pi
Eta Kappa Nu.

Research Interests:
Heteroepitaxial growth of semiconductors; characterization and defect engineering. VLSI fabrication and digital integrated circuits. Semiconductor material growth and characterization; SiC, II-VI, and III-V semiconductors; metalorganic vapor phase epitaxy; mismatched heteroepitaxy; doping; x-ray diffraction; photoluminescence. Semiconductor devices, including light-emitting diodes; laser diodes, and high-speed transistors. Novel ferroelectric materials for VLSI applications.

Honors:
Electrical and Computer Engineering Best Teacher Award, 2004-2005.
Electrical and Computer Engineering Best Teacher Award, 2003-2004.
School of Engineering Outstanding Teaching Award, University of Connecticut, 2000-2001
University of Connecticut Teaching Fellow, 1999-2000
IBM Fellow, 1988-1990.
American Electronics Association - Analog Devices Fellow, 1984-1988.

John E. Ayers, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization (CRC Press, Boca Raton, FL, 2007).

John E. Ayers, Digital Integrated Circuits: Analysis and Design, CRC Press, Boca Raton, FL, 2003.

Contributing author to: Electrical Engineering Handbook, edited by Richard C. Dorf, CRC Press, Boca Raton, FL, 2005.

Scientific Papers:

B. Yarlagadda, A. Rodriguez, P. Li, R. Velampati, J. F. Ocampo, E. N. Suarez, P. B. Rago, D. Shah, J. E. Ayers, and F. C. Jain, “X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors,” submitted to Appl. Phys. Lett. (2008).

B. Yarlagadda, A. Rodriguez, P. Li, R. Velampati, J. E. Ayers, and F. C. Jain, “A quantitative Model for the Interpretation of RAV (Rocking Curve Azimuthal Variation) Results from Heteroepitaxial Semiconductor Layers,” submitted to J. Cryst. Growth.

J. F. Ocampo, E. Suarez, F. C. Jain, and J. E. Ayers, “Overshoot Graded Layers for Mismatched Heteroepitaxy,” submitted to J. Electron. Mat.

J. E. Ayers, “Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions,” submitted to J. Electron. Mat. (2008).

J. E. Ayers, “Critical layer thickness in compositionally-graded semiconductor layers with non-zero interfacial mismatch,” Semicond. Sci. Technol., 23, 045018 (2008).

J. E. Ayers, “Multiple Critical Layer Thicknesses in Retro-Graded Heterostructures,” Appl. Phys. Lett., 92, 102104 (2008).

B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, and J. E. Ayers, “Elastic Strains in Heteroepitaxial ZnSe1-xTex on InGaAs/InP (001),” J. Electron. Mat., 35, 1327-1332 (2006).

P. Li, A. Rodriguez, B. Yarlagadda, R. Velampati, J. E. Ayers, and F. C. Jain, “Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices,” Solid State Electron., 49, 2002-2005 (2005).

D. W. Parent, A. Rodriguez, J. E. Ayers, and F. C. Jain, “Photoassisted MOVPE grown (n)ZnSe/(p+)GaAs heterojunction solar cells,” Solid-State Electron., Vol. 47, pp. 595-599 (2003).

X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, “A Novel Approach for the Complete Removal of Threading Dislocations from ZnSe on GaAs (001),” J. Electronic Materials, 30, 667 (2001).

D. W. Parent, A. Rodriguez, and F. C. Jain, “The Photoassisted MOVPE Growth of ZnMgSSe,” J. Cryst. Growth, in press (2001).

D. W. Parent, A. Rodriguez, P. Li, X. G. Zhang, G. Zhao, J. E. Ayers, and F. C. Jain, "The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan," J. Electron. Mat., 29, 713 (2000).

X. G. Zhang, A. Rodriguez, X. Wang, P. Li, F. C. Jain, and J. E. Ayers, “Complete Removal of Threading Dislocations from Mismatched Layers by Patterned Heteroepitaxial Processing,” Appl. Phys. Lett., 77, 2524-2526 (2000).

X. G. Zhang, D. W. Parent, P. Li, A. Rodriguez, G. Zhao, J. E. Ayers, and F. C. Jain, "X-Ray Rocking Curve Analysis of Tetragonally Distorted Ternary Semiconductors on Mismatched (001) Substrates," J. Vac. Sci. Technol. B, 18, 1375 (2000).

