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Helena Silva
Associate Professor
Office: ITE 457
Phone: (860) 486-5517
Email: hsilva@engr.uconn.edu

 

 


 Group PageNanoelectronics Lab

Education

  • Ph.D. Applied Physics, Cornell University (2005)
  • M.S. Applied Physics, Cornell University (2002)
  • Lic., Engineering Physics, Universidade Tecnica de Lisboa (1998)

Research Interests
Nanoelectronic devices, electronic and thermal transport at small scales, non-volatile memory devices, large area electronics, solar cells, light emitting devices, nanofabrication techniques.

Memberships

  • Institute of Electrical and Electronics Engineers (IEEE), Senior Member
  • American Physical Society (APS)
  • Materials Research Society (MRS)

Publications

Book Chapter: A. Faraclas, A. Gokirmak, H. Silva, Phase-change memories and electrothermal modeling, in Nanoscale Semiconductor Memories: Technology and Applications, CRC Press, edited by Santosh K. Kurinec and Krzysztof Iniewski, 2013.

Journal Articles

31) F. Dirisaglik, G. Bakan, A. Faraclas, A. Gokirmak, H. Silva, “Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures,” Intl. Journal of High Speed Electronics and Systems, May 2014 (Special Issue CMOC 2013)

30) A. Faraclas, G. Bakan, L. Adnane, F. Dirisaglik, N. Williams, A. Gokirmak and H. Silva, “Modeling of thermoelectric effects in phase change memory cells,” IEEE Trans. on Electron Devices, 61, 2, 372-387, 10.1109/TED.2013.2296305 (2014).

29) M. Trombetta, N. Williams, S. Fischer, A. Gokirmak, H. Silva, “Finite element electrothermal modeling of nanocrystalline phase-change materials using a mesh-based crystallinity approach,” Electronic Letters 50, 2, pp. 100-101, DOI:  10.1049/el.2013.2253 (2014).

28) G. Bakan, N. Khan, H. Silva, A. Gokirmak, “High-temperature thermoelectric transport at small scales: generation, transport and recombination of minority carriers,” Scientific Reports 3, 2724, doi:10.1038/srep02724 (2013).

27) N. Kan’an, A. Faraclas, N. Williams, H. Silva and A. Gokirmak, “Computational Analysis of Rupture Oxide Phase Change Memory Cells”, IEEE Trans. on Electron Devices, 60, 5, 1649-1655, 10.1109/TED.2013.2255130 (2013).

26) S. Fischer, C. Osorio, N. Williams, S. Ayas, H. Silva, A. Gokirmak, “Percolation transport and filament formation in nanocrystalline silicon nanowires,” Journal of Applied Physics 113, 16, 164902 – 164902-5 (2013).

25) K. Cil, Y. Zhu, J. Li, C. H. Lam, H. Silva, “Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride,” Thin Solid Films 536, 216–219, http://dx.doi.org/10.1016/j.tsf.2013.03.087 (2013).

24) K. Cil, F. Dirisaglik, M. Wennberg, A. King, A. Faraclas, M. Akbulut, Y. Zhu, C. Lam, A. Gokirmak, H. Silva, “Electrical resistivity of liquid Ge2Sb2Te5 nanostructures,” IEEE Trans. on Electron Devices 60, 1, 433-437 (2013).

23) G. Bakan, L. Adnane, A. Gokirmak, H. Silva, “Extraction of electrical resistivity and thermal conductivity up to melting temperature from self-heated silicon microwires,” Journal of Applied Physics 112, 063527 (2012).

22) N. Williams, H. Silva, A. Gokirmak, “Finite Element Analysis of Scaling of Micro Thermoelectric Generators,” AIP Journal of Renewable and Sustainable Energy 4, 043110 (2012).

21) N. Williams, H. Silva, A. Gokirmak, “Nanoscale ringFETs,” IEEE Electron Device Letters 33, 10, 1339-1341 (2012).

