{"id":4,"date":"2017-01-13T22:08:15","date_gmt":"2017-01-13T22:08:15","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/ali-gokirmak\/?page_id=4"},"modified":"2024-06-29T14:09:33","modified_gmt":"2024-06-29T14:09:33","slug":"home","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/","title":{"rendered":"Ali Gokirmak"},"content":{"rendered":"<div><\/div>\n<p><b><img loading=\"lazy\" decoding=\"async\" class=\" wp-image-11 alignleft\" src=\"http:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-300x300.jpg\" alt=\"\" width=\"204\" height=\"204\" srcset=\"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-300x300.jpg 300w, https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-1024x1024.jpg 1024w, https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-150x150.jpg 150w, https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-768x768.jpg 768w, https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic-624x624.jpg 624w, https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-content\/uploads\/sites\/22\/2021\/06\/ali-g-profile-pic.jpg 1280w\" sizes=\"auto, (max-width: 204px) 100vw, 204px\" \/>Ali Gokirmak<\/b><br \/>\nProfessor<br \/>\nPhone: (860) 486-9425<br \/>\nali.gokirmak<\/p>\n<p>(at) uconn.edu<\/p>\n<p><strong>Links<\/strong><\/p>\n<p><a href=\"http:\/\/electron.engr.uconn.edu\/\" target=\"_blank\" rel=\"noopener\">Nanoelectronics Laboratory<br \/>\n<\/a><a href=\"http:\/\/www.facebook.com\/Nanoelectronics\" target=\"_blank\" rel=\"noopener\">Nanoelectronics Laboratory Facebook Page<br \/>\n<\/a><a title=\"Gokirmak publications and citations\" href=\"http:\/\/scholar.google.com\/citations?user=27B16skAAAAJ&amp;hl=en\" target=\"_blank\" rel=\"noopener\">Google Scholar Profile<\/a><br \/>\n<a title=\"Gokirmak publications and citations\" href=\"https:\/\/drive.google.com\/drive\/folders\/1gq3ebV9axI_49gZk3P-Gi6h_IN0SO2Oe?usp=sharing\" target=\"_blank\" rel=\"noopener\">PDFs of Journal and Conference Publications<\/a><\/p>\n<p><strong>Education:<\/strong><\/p>\n<ul>\n<li>Ph.D. Electrical &amp; Computer Engineering, Cornell University, 2005<\/li>\n<li>M.S. Electrical &amp; Computer Engineering, Cornell University, 2002<\/li>\n<li>B.S. Physics, University of Maryland at College Park, 1998<\/li>\n<li>B.S. Electrical Engineering, University of Maryland at College Park, 1998<\/li>\n<\/ul>\n<p><strong><strong><a title=\"Gokirmak key publication: Thermoelectric effects in self heated semiconductors\" href=\"http:\/\/www.nature.com\/srep\/2013\/130923\/srep02724\/full\/srep02724.html\" target=\"_blank\" rel=\"noopener\">Key Publication<\/a> and <a title=\"Video Abstract of thermoelectric effects in self-heated semiconductors\" href=\"http:\/\/youtu.be\/1IsoUKZcBec\" target=\"_blank\" rel=\"noopener\">Video Abstract<br \/>\n<\/a><\/strong><br \/>\nResearch Interests:<br \/>\n<\/strong><\/p>\n<ul>\n<li>Phase change memory (PCM)<\/li>\n<li>Thermoelectric effects<\/li>\n<li>Phase change logic<\/li>\n<li>Current induced crystallization<\/li>\n<li>Applications of nanostructures<\/li>\n<li>Nanofabrication technologies<\/li>\n<li>Small-scale MOSFET&#8217;s for sensors, logic and non-volatile memories<\/li>\n<li>Electrical characterization<\/li>\n<li>Finite element modeling<\/li>\n<\/ul>\n<p><strong>Federal Research Grants<\/strong> (Share: $3M, Leading: $2.8M, Total involved: $11.2M, UConn Nanoelectronics Laboratory total: $5.1M)<\/p>\n<ul>\n<li><strong>DURIP<\/strong> (Defense University Research Instrumentation Program): #FA9550-18-1-0290 <em>\u201cPhysical vapor deposition system,\u201d<\/em> Ali Gokirmak, Helena Silva ($471,500, 50%), <em>8\/13\/2018-8\/12\/2020<\/em>.