X. G. Zhang, P. Li, D. W. Parent, G. Zhao, J. E. Ayers, and F. C. Jain, “Comparison of x-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication,” J. Electron. Mat., 28, 553 (1999).

X. G. Zhang, P. Li, G. Zhao, D. W. Parent, F. C. Jain, and J. E. Ayers, “Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide,” J. Electron. Mat., 27, 1248 (1998).

K. X. Bao, R. Mo, X. G. Zhang, S. Kalisetty, M. Gokhale, J. Robinson, G. Zhao, J. E. Ayers, and F. C. Jain, “Compositional control of CdZnSe grown by photoassisted organometallic vapor phase epitaxy,” J. Cryst. Growth, 170, 497 (1997).

X. G. Zhang, S. Kalisetty, J. Robinson, G. Zhao, D. W. Parent, J. E. Ayers, and F. C. Jain, “Structural properties of ZnSSe/ZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy,” J. Cryst. Growth, 174, 726 (1997).

D. W. Parent, S. Kalisetty, X. G. Zhang, G. Zhao, W. Zappone, J. Robinson, E. Heller, J. E. Ayers, and F. C. Jain, “A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE,” J. Electron. Mat., 26, 710 (1997).

M. R. Gokhale, K. X. Bao, P. D. Healey, F. C. Jain, and J. E. Ayers, “Role of cadmium in enhancing optical properties and chlorine doping of photo-assisted OMVPE-grown ZnSe,” J. Electron. Mat., 25, 207 (1996).

S. Kalisetty, M. Gokhale, K. Bao, J. E. Ayers, and F. C. Jain, “The influence of impurities on the dislocation behavior in heteroepitaxial ZnSe on GaAs,” Appl. Phys. Lett., 68, 1693 (1996).

P. D. Healey and J. E. Ayers, “The instrumental broadening function of the Bartels five-crystal x-ray diffractometer,” Acta Cryst., A52, 245 (1996).

M. R. Gokhale, K. X. Bao, P. D. Healey, F. C. Jain, and J. E. Ayers, “Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe,” J. Cryst. Growth, 165, 25 (1996).

P. D. Healey, K. Bao, M. Gokhale, J. E. Ayers, and F. C. Jain, “X-ray determination of the dislocation densities in semiconductor crystals using a Bartels five-crystal diffractometer,” Acta. Cryst. Sec. A, A51, 498 (1995).

K. Bao, P. D. Healey, M. Gokhale, J. E. Ayers, and F. C. Jain, “Properties of vapor phase epitaxial zinc selenide codoped with cadmium and chlorine,” Appl. Phys. Lett., 67, 1098 (1995).

J. E. Ayers, “New model for the thickness and mismatch dependencies of threading dislocation densities in mismatched heteroepitaxy,” J. Appl. Phys., 78, 3724 (1995).

J. E. Ayers, “The measurement of threading dislocation densities in semiconductor crystals by x-ray diffraction,” J. Cryst. Growth, 135, 71 (1994).

J. E. Ayers and L. J. Schowalter, “Comment on ‘Measurement of the activation barrier to nucleation of dislocations in thin films,’ “ Phys. Rev. Lett., 72, 4055 (1994).

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Post-growth thermal annealing of GaAs on Si (001) grown by organometallic vapor phase epitaxy,” J. Cryst. Growth, 125, 329 (1992).

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Crystallographic tilting of heteroepitaxial layers,” J. Cryst. Growth, 113, 430 (1991).

L. J. Schowalter, J. E. Ayers, S. K. Ghandhi, S. Hashimoto, W. M. Gibson, F. K. LeGoues, and P. A. Claxton, “Strain in Epitaxial GaAs on CaF2/Si (111),” J. Vac. Sci Technol. B, 8, 246 (1990).

J. Ayers and S. K. Ghandhi, “The epitaxy of germanium on gallium arsenide,” J. Cryst. Growth, 89, 371 (1988).

J. Ayers and J. Ladell, “The spectral widths of the Cu k alpha lines,” Phys. Rev. A, 37, 2404 (1988).

I. B. Bhat, K. Patel, N. R. Taskar, J. E. Ayers, and S. K. Ghandhi, “X-ray diffraction studies of CdTe grown on InSb,” J. Cryst. Growth, 88, 23 (1988).

