{"id":115,"date":"2017-12-20T16:57:01","date_gmt":"2017-12-20T16:57:01","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=115"},"modified":"2026-04-07T19:03:41","modified_gmt":"2026-04-07T19:03:41","slug":"memristor","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/","title":{"rendered":"Memristor"},"content":{"rendered":"<div id=\"pl-115\"  class=\"panel-layout\" ><div id=\"pg-115-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-115-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-115-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-115-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-115-0-1-0\" class=\"so-panel widget widget_black-studio-tinymce widget_black_studio_tinymce panel-first-child panel-last-child\" data-index=\"1\" ><div class=\"textwidget\"><p><span style=\"font-size: 24pt\"><strong>Memristors<\/strong><\/span><\/p>\n<hr \/>\n<p>Our team at the University of Connecticut has developed and reported the underlying physics and chemistry of the different processes governing the operation of memristors. This has followed fabrication of individual memristors and cross bar structures using ZnO as the material platform. Recent applications include the demonstration of 1-bit memristors PUF and implication logic.<\/p>\n<p style=\"text-align: center\"><span style=\"font-size: 14pt\"><strong>Theory\/Model<\/strong><\/span><\/p>\n<ul>\n<li>Transient circuit model of memristors<br \/>\nA Mazady, M Anwar<br \/>\nInternational Journal of High Speed Electronics and Systems 24 (03n04), 1520007<\/li>\n<li>DC Circuit Model of TiO<sub>2<\/sub>-based Memristors<br \/>\nA Mazady, M Anwar<br \/>\nInternational Journal of High Speed Electronics and Systems 24 (03n04), 1550004<\/li>\n<li>Memristor: Part I\u2014The underlying physics and conduction mechanism<br \/>\nA Mazady, M Anwar<br \/>\nIEEE Transactions on Electron Devices 61 (4), 1054-1061<\/li>\n<li>Memristor: part II\u2013DC, transient, and RF analysis<br \/>\nA Mazady, M Anwar<br \/>\nIEEE Transactions on Electron Devices 61 (4), 1062-1070<\/li>\n<li>Transient analysis of memristors<br \/>\nA Mazady, M Anwar<br \/>\nLester Eastman Conference on High Performance Devices (LEC), 2012, 1-4Measurements<\/li>\n<li>DC circuit model of a memristor<br \/>\nA Mazady, M Anwar<br \/>\nSemiconductor Device Research Symposium (ISDRS), 2011 International, 1-2<\/li>\n<\/ul>\n<p style=\"text-align: center\"><span style=\"font-size: 14pt\"><strong>Applications<\/strong><\/span><\/p>\n<ul>\n<li>Memristor puf\u2014a security primitive: Theory and experiment<br \/>\nA Mazady, MT Rahman, D Forte, M Anwar<br \/>\nIEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (222 - 229) 2015<\/li>\n<\/ul>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Memristors Our team at the University of Connecticut has developed and reported the underlying physics and chemistry of the different processes governing the operation of memristors. This has followed fabrication of individual memristors and cross bar structures using ZnO as the material platform. Recent applications include the demonstration of 1-bit memristors PUF and implication logic. [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-noside-menu.php","meta":{"footnotes":""},"class_list":["post-115","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/115","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=115"}],"version-history":[{"count":15,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/115\/revisions"}],"predecessor-version":[{"id":371,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/115\/revisions\/371"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=115"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}