<\/li>\n<li><strong>NSF <\/strong>ECCS 1711626:<em> \u201cIntegration of Phase Change Devices with Silicon Electronics for Increased Functionality and Performance<\/em>,\u201d Ali Gokirmak, <em>($487,999, 100%), 7\/1\/2017 &#8211; 07\/31\/2023.<\/em><\/li>\n<li><strong>AFOSR<\/strong> (Air Force Office of Scientific Research) FA9550-14-1-0351Z MURI: <em>\u201cDevelopment of Universal Security for evaluation and design of nanoscale devices,\u201d<\/em> Tehranipoor, M. Van Dijk, A. Gokirmak, H. Silva, D. Forte, J. Shi, G. Qu, A. Srivastava, F. Koushanfar <em>($7,400,000, 10%), 11\/2014-12\/2020. <\/em><\/li>\n<li><strong>DOE<\/strong> <strong>BES<\/strong> (Dept. of Energy, Basic Energy Sciences): <em>\u201cCrystallization and thermoelectric transport in semiconductor nanostructures,\u201d<\/em> Gokirmak, H. Silva <em>($450,000, 50%), 9\/1\/2013-8\/31\/2016.<\/em><\/li>\n<li><strong>NSF<\/strong> ECCS 1150960: \u201cCAREER: Phase-change memories and electro-thermal effects at nanoscale,\u201d A. Gokirmak <em>($532,800, 100%),<\/em> <em>2\/1\/2012-7\/31\/2018.<\/em><\/li>\n<li><strong>DOE<\/strong> <strong>BES<\/strong> (Dept. of Energy, Office of Basic Energy Sciences): <em>\u201cCrystallization and thermoelectric transport in silicon nanostructures,\u201d<\/em> Gokirmak, H. Silva <em>($512,000, 50%), 9\/1\/2010-8\/31\/2013.<\/em><\/li>\n<li><strong>NSF<\/strong> ECCS <em>0824171: <\/em><em>&#8220;GOALI: Side gated ultra narrow channel silicon MOSFETs and transport studies at nanometer scale,&#8221; <\/em> Gokirmak and R. Nunes, <em>($307,075 100%), 8\/1\/2008-7\/31\/2013. <\/em><\/li>\n<li><strong>NSF<\/strong> CCMI <em>0730826<\/em> &#8220;EXP-LA: Real-time, compact, and ultra sensitive sensor arrays for explosives vapor detection,&#8221; Y.Lei, Y. Yan, C. Brueckner, A. Gokirmak ($792,404, ~5%), <em>9\/1\/2007-8\/1\/2010.<\/em><\/li>\n<li><strong>NSF<\/strong> ECCS <em>0702307<\/em> &#8220;Tunable Photonic Nanostructures Exhibiting Plasmonic and Leaky-mode Resonances,&#8221; R. Magnusson, A. Gokirmak ($300,000, 50%), <em>5\/23\/2007-5\/22\/2010.<\/em><\/li>\n<\/ul>\n<p><strong>Awards:<\/strong><\/p>\n<ul>\n<li>2019-2020 Electrical &amp; Computer Engineering Outstanding Teaching Award, University of Connecticut<\/li>\n<li>2020-2022 Charles H. Knapp Endowed Professorship<\/li>\n<li>2012 NSF CAREER Award<\/li>\n<li>Spring 2009 Dean of Engineering recognition for outstanding teaching, University of Connecticut<\/li>\n<li>2008-2009 Electrical &amp; Computer Engineering Outstanding Teaching Award, University of Connecticut<\/li>\n<li>2000-2003 IBM Ph.D. Fellowship<\/li>\n<li>1997-1998 Roberta Ma Scholarship, University of Maryland College Park<\/li>\n<\/ul>\n<p><strong>PhD Thesis Supervised at <em>UConn <\/em><\/strong><\/p>\n<ul>\n<li><strong>Gokhan Bakan <\/strong><em>\u201cThermoelectric Effects in Self-heating Silicon Microwires,\u201d<\/em> 1\/2013 (Major Co-Advisor)<\/li>\n<li><strong>Faruk Dirisaglik <\/strong><em>\u201cHigh-Temperature Electrical Characterization of Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> Phase Change Memory Devices,\u201d<\/em> 10\/2014 (Advisor)<\/li>\n<li><strong>Mustafa Akbulut, <\/strong>\u201cNarrow Channel Accumulated Body MOSFETs: Design, Modeling and Experimental Verification,\u201d 8\/2015 (Major Co-Advisor)<\/li>\n<li><strong>Adam Cywar, <\/strong><em>\u201cMelting and Crystallization of Si and Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> Nanostructures,\u201d<\/em> 1\/2016 (Advisor)<\/li>\n<li><strong>Nadim Kan\u2019an, <\/strong><em>\u201cPhase Change Devices for Nonvolatile