S. K. Ghandhi and J. E. Ayers, “Strain and misorientation in GaAs grown on Si (001) by organometallic epitaxy,” Appl. Phys. Lett., 53, 1204 (1988).

S. K. Ghandhi and J. E. Ayers, “The chemical etching of germanium, J. Electrochem. Soc., 135, 2053 (1988).

Conference Presentations:

J. F. Ocampo, E. Suarez, D. Shah, P. B. Rago, F. C. Jain, and J. E. Ayers, “Overshoot graded layers for defect engineering in heteroepitaxial semiconductor structures,” Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (April 9, 2008).

A. Rodriguez, P. Li, B. Yarlagadda, F. Papadimitrakopoulos, W. Huang, J. Ayers, and F. Jain, “ZnCdSe-ZnSe cladded quantum dots using Photoassisted Microwave Plasma (PMP) enhanced metalorganic chemical vapor deposition for lasers and electroluminescent phosphors,” 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Vol. 3, pp. 137-140 (2006).

B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, and J. E. Ayers, “Elastic Strains in Heteroepitaxial ZnSe1-xTex on InGaAs/InP (001),” 2005 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Cambridge, MA (2005).

P. Li, A. Rodriguez, B. Prakash, R. Shankar, J. E. Ayers, F. C. Jain “Improved interface properties of polyoxide on n-type 4H –SiC by wet oxidation and Ar annealing,” Materials Research Society Fall meeting, Boston, MA (2005).

B. Yarlagadda, A. Rodriguez, P. Li, J. E. Ayers, and F. Jain, “Scan of Azimuthal Mosaic Spread (SAMS): A new method for the characterization of heteroepitaxial layers,” Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (March 17, 2005).

B. Yarlagadda, A. Rodriguez, P. Li, J. E. Ayers, and F. C. Jain, “Compositional control and structural properties of ZnSe1-xTex epitaxial films on lattice-matched InGaAs/InP (001) by Photoassisted metal Organic Vapor Phase Epitaxy,” Materials Research Society Spring Meeting, San Francisco, CA (2004).

Rodriguez, J. Shattuck, X. Zhang, P. Li, F. C. Jain, J. E. Ayers, and D. W. Parent, "Photo-assisted MOVPE growth of ZnMgS on (100) Si," Materials Research Society Fall Meeting, Boston, MA (2001).

X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, “Complete removal of threading dislocations from ZnSe on GaAs (001) by patterned heteroepitaxial processing,” Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (April 3, 2001).

X. G. Zhang, A. Rodriguez, X. Wang, P. Li, F. C. Jain, and J. E. Ayers, “A Novel Approach for the Complete Removal of Threading Dislocations from ZnSe on GaAs (001),” 2000 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Albuquerque, NM, USA (2000).

X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, "A Novel Approach for the Complete Removal of Threading Dislocations from Mismatched Heteroepitaxial Layers," Materials Research Society Fall Meeting, Boston, MA (2000).

D. W. Parent, A. Rodriguez, P. Li, X. G. Zhang, G. Zhao, J. E. Ayers, and F. C. Jain, "The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan," 1999 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1999).

K. Bao, J. E. Ayers, R. Mo, S. Kalisetty, M. Gokhale, J. Robinson, and F. C. Jain, “Compositional control of CdZnSe grown by photoassisted organometallic vapor phase epitaxy,” 8th International Conference on Metal Organic Vapor Phase Epitaxy, Cardiff, Wales, UK (1996).

S. Kalisetty, J. Robinson, X. G. Zhang, J. E. Ayers, and F. C. Jain, “Growth of ZnSSe by photoassisted OMVPE,” 9th International Conference on Vapor Growth and Epitaxy, Vail, CO, USA (1996).

X. G. Zhang, S. Kalisetty, J. Robinson, J. E. Ayers, and F. C. Jain, “Structural Properties of ZnSSe/ZnSe/GaAs (001) heterostructures grown by photoassisted organometallic vapor phase epitaxy,” 1996 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1996).

D. W. Parent, X. G. Zhang, S. Kalisetty, W. Zappone, J. Robinson, G. Zhao, J. E. Ayers, and F. C. Jain, “A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted organometallic vapor phase epitaxy,” 1996 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1996).

