ECE WEB

A. Anwar
Professor, Associate Dean for Research & Graduate Education
Office: ITE Building 433
Phone: (860) 486-3979
Email: anwara@engr.uconn.edu

Education:
B.S., Electrical and Computer Engineering, Bangladesh University of Engineering and Technology, 1982
M.S., Electrical and Computer Engineering, Bangladesh University of Engineering and Technology, 1984
Ph.D., Electrical and Computer Engineering, Clarkson University, 1988

Research Interests:
study of localization in 1-D structures, transport in semiconductor devices, impurity diagnostics in quantum well structures, noise in semiconductor devices, stochastic quantum mechanics.

Memberships:
Institute of Electrical and Electronics Engineers (IEEE)
Electron Devices Society
Institute of Engineers Bangladesh
Bangladesh Computer Society (BCS)

Recent Publications
Active Research Projects
Professional Activities

Recent Publications:
Archival Technical Journal Publications:

" Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs, " (with R. T. Webster), Solid-State Electronics, Vol. 48, pp. 2007-2011, 2004.

" Growth Parameter Depedence of Gain Compression in AlGaN/GaN HFETs, " (with E. W. Faraclas and S. S. Islam), Solid-State Electronics, Vol. 48, pp. 1849-1853, 2004.

" Dependence of RF Performance of GaN/AlGaN HEMTs upon AlGaN Barrier Layer Variation, " (with E. Faraclas, R. T. Webster and G. Brandes), International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 750-755, 2004.

" SPICE Model of AlGaN/GaN HEMTs and Simulation of VCO and Power Amplifier, " (with S. S. Islam), International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 853-859, 2004.

" Response to Comment on Carrier Trapping and Current Collapse Mechanism in GaN Metal-Semiconductor Field Effect Transistors, " (with S. S. Islam and R. T. Webster), Applied Physics Letters, Vol. 86, pp. 16102-1-16102-2, January 3, 2005.

"Carrier Trapping and Current Collapse Mechanism in GaN Metal-semiconductor Field-effect Transistors," (with S. S. Islam and R. T. Webster), Applied Physics Letters, Vol. 84, pp. 1970-1972, March 15, 2004.

"A Physics Based Frequency Dispersion Model of GaN MESFETs," (with S. S. Islam and R. T. Webster), IEEE TED, Vol. 51, No. 6, pp. 846-853, June, 2004.

Books, Book Chapters, Book Sections & Edited Volumes:

"Resonant Tunneling Devices," (with M. M. Jahan), Encyclopedia of Nanoscience and Nanotechnology, Vol. 9, pp. 357-370, (H. S. Nalwa, ed.), American Scientific Publishers, ISBN: 1-58883-001-2, March, 2004.

"Quantum Well Infrared Photodetectors," (with K. R. Lefebvre), Encyclopedia of Nanoscience and Nanotechnology, Vol. 9, pp. 199-224, (H. S. Nalwa, ed.), American Scientific Publishers, ISBN: 1-58883-001-2, March, 2004.

Conference Proceedings & Other Publications:

" Localization and Shot Noise in Nanostructures, " Proceedings of SPIE, Vol. 5593, p. 408, (M. S. Islam and A. K. Dutta, eds.), Philadelphia, Pennsylvania, 2004.

" Dependence of RF Performance of GaN/AlGaN HEMTs upon Barrier AlGaN Layer Thickness and Mole Fraction Variation, " (with E. W. Faraclas, R. T. Webster and G. Brandes), Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, pp. 63-64, Rensselaer Polytechnic Institute, Troy, New York, August 4-6, 2004.

" Temperature Dependence on Impact Ionization in AlGaAsSb/InGaAs/AlGaAsSb Metamorphic HEMTs, " (with R. T. Webster), Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, pp. 83-84, Rensselaer Polytechnic Institute, Troy, New York, August 4-6, 2004.

" SPICE Model of AlGaN/GaN HEMTs and Simulation of VCO and Power Amplifiers, " (with S. S. Islam), Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, pp. 118-119, Rensselaer Polytechnic Institute, Troy, New York, August 4-6, 2004.

"Growth Dependence of Gain Compression in AlGaN/GaN HFETs," (with E. Faraclas and S. S. Islam), Proceedings of the 2003 International Semiconductor Device Research Symposium, p. 110, Washington, DC, 2003.

"BSIM3v3 Parameter Extraction and Design of VCO using SiGe Hetero-CMOS," (with S. S. Islam), Proceedings of the 2003 International Semiconductor Device Research Symposium, p. 168, Washington, DC, 2003.

"Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs," (with R. T. Webster), Proceedings of the 2003 International Semiconductor Device Research Symposium, p. 186, Washington, DC, 2003.

"Barrier Thickness and Mole Fraction Dependence of Power Performance of Undoped Supply Layer AlGaN/GaN HFETs," (with S. S. Islam and M. N. Rahman), Proceedings of the 2003 International Semiconductor Device Research Symposium, p. 441, Washington, DC, 2003.

"Temperature Dependent Transport Parameters in Short GaN Structures," (with S. Wu and R.T. Webster), Proceedings of the 4th International Conference on Nitride Semiconductors-Part B, (F. A. Ponce and A. Bell, eds.), pp. 575-578, Denver, 2001.

"Gain Compression in GaN HEMT Amplifiers," (with A. Ahmed and S.S. Islam), Proceedings of the 2001 International Semiconductor Device Research Symposium, p. 205, Washington, DC, December 5-7, 2001.

"GaN/AlGaN HEMT Microwave Class-E Amplifier," (with S.S. Islam), Proceedings of the 2001 International Semiconductor Device Research Symposium, p. 446, Washington, DC, December 5-7, 2001.

"RF Performance of GaN/AlGaN HEMT Amplifier," (with S.S. Islam), Proceedings of the 2001 International Semiconductor Device Research Symposium, p. 209, Washington, DC, December 5-7, 2001.

"Effects of Impurity Traps on Gate Current and Trapped Charge in MOSFETs," (with S.S. Islam and M.R. Khan), Proceedings of the 2001 International Semiconductor Device Research Symposium, p. 98, Washington, DC, December 5-7, 2001.

"Large Signal Modeling of GaN FET and Nonlinearity Analysis Using Volterra Series," (with S.S. Islam), Proceedings of the 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 267-270, Seattle, WA, June 2002.

Active Research Projects:

"IPA Sabbatical Leave ," Department of Defense-Air Force, July 19, 2004-August 23, 2005.

" Physical Model for Short GaN HFET Devices ," Raytheon, September 1, 2002-August 31, 2005.

Professional Activities:
Editor, IEEE Transactions on Electron Devices.
Session Chair, Optics East, Philadelphia, Pennsylvania, October, 2004.
Member, Program Committee, Nano-Sensors and Devices, Optics East, Boston, MA, 2005.
Member, Program Committee, Nano Integrations, Optics East, Boston, MA, 2005.
Panel Reviewer, National Science Foundation, December, 2004.
Chair, National Science Foundation Review Panel, June, 2005.

" Localization and Shot Noise in Nano-Structures,"Optics East, (invited), Philadelphia, Pennsylvania, 2004.

"III-V High Frequency HEMTs," (invited) XI International Workshop on the Physics of Semiconductor Devices, Delhi, India, December 11-15, 2001.

"GaN and InP Based HEMTs," (invited) Electrical and Electronic Engineering Department, BUET, December 24, 2001.