ECE Seminar Series: Quantum Dot Channel FETs and Nonvolatile Memories: Fabrication and Modeling

ECE title

ECE Seminar Series Fall 2017

Wednesday November 15th 2:30pm-3:30 PM, GENT 103

Quantum Dot Channel FETs and Nonvolatile Memories: Fabrication and Modeling

Dr. Jun Kondo

Abstract: This talk presents modeling and fabrication of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrtes. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation, and are expected to make a significant impact on the digital circuit design. Quntum dot channel FETs are also configured as floating gate quatnum dot nonvolatile memories (QDC-QDNVMs). In NVMs, we use floating gate comprising of GeOx-Ge quantum dots. QD nonvolatile memories (QD-NVMs) are fabricated on polysilicon thin films usingn SOI substrates. HfAlO2 high-k insulator laeyrs are used for both tunnel gate oxide as well as conhtrol gate dielectric. QDC-NVMs provide not only significantly higher ID current flow, but also significantly higher threshold voltage shifts which improve the threshold voltage variation, and show the potential for fabricating multi-bit nonvolatile memories.