Logic,\u201d<\/em> 5\/2017 (Advisor)<\/li>\n<li><strong>Kadir Cil, <\/strong><em>\u201cTemperature Dependent Characterization and Crystallization Dynamics of Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> in Films and Nanoscale Structures,\u201d 12\/2015 (<\/em>Associate Advisor<em>)<\/em><\/li>\n<li><strong>Nicholas Williams, <\/strong><em>\u201cEfficiency Enhancement of Micro-Thermoelectric Generators via Scaling and Minority Carrier Extraction,\u201d<\/em> 2\/2016 (Associate Advisor)<\/li>\n<li><strong>Lhacene Adnane, <\/strong><em>\u201cHigh Temperature Characterization of Ge2Sb2Te5 Thin Films for Phase Change Memory Applications,\u201d<\/em>1\/2011 \u2013 10\/2018 (Associate Advisor)<\/li>\n<li><strong>Nafisa Noor, <\/strong><em>\u201cPhase Change Memory Devices for Hardware Security,\u201d<\/em> 1\/2015 &#8211; 3\/2019 (Associate Advisor)<\/li>\n<li><strong>Sadid Muneer, <\/strong><em>\u201cNon-Equilibrium Non-isothermal Semiconductor Modeling and its Application to Phase Change Memory,\u201d <\/em>8\/2011 \u2013 3\/2019 (Major Co-Advisor)<\/li>\n<li><strong>Jacob Scoggin, <\/strong><em>\u201cFinite Element Modeling of Phase Change Materials and Devices,\u201d <\/em>8\/2014 \u2013 8\/2019 (Advisor)<\/li>\n<li><strong>Raihan Khan, <\/strong><em>\u201c<\/em>Characterization and Mitigation of Resistance Drift in Amorphous Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> Devices at Cryogenic Temperatures<em>,\u201d<\/em> 1\/2016 \u2013 5\/2021 (Advisor)<\/li>\n<li><strong>Tashfique Kashem, <\/strong><em>\u201cModeling Charge Transport in Amorphous Ge2Sb2Te5 and Computational Analysis of Phase Change Memory Devices,\u201d<\/em> 9\/2018 \u2013 8\/2023 (Major Co-Advisor)<\/li>\n<li><strong>Saidjafarzoda Ilhom, <\/strong><em>\u201cAtomic Layer Deposition of Electronic Materials\u201d 8\/2018- 8\/2023 (Associate Advisor, Major Advisor: Necmi Biyikli)<\/em><\/li>\n<li><strong>Hasan Talukder, <\/strong><em>\u201cTemperature-Dependent Electrical Characterization of Narrow-Channel MOSFETs and Ge2Sb2Te5 Line Cells,\u201d<\/em> 1\/2018 \u2013 3\/2024 (Major Co-Advisor)<\/li>\n<\/ul>\n<p><strong>Current PhD Thesis Projects at UConn Nanoelectronics Laboratory<\/strong><\/p>\n<ul>\n<li><strong>Habeeb Mousa, <\/strong>\u201cOvonic Threshold Switches and Phase Change Memory Devices Based on ZnTe and GeSbTe Compounds\u201d 1\/2022 \u2013 Present (Major Co-Advisor)<\/li>\n<li><strong>Md Samzid Bin Hafiz,<\/strong> \u201cModeling Electronic Transport in Nanoscale Semiconductor Devices and Thin Films,\u201d 8\/2022 \u2013 Present (Major Co-Advisor)<\/li>\n<\/ul>\n<p><strong>Current MS Thesis Projects<\/strong> <em>(University of Connecticut, co-advised with Helena Silva)<\/em><\/p>\n<ul>\n<li>\n<div><b>Hanyu Jiang, <\/b><i>\u201cNanoscale Phase Change Memory Devices,\u201d <\/i><strong style=\"font-size: 1rem\">1\/2022 \u2013 Present (Major Co-Advisor)<\/strong><\/div>\n<\/li>\n<\/ul>\n<p><strong>Selected Publications<\/strong> <em>(UConn graduate and undergraduate students are in <strong>bold, <\/strong>PhD advisor <u>underlined<\/u>)<\/em><em> (<a href=\"https:\/\/drive.google.com\/drive\/folders\/1gq3ebV9axI_49gZk3P-Gi6h_IN0SO2Oe?usp=sharing\">Link for the PDFs for all publications)<\/a>)<\/em><\/p>\n<p><strong><em>Electro-Thermal Phenomena at Nanometer Scale<\/em><\/strong><\/p>\n<p><em>Contributions include experimental demonstration of substantial thermoelectric heat flow in extreme (non-equilibrium) conditions, such as at solid-liquid interfaces at nanometer scale, and formulation of the energy exchanges associated with minority carriers.