20) A. Cywar, A. Gokirmak, H. Silva, “Finite Element Modeling of a Nanowire-Based Oscillator Achieved Through Solid-Liquid Phase Switching for GHz Operation”, Solid State Electronics 78, 97-101 (2012).

19) A. Cywar, J. Li, C. Lam, H. Silva, “The impact of heater-recess and load matching in phase change memory mushroom cells,” Nanotechnology 23, 22, 225201(2012).

18) M. Staruch, K. Cil, H. Silva, J. Xiong, Q.X. Jia, and M. Jain, “Effect of Mn Doping on the Properties of Sol-gel Derived Pb0.3Sr0.7TiO3 Thin Films,” Integrated Ferroelectrics (special issue, invited)

17) H. Silva, G. Bakan, A. Cywar, N. Williams, N. Henry, F. Dirisaglik, A. Gokirmak, “Crystallization of silicon microstructures through rapid self-heating for high-performance electronics on arbitrary substrates,” Nanoscience and Nanotechnology Letters 4, 962-969 (2012) (special issue, invited)

16) H. Peng, K. Cil, A. Gokirmak, G. Bakan, Y. Zhu, C. Lai, C. Lam and H. Silva, “Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride,” Thin Solid Films, vol. 520, pp. 2976-2978, 2011.

15) A. Faraclas, N. Williams, A. Gokirmak and H. Silva, Modeling of Set and Reset Operations of Phase-Change Memory Cells, IEEE Electron Device Letters, 32, 12, 1737 – 1739 (2011).

14) A. Cywar, F. Dirisaglik, M. Akbulut, G. Bakan, S. Steen, H. Silva, and A. Gokirmak, “Scaling of silicon phase-change oscillators,” IEEE Electron Device Letters, 32, 11, 1486 – 1488 (2011).

13) G. Bakan, N. Khan, A. Cywar, K. Cil, M. Akbulut, A. Gokirmak and H. Silva, ‘Self-heating of silicon microwires: Crystallization and thermoelectric effects,’ Journal of Materials Research, 26: 1061-1071, Invited Feature Paper (2011).

12) A. Cywar, G. Bakan, H. Silva, A. Gokirmak, “Nanosecond Pulse Generation in a Silicon Microwire,” IEEE Electron Device Letters 31, 12, 1362-1364 (2010).

11) G. Bakan, A. Cywar, H. Silva and A. Gokirmak, “Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating,” Applied Physics Letters, 94, 251910-1 – 251910-3 (2009).

10) A. Cywar, G. Bakan, C. Boztug, H. Silva and A. Gokirmak, “Phase-change oscillations in silicon microwires,” Applied Physics Letters, 94, 072111-1 – 072111-3 (2009).

9) K. M. Fan, C. S. Lai, H. Silva, C. F. Ai and C. R. Chen, “Programming Speed Enhancement by NH Plasma Nitridation of Tunneling Oxide for Ge Nanocrystals Memory,” J. Electrochem. Soc., vol. 155, pp. H889 – H894, (2008).

8) K. J. Lee, R. LaComb, B. Britton, M. Shokooh-Saremi, H. Silva, E. Donkor, Y. Ding and R. Magnusson, “Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth,” IEEE Photonics Technology Letters, vol. 20, 1857-1859 (2008).

7) H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett., vol. 88, pp. 102105-1 – 102105-3 (2006).

6) H. Silva and S. Tiwari, “A nanoscale memory and transistor using backside trapping,” IEEE Transactions on Nanotechnolog 3, 264-269 (2004).

5) H. Silva, M. K. Kim, U. Avci, A. Kumar and S. Tiwari, “Nonvolatile Silicon Memory at the Nanoscale,” Materials Research Soceity Bulletin, 845-851 (2004).

4) M. K. Kim, S. D. Chae, H. S. Chae, J. H. Kim, Y. S. Jeong, J. W. Lee, H. Silva, S. Tiwari and C. W. Kim, “Ultrashort SONOS Memories,” IEEE Transactions on Nanotechnology 3, 417-424 (2004).