M. R. Gokhale, K. X. Bao, P. D. Healey, J. E. Ayers, and F. C. Jain, “Role of cadmium in enhancing optical properties and chlorine doping of photoassisted OMVPE-grown ZnSe,” 37th Electronic Materials Conference, Charlottesville, VA, USA (1995).

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Threading Dislocation Densities in Mismatched Heteroepitaxial Layers,” Materials Research Society Fall 1990 Meeting, Boston, MA, USA (1990).

L. J. Schowalter, J. E. Ayers, S. K. Ghandhi, S. Hashimoto, W. M. Gibson, F. K. LeGoues, and P. A. Claxton, “Strain in epitaxial GaAs on CaF2/Si (111),” Materials Research Society Fall 1989 Meeting, Boston, MA, USA (1989).

Joshua Ladell, John Ayers and John Zola, “Theory and Applications of the Skewed Two-Crystal Monochrocollimator,” American Crystallographic Association Meeting, Philadelphia, PA, USA (1988).

I. B. Bhat, N. R. Taskar, J. Ayers, K. Patel, and S. K. Ghandhi, “CdTe films grown on InSb substrates by organometallic epitaxy,” Materials Research Society Symposia Proceedings, Vol. 90, pp. 471-477 (1987).

I. B. Bhat, N. R. Taskar, K. Patel, J. E. Ayers, S. K. Ghandhi, J. Petruzello, and D. Olego, “Characteristics of OMVPE-grown CdTe and HgCdTe on GaAs,” SPIE, 796, 194 (1987).

Theses and Dissertations:

J. E. Ayers, “Heteroepitaxy in the Ge-GaAs system,” M. S. Thesis, Rensselaer Polytechnic Institute, Troy, NY, USA (May 1987).

J. E. Ayers, “Heteroepitaxy of Mismatched Semiconductors,” Ph. D. Thesis, Rensselaer Polytechnic Institute, Troy, NY, USA (August 1990).

Invention Disclosures:

J. E. Ayers, “A new process for the growth of highly-mismatched heteroepitaxial semiconductors, free from threading dislocations,” University of Connecticut Invention Disclosure, April 4, 1997.

Sponsored Research:

“NUE: "Development of Introductory and Advanced Theory and Laboratory Courses in Nanoelectronics and Optoelectronics" (PI: F. C. Jain Co-Pis: F. Papadimitrakopoulos, R. Magnusson, J. Ayers, G. Sotzing, B. Sinkovic, and Q. Kessel); NSF; July 1, 2003 – June 30, 2006; $200,000.

"Reconfigurable Interconnects, 200-500 GHz SiGe and InGaAs-InP Nanochannel FETs, and 1.55 um Quantum Well Laser Modulators on Silicon for Advanced Systems," (PI: F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, and R. Bansal), Office of Naval Research N000140210883, September 1, 2002-September 30, 2005, $247,000, FRS# 523077.

"Nanochannel FETs and Quantum Dot Based Nonvolatile Memory Cells Using Site-specific and Layer-by-layer Self-Assembly Techniques," (PI: F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, and M. Aindow), National Science Foundation (Nanotechnology Exploratory Research, NER, Initiative), July 1, 2002-June 30, 2005, $93,609 ($11,071), FRS# 523075.

“Novel Mosaic of Micro-interconnects, FETs and Nonvolatile memory for Dynamic Calibration and Reconfiguration of Circuits for Intelligent Microsystems,” (P.I.: F. C. Jain, Co-PI: J. E. Ayers).

NER: Novel mosaic of nanochannel interconnects and sub-20nm transistors via site-specific self assembly for programmable circuits operating above 500 GHz,” (P.I.: Jain, Co-PI: J. E. Ayers).

"Advanced SiGe Field-Effect Transistor Design and Processing Technology to Fabricate 10 Gb/s+Line Interface Circuits for Fiber Optic Communication," (PI: F. C. Jain, Co-PIs: J. E. Ayers, R. Bansal, and F. Papadimitrakopoulos), Connecticut Innovations, Inc., July 1, 2000-June 30, 2004, $290,750, FRS# 630486. This proposal was funded.