<\/em><\/p>\n<ul>\n<li><strong> Bakan, N. Khan, A. Cywar, K. Cil, M. Akbulut,<\/strong> A. Gokirmak and H. Silva, \u2018Self-heating of silicon microwires: Crystallization and thermoelectric effects,\u2019 <em>J. of Materials Research<\/em>, 26: 1061-1071 (2011) (<em>Invited Feature Paper)<\/em>.<\/li>\n<li><strong> Bakan, N. Khan,<\/strong> H. Silva, A. Gokirmak, \u201cHigh-temperature thermoelectric transport at small scales: generation, transport and recombination of minority carriers,\u201d <em>Nature Publications, Scientific Reports 3, 2724, doi:10.1038\/srep02724 (2013)<\/em> <em>(Major contribution)<\/em><\/li>\n<li><strong> Muneer, G. Bakan,<\/strong> A.Gokirmak, H. Silva, \u201cIncorporation of GTR (generation\u2013transport\u2013recombination) in semiconductor simulations\u201d, <em>J. of Applied Physics, 129 (5), 055702 (2021) (Editor\u2019s Pick)<\/em><\/li>\n<\/ul>\n<p><strong><em>Experimental Studies on Phase Change Memory Materials and Devices<\/em><\/strong><\/p>\n<p><em>Contributions include experimental characterization of <\/em>Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub><em> phase change material from ~85 K to ~860 K, construction of high temperature Seebeck and Hall measurement setups, high-speed characterization techniques, and accelerating and stopping resistance drift with application of high electric fields at cryogenic temperatures.<\/em><\/p>\n<ul>\n<li><strong> Cil, F. Dirisaglik, M. Wennberg, A. King, A. Faraclas, M. Akbulut,<\/strong> Y. Zhu, C. Lam, A. Gokirmak, H. Silva, \u201cElectrical resistivity of liquid Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> nanostructures,\u201d <em>IEEE Trans. on Elect. Dev. 60, 1, 433-437 (2013).<\/em><\/li>\n<li><strong> Dirisaglik, G. Bakan, Z. Jurado, S. Muneer, M. Akbulut, J. Rarey, L. Sullivan, M. Wennberg, A. King, L. Zhang, R. Nowak,<\/strong> C. Lam, H. Silva, and A. Gokirmak, \u201cHigh speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift,\u201d <em>Nanoscale<\/em><em>, vol. 7, no. 40, pp. 16625\u201316630 (2015).<\/em><\/li>\n<li><strong> Adnane, N. Williams,<\/strong> H. Silva, and A. Gokirmak, \u201cHigh temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating,\u201d <em>AIP Rev. Sci. Instruments<\/em>, <em>vol. 86, no. 105119 (2015).<\/em><\/li>\n<li><strong> Adnane, K. Cil, F. Dirisaglik, A. Cywar,<\/strong> C. Lam, A. Gokirmak, H. Silva, &#8220;High Temperature Electrical Resistivity and Seebeck Coefficient of Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> Thin Films,&#8221; <em>J. Appl. Phys.,<\/em> <em>122<\/em><em>, 125104 (2017)<\/em>.<\/li>\n<li><strong> Muneer, J. Scoggin, F. Dirisaglik, L. Adnane, A. Cywar, G. Bakan, K. Cil, <\/strong>C. Lam, H. Silva, and A. Gokirmak, \u201cActivation Energy of Metastable Amorphous Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> from Room Temperature to Melt,\u201d <em>AIP Advances 8 (6), 065314 (2018).<\/em><\/li>\n<li><strong> Khan, F. Dirisaglik<\/strong>, A. Gokirmak, H. Silva, \u201cResistance drift in Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> phase change memory line cells at low temperatures and its response to photoexcitation,\u201d <em>Appl. Phys. Lett. 116, 253501 (2020).<\/em><\/li>\n<li><strong>Raihan Sayeed Khan, A Hasan Talukder, Faruk Dirisaglik<\/strong>, Helena Silva, Ali Gokirmak, <em>\u201cAccelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress,\u201d arXiv preprint arXiv:2002.12487 (2020)<\/em><\/li>\n<li><strong>Kashem, M.T.B., Scoggin, J., Woods, Z., Silva, H. and Gokirmak, A.