3) S. Tiwari, J. A. Wahl, H. Silva, F. Rana and J. J. Welser, “Small silicon memories: confinement, single-electron,. and interface state considerations,” Applied Physics A, 71, 403-414 (2000).

2) V. Chu, H. Silva, L. M. Redondo, C. Jesus, M. F. Silva, J. C. Soares and J. P. Conde, “Ion implantation of microcrystalline silicon for low process temperature top gate thin film transistors,” Thin Solid Films, vol. 337, pp. 203-207 (1999).

1) V. Chu, J. Jarego, H. Silva, T. Silva, M. Reissner, P. Brogueira and J. P. Conde, “Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates,” Applied Physics Letters, 70, 2714-2716 (1997).

Conference Proceedings (full-length papers)

29) M. B. Akbulut, F. Dirisaglik, A. Cywar, A. Faraclas, D. Pence, J. Patel, S. Steen, R. Nunes, H. Silva, A. Gokirmak, “Narrow-channel accumulated-body bulk Si MOSFETs with wide-range dynamic threshold voltage tuning,” 2013 IEEE Device Research Conf., pp. V.C-6 (late news) (2013).

28) M. B. Akbulut, H. Silva, A. Gokirmak, “Pentagate approach to reduce the line edge roughness effects in bulk Si tri-gate transistors,” 2012 Mat. Res. Soc. Fall Meeting Proceedings, vol. 1510 (2012). 

27) A. Faraclas, N. Williams, F. Dirisaglik, K. Cil, A. Gokirmak, H. Silva, “Operation dynamics in phase-change memory cells and the role of access devices,” 2012 IEEE Computer Society Annual Symp. on VLSI, invited, pp. 78-83 (2012).

26) A. Faraclas, N. Williams, G. Bakan, A. Gokirmak, H. Silva, “Comparison of Instantaneous Crystallization and Metastable Models in Phase Change Memory Cells,” Proc. 2012 IEEE Device Research Conference, 145-146 (2012).

25) N. Williams, A. Gokirmak, “Hydrodynamic Simulations of a nanoscale ringFET”, IEEE 2011 Intl. Semiconductor Device Research Symposium (ISDRS) (2011).

24) A. Faraclas, N. Williams, A. Gokirmak, H. Silva, “Simulation comparison of reset operation for mushroom phase change memory cells with different access device,” IEEE 2011 Intl. Semiconductor Device Research Symposium (ISDRS) (2011).

23) S. Fischer, C. Osorio, N. Williams, H. Silva, A. Gokirmak, “Finite element modeling of current-induced filaments in nanocrystalline silicon”, IEEE 2011 Intl. Semiconductor Device Research Symposium (ISDRS) (2011).

22) A. Cywar, G. Bakan, A. Gokirmak, H. Silva, “Silicon nanowire-based oscillator achieved through solid-liquid phase switching,” IEEE 2011 Intl. Semiconductor Device Research Symposium (ISDRS) (2011).

21) F. Dirisaglik, G. Bakan, A. Gokirmak, H. Silva, “Modeling of thermoelectric effects in phase change memory cells,” IEEE 2011 Intl. Semiconductor Device Research Symposium (ISDRS) (2011).

20) N. Williams, A. Gokirmak, H. Silva, “Finite Element Simulations on Scaling Effects of 3D SiGe Thermoelectric Generators,” Mater. Res. Soc. Symp. Proc. Vol. 1388 (2012).

19) G. Bakan, N. Khan, H. Silva and A. Gokirmak, “Thermoelectric effects in current induced crystallization of silicon microstructures,” in MEMS and Nanotechnology, Volume 4, Springer, 2011, pp. 9-16.

18) G. Bakan, A. Cywar, C. Boztug, M. Akbulut, H. Silva and A. Gokirmak, “Annealing of nanocrystalline silicon micro-bridges with electrical stress,” in Mater. Res. Soc. Symp. Proc. Fall 2008, 2009, pp. LL03-25.

17) G. Bakan, K. Cil, A. Cywar, H. Silva and A. Gokirmak, “Measurements of liquid silicon resistivity on silicon microwires,” in Mater. Res. Soc. Symp. Proc. Spring 2009, 2009, pp. AA06-06.