"Advanced SiGe Field-Effect Transistor Design and Processing Technology to Fabricate 10 Gb/s+Line Interface Circuits for Fiber Optic Communication," (PI: F. C. Jain, Co-PIs: J. E. Ayers, R. Bansal and F. Papadimitrakopoulos), TranSwitch, July 1,2000-June 30, 2004, $100,000, FRS# 630515. This proposal was funded.

"Nanochannel FETs and Quantum Dot Based Nonvolatile Memory Cells Using Site-specific and Layer-by-layer Self-Assembly Techniques," (PI: F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos and M. Aindow), National Science Foundation (Nanotechnology Exploratory Research, NER, Initiative), July 1, 2002-June 30, 2004,$93,609, FRS# 523075.

"Reconfigurable Interconnects, 200-500 GHz SiGe and InGaAs-InP Nanochannel FETs, and 1.55 um Quantum Well Laser Modulators on Silicon for Advanced Systems," (PI: F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, and R. Bansal), Office ofNaval Research N000140210883, September 1, 2002-September 30, 2005,$247,000, FRS# 523077.

NER: Nano channel FETs and Quantum dot Based Memory Cells Using Site Specific and Layer-by-Layer Self-Assembly; (PI: F. Jain; Co-PI: J. E. Ayers); NSF; June 1, 2002 – June 30, 2003; $99,999.

Novel site-specific processing of nanopatterns (10-30nm) to fabricate ultrahigh performance SiGe quantum well/wire/dot devices, UCRF, $18,609, June 1, 2000- May 31, 2001 (PI: F. Jain, Co-PIs: J. Ayers and F. Papadimitrakopoulos).

“Patterned Heteroepitaxial Processing: A New Approach to Mismatched Heteroepitaxy for the Fabrication of High Performance Semiconductor Devices,” PI: J. E. Ayers, Co-PI: F. C. Jain, NSF, July 1, 1999 – Dec. 31, 2000, $35,312, FRS #521032.

“Reliability Study of Oxidized Deposited Polysilicon (ODP) Gate Oxide for SiC Power MOSFETs,” PI: J. E. Ayers, Co-PIs: A. F. M. Anwar and F. C. Jain, NSF, July 1, 1999 – May 31, 2001, $38,898, FRS # 521036.

“Development of High Brightness Quantum Dot Based Nanophosphors for Electroluminescent Flat Panel Displays and Illuminators”, Ballistic Missile Defense Organization (Contract N00178-98-C-3035) /E-Lite Technologies Inc., Phase I (22K) May 15-November 14, 1998; Fast Track ($11.5.K) November 14-February 14, 1999; Phase II, April 15-June 30, 2001 [PI: F. C. Jain, Co-PIs: F. Papadimitrakopoulos and J. Ayers], $560,000, FRS#522418.

“Development of Low Voltage, High Brightness Flexible Electroluminescent Lamps for Display Applications”, CII/Yankee Ingenuity Grant 97G025, $ 200K, August 12, 1998-August 11, 2000 (PI: F. Jain, Co-PIs: F. Papadimitrakopoulos and J. Ayers). ($100K), FRS# 633377.

“MOCVD Reactor for Nanocrystal Growth” UCRF, January, 1998-December, $14.5K (PI:F. Jain, Co-PIs: F. Papadimitrakopoulos and J. Ayers). ($7.5K), FRS#440104.

“Electroluminescent flat panel displays using MOCVD grown ZnS and ternary compounds for enhanced blue emission,” PI: F. C. Jain, Co-PI: J. E. Ayers, UCRF, Jan. 1, 1998 - Dec. 31, 1998, $14,711.00, FRS #440922.

“Mismatched heteroepitaxy for the fabrication of high-performance semiconductor devices,” PI: J. E. Ayers, Co-PI’s: F. C. Jain, A. F. M. Anwar, UCRF, June 1, 1997 - May 31, 1998, $9,407.00, FRS #441517.

“Study of Dark-Line Defects in II-VI Heterostructures,” PI: J. E. Ayers, UCRF, Sept. 1995 - Jan. 1997, $4,480., FRS # 441517.

“New Approaches to the Fabrication of Blue Semiconductor Laser Diodes by Vapor Phase Epitaxy,” PI: J. E. Ayers, NSF, July 1993 - Jan. 1997, $89,992 ($10,000 matching), FRS #521714.