<\/strong> &#8220;Modeling Reset, Set, and Read Operations in Nanoscale Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> Phase-Change Memory Devices Using Electric Field- and Temperature-Dependent Material Properties,&#8221; Phys. Status Solidi RRL, 17: 2200419 (2023) <a href=\"https:\/\/doi.org\/10.1002\/pssr.202200419\" aria-label=\"Digital Object Identifier\">https:\/\/doi.org\/10.1002\/pssr.202200419<\/a><\/li>\n<li style=\"font-weight: 400\"><strong>A. B. M. Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan, Faruk Dirisaglik, Ali Gokirmak and Helena Silva<\/strong>, \u201cResistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures,\u201d ECS Journal of Solid State Science and Technology, 13 025001 (2024) <a href=\"https:\/\/doi.org\/10.1149\/2162-8777\/ad2332\">https:\/\/doi.org\/10.1149\/2162-8777\/ad2332<\/a><\/li>\n<li><strong>A. Talukder<span class=\"al-author-delim\">, <\/span>M. Kashem<span class=\"al-author-delim\">, <\/span>M. Hafiz<span class=\"al-author-delim\">, <\/span>R. Khan<span class=\"al-author-delim\">, <\/span>F. Dirisaglik<span class=\"al-author-delim\">, <\/span>H. Silva<span class=\"al-author-delim\">, <\/span>A. Gokirmak, &#8220;<\/strong>Electronic transport in amorphous Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> phase-change memory line cells and its response to photoexcitation,&#8221; <em>Appl. Phys. Lett.<\/em> 24 June 2024; 124 (26): 263501. <a href=\"https:\/\/doi.org\/10.1063\/5.0196842\" target=\"_blank\" rel=\"noopener\">https:\/\/doi.org\/10.1063\/5.0196842<\/a><\/li>\n<\/ul>\n<p><strong><em>Construction of Computational Models for Phase Change and Ovonic Materials and Devices<\/em><\/strong><\/p>\n<p><em>Contributions include construction of temperature and electric-field dependent electro-thermal models integrated with dynamic materials models that capture nucleation, growth and amorphization during fabrication processes and device operation. We also demonstrated phase-change logic devices that utilize thermal cross-talk as a coupling mechanism using our computational models.<\/em><\/p>\n<ul>\n<li><strong>A. Faraclas, G. Bakan, N. Williams,<\/strong> A. Gokirmak and H. Silva, &#8220;Modeling of Thermoelectric Effects in Phase Change Memory Cells,&#8221; <em>IEEE Trans. on Electron Devices, 61, 2, 372-378 (2014).<\/em><\/li>\n<li><strong>Z. Woods<\/strong> and Ali Gokirmak, &#8220;Modeling of Phase Change Memory: Nucleation, Growth and Amorphization Dynamics during Set and Reset: Part I &#8211; Effective Media Approximation,&#8221; <em>Electron Devices, IEEE Trans.<\/em><em>, vol. 64, no. 11, pp. 4466-4471 (2017).<\/em><\/li>\n<li><strong>Z. Woods, J. Scoggin, A. Cywar, L. Adnane,<\/strong> and A. Gokirmak, &#8220;Modeling of Phase Change Memory: Nucleation, Growth and Amorphization Dynamics during Set and Reset: Part II \u2013 Discrete Grains,&#8221; <em>Electron Devices, IEEE Trans.<\/em><em>, vol. 64, no. 11, pp. 4472-4478 (2017).<\/em><\/li>\n<li><strong>J. Scoggin, R. Khan,<\/strong> H. Silva, and A. Gokirmak<sup> \u201c<\/sup>Modeling and Impacts of the Latent Heat of Phase Change and Specific Heat for Phase Change Materials,\u201d <em>Applied Physics Letters 112 (19), 193502 (2018).<\/em><\/li>\n<li><strong>J. Scoggin, Z. Woods,<\/strong> H. Silva, and A. Gokirmak \u201cModeling Heterogeneous Melting in Phase Change Memory Devices\u201d <em>Applied Physics Letters 114 (4), 043502 (2019).<\/em><\/li>\n<li><strong>J. Scoggin<\/strong>, H. Silva, A. Gokirmak, \u201cField dependent conductivity and threshold switching in amorphous chalcogenides\u2014Modeling and simulations of ovonic threshold switches and phase change memory devices\u201d, <em>J. of Applied Physics, 128 (23), 234503 (2020).