16) G. Bakan, A. Cywar, K. Cil, F. Dirisaglik, H. Silva and A. Gokirmak. Phase-change oscillations in silicon wires. Presented at IEEE Device Research Conference Digest. IEEE DRC 2009

15) C. Boztug, G. Bakan, M. Akbulut, N. Henry, A. Gokirmak and H. Silva, “Numerical modeling of electrothermal effects in silicon nanowires,” in Mater. Res. Soc. Symp. Proc. Spring 2008, 2008, pp. R04-11.

14) Thompson, M.D., Morehouse, P.W., Ramesh, P., Shaw, J.G., Silva, H., “Electrical properties of a magnetic brush using a high resolution field probe,” 2007 International Conference on Digital Printing Technologies, pp. 48-52.

13) A. Gokirmak and H. Silva, “Composite shallow trench isolation using silicon nitride and doped polysilicon for ultra-low-power CMOS”, 212th Electrochemical Society Meeting (2007).

12) A. Gokirmak, H. Silva, “PentaGate silicon MOSFET,” Proc. 2007 IEEE Device Research Conference Digest, late news (2007).

11) S. Tiwari, A. Kumar, C. C. Liu, H. Lin, S. K. Kim, H. Silva, “Electronics at nanoscale: Fundamental and practical challenges, and emerging directions,” 2006 IEEE Conference on Emerging Technologies – Nanoelectronics, 481-486 (2006).

10) H. Silva and S. Tiwari, “Back-side storage non-volatile memories: Ultra-thin silicon single crystal silicon layers with complex thin film structure underneath,” in Proc. of Mater. Res. Soc. 2004, pp. D1.4.

9) S. Tiwari, H. Silva, M. K. Kim, A. Kumar and U. Avci, “Non-Volatile Silicon Memories at the Nanoscale,”Invited Paper, Proceedings of the International Electron Devices and Materials Symposia, 11-14(2004).

8) S. Tiwari, U. E. Avci, C. C. Liu, L. Xue, A. Kumar, S. K. Kim, H. Silva, “Are we there yet? Looking beyond the end of scaling in the nanometer era,” in Proc. SPIE International Society for Optical Engineering 2003, pp. 456-465.

7) H. Silva, M. K. Kim, A. Kumar, U. Avci and S. Tiwari, “Few electron memories: Finding the compromise between performance, variability and manufacturability at the nano-scale,” in 2003 IEEE Intl. Electron Devices Meeting, pp. 10.5. (2003).

6) H. Silva, M. K. Kim, C. W. Kim and S. Tiwari, “Scaled front-side and back-side trapping SONOS memories on SOI,” Proc. 2003, IEEE International SOI Conference, pp. 105-106 (2003).

5) M.K. Kim, S.D. Chae, J.H. Kim, S.W. Yoon, Y.S. Jeong, H. Silva, S. Tiwari, and C.W. Kim, “Ultra-Short SONOS Memories,” Technical Digest of IEEE Silicon Nanoelectronics Workshop (2003).

4) H. Silva and S. Tiwari, “A Scalable Nano-Transistor and Memory using Back-Side Trapping,” Tech. Dig. of IEEE Silicon Nanoelectronics Workshop (2003).

3) V. Chu, J. Jarego, H. Silva, T. Silva, M. Boucinha and J. P. Conde, “Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate,” in 1999, pp. 905-909. Mater. Res. Soc. Symp. Proc. Vol. 467

2) J. P. Conde, H. Silva and V. Chu, “The effect of hydrogen dilution on hot-wire thin-film transistors,” in 1999, pp. 909-914. Mater. Res. Soc. Symp. Proc. Vol. 467

1) J. A. Wahl, H. Silva, A. Gokirmak, A. Kumar, J. J. Welser and S. Tiwari, “Write, erase and storage times in nanocrystal memories and the roleof interface states,” in 1999, pp. 375-378. IEEE 1999 Intl. Electron Devices Meeting (1999).

 

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