This laboratory is equipped with CVD reactors for Ge
and Si growth; MOCVD reactors for ZnS, ZnMgSSe, ZnZnCdSe growth
(including a quantum dot growth setup) and PL and X-Ray setups for
characterization; a photolithographic clean room to process lasers, transistors
and integrated circuits; measurement setups to characterize lasers,
modulators, and filters; and dedicated workstations for computer-aided design
(Cadence) and simulation. Current research is focused on 1.55 micron MQW
optical modulators, tunable lasers, SiGe FETs,
terahertz MODFETs and quantum interference transistors, quantum dot-based nan
phosphors and laser
Dot Channel FETs and Nonvolatile Random Access Memory.
Dot Optical Modulators and Lasers.
Wavefunction Switched (SWS) FETs and 2-bit Compact SRAMs.
Analyte Biosensor Platform.