<\/em><\/li>\n<li><strong>N. Kanan, R. S. Khan, Z. Woods<\/strong>, H. Silva, A. Gokirmak, \u201cPhase\u2010Change Logic via Thermal Cross\u2010Talk for Computation in Memory\u201d, <em>Physica Status Solidi (RRL) \u2013 Rapid Research Letters, 15 (3) 2000422 (2021).<\/em><\/li>\n<\/ul>\n<p><strong><em>Nanoscale Silicon Transistors<\/em><\/strong><\/p>\n<p><em>Contributions include a high-sensitivity measurement technique to characterize nano-scale field effect transistors by utilizing ambient noise to overcome the quantization errors (Stochastic Resonance), design and implementation of ultra-low leakage and threshold voltage controllable nanoscale MOSFETs which utilize an additional gate structure surrounding the active area. We also demonstrated these MOSFETs with silicon nitride field isolation for integration with micro\/nano-fluidic systems.<\/em><\/p>\n<ul>\n<li>A. Gokirmak and <u>S. Tiwari<\/u>, &#8220;Accumulated body ultranarrow channel silicon transistor with extreme threshold voltage tunability,&#8221; <em>Appl. Phys. Lett., vol. 91, pp. 243504 (2007).<\/em><\/li>\n<li>A. Gokirmak, H. Inaltekin and <u>S. Tiwari<\/u>, &#8220;Attofarad resolution capacitance\u2013voltage measurement of nanometer scale field effect transistors utilizing ambient noise,&#8221; <em>IOP Nanotechnology, vol. 20, pp. 335203 (2009).<\/em><\/li>\n<li><strong>M. Akbulut, <\/strong>H. Silva and A. Gokirmak, \u201cThree-Dimensional Computational Analysis of Accumulated Body MOSFETs\u201d<em>, Nanotechnology, IEEE Trans., vol. 14, no. 5, pp. 847-853 (2015).<\/em><\/li>\n<li><strong>M. B. Akbulut, F. Dirisaglik, A. Cywar, A. Faraclas,<\/strong> D. Pence, J. Patel, S. Steen, R. W. Nunes, H. Silva, A. Gokirmak, \u201cNanoscale Accumulated Body Si nMOSFETs,\u201d<em> Electron Devices, IEEE Trans.<\/em><em>, vol. 65, no. 4, pp. 1283 &#8211; 1289 (2018).<\/em><\/li>\n<\/ul>\n<p><strong>Teaching:<br \/>\n<\/strong><a href=\"http:\/\/www.facebook.com\/pages\/Ece2001w\/416519725039190?ref=hl\">Electric Circuits (ECE2001W) Facebook page<br \/>\n<\/a><a href=\"http:\/\/www.facebook.com\/UConnElectronics\">Electron Device Design and Characterization (ECE 4225 \/ 5225) Facebook page<\/a><\/p>\n<p><a href=\"https:\/\/drive.google.com\/file\/d\/1haW6LWLumyblLyvi-BhpKiKOfcgpWKps\/view?usp=share_link\" target=\"_blank\" rel=\"noopener\">CV<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Ali Gokirmak Professor Phone: (860) 486-9425 ali.gokirmak (at) uconn.edu Links Nanoelectronics Laboratory Nanoelectronics Laboratory Facebook Page Google Scholar Profile PDFs of Journal and Conference Publications Education: Ph.D. Electrical &amp; Computer Engineering, Cornell University, 2005 M.S. Electrical &amp; Computer Engineering, Cornell University, 2002 B.S. Physics, University of Maryland at College Park, 1998 B.S. Electrical Engineering, University [&hellip;]<\/p>\n","protected":false},"author":78,"featured_media":0,"parent":2,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-4","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/pages\/4","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/users\/78"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/comments?post=4"}],"version-history":[{"count":57,"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/pages\/4\/revisions"}],"predecessor-version":[{"id":48,"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/pages\/4\/revisions\/48"}],"up":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/pages\/2"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/ali-gokirmak\/wp-json\/wp\/v2\/media?parent=4"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}