{"id":194,"date":"2018-10-17T19:45:52","date_gmt":"2018-10-17T19:45:52","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=194"},"modified":"2026-04-07T19:03:41","modified_gmt":"2026-04-07T19:03:41","slug":"high-electron-mobility-transistors-hemts","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/","title":{"rendered":"High Electron Mobility Transistors (HEMTs)"},"content":{"rendered":"<div id=\"pl-194\"  class=\"panel-layout\" ><div id=\"pg-194-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-194-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-194-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-194-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-194-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><strong><span style=\"font-size: 24pt\">High Electron Mobility Transistors (HEMTs)<\/span><\/strong><\/p>\n<hr \/>\n<p>Modern communications requires the development of advanced electronics with unity gain current cutoff in hundreds of GHz. III-V based low noise amplifiers to III-Nitride based high power electronics serves as the backbone of our communication and defense industries.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-183 alignleft\" src=\"http:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/HEMTs-300x179.png\" alt=\"\" width=\"437\" height=\"261\" srcset=\"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/HEMTs-300x179.png 300w, https:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/HEMTs.png 306w\" sizes=\"auto, (max-width: 437px) 100vw, 437px\" \/><\/p>\n<p><strong><span style=\"font-size: 24pt\">\u00a0\u00a0\u00a0\u00a0\u00a0<\/span><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><strong><span style=\"font-size: 24pt\">III-V HEMTs<\/span><\/strong><\/p>\n<ul>\n<li>Schottky barrier height in GaN\/AlGaN heterostructures, AFM Anwar, EW Faraclas,\u00a0Solid-State Electronics 50 (6), 1041-1045, 2006<\/li>\n<li>AlGaN\/GaN HEMTs: Experiment and simulation of DC characteristics, EW Faraclas, AFM Anwar,\u00a0Solid-state electronics 50 (6), 1051-1056, 2006<\/li>\n<li>Bias induced strain in\u00a0heterojunction field effect transistors and its implications, AFM Anwar, RT Webster, KV Smith,\u00a0Applied physics letters 88 (20), 203510, 2006<\/li>\n<li>Response to \u201cComment on \u2018Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors\u2019\u201d[Appl. Phys. Lett. 86, 016101 (2005)], AFM Anwar, SS Islam, RT Webster,\u00a0Applied Physics Letters 86 (1), 016101, 2005<\/li>\n<li>Spice model of AlGaN\/GaN hemts and simulation of VCO and power amplifier,\u00a0 SS Islam, AFM Anwar,\u00a0High Performance Devices, 229-235, 2005<\/li>\n<li>Dependence of RF performance of GaN\/AlGaN HEMTs upon AlGaN barrier layer variation, E Faraclas, RT Webster, G Brandes, AFM Anwar,\u00a0High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference\u00a0\u20262004<\/li>\n<li>REPORT DOCUMENTATlON PAGE om\u00e9\u2019Wf\ufb01\u2019imtaa, SS Islam, AFM Anwar, RTW gATASK NUMBER,\u00a0IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (6), 2004<\/li>\n<li>A physics-based frequency dispersion model of GaN MESFETs, SS Islam, AFM Anwar, RT Webster,\u00a0IEEE Transactions on electron devices 51 (6), 846-853, 2004<\/li>\n<li>Self-heating and trapping effects on the RF performance of GaN MESFETs, SS Islam, AFM Anwar,\u00a0IEEE transactions on microwave theory and techniques 52 (4), 1229-1236, 2004<\/li>\n<li>Carrier trapping and current collapse mechanism in GaN metal\u2013semiconductor field-effect transistors, AFM Anwar, SS Islam, RT Webster,\u00a0Applied physics letters 84 (11), 1970-1972, 2004<\/li>\n<li>Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN\/GaN HFETs, SS Islam, MN Rahman, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2003 International, 441-442, 2003<\/li>\n<li>A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs, SS Islam, AFM Anwar, RT Webster,\u00a0Device Research Conference, 2003, 69-70, 2003<\/li>\n<li>Analysis of RF performances of GaN MESFETs including self-heating and trapping effects, SS Islam, AFM Anwar,\u00a0Microwave Symposium Digest, 2003 IEEE MTT-S International 1, 459-462, 2003<\/li>\n<li>A self-consistent model for small-signal parameters and noise performance of InAlAs\/InGaAs\/InAlAs\/InP HEMTs, KW Liu, AFM Anwar,\u00a0Solid-State Electronics 47 (5), 763-768, 2003<\/li>\n<li>Frequency and temperature dependence of gain compression in GaN\/AlGaN HEMT amplifiers,\u00a0A Ahmed, SS Islam, AFM Anwar,\u00a0Solid-State Electronics 47 (2), 339-344, 2003<\/li>\n<li>Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects, SS Islam, AFM Anwar,\u00a0IEEE transactions on microwave theory and techniques 50 (11), 2474-2479, 2002<\/li>\n<li>Frequency dependence of GaN\/AlGaN HEMT amplifier using time-domain analysis, AFM Anwar, SS Islam,\u00a0Solid-State Electronics 46 (10), 1507-1511, 2002<\/li>\n<li>High frequency GaN\/AlGaN HEMT class-E power amplifier, SS Islam, AFM Anwar,\u00a0Solid-State Electronics 46 (10), 1621-1625, 2002<\/li>\n<li>Thermal and trapping effects in GaN-based MESFETs, SS Islam, AFM Anwar,\u00a0High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026, 2002<\/li>\n<li>Design of GaN\/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar,\u00a0High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026, 2002<\/li>\n<li>Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series, SS Islam, AFM Anwar,\u00a0Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354, 2002<\/li>\n<li>Temperature-dependent nonlinearities in GaN\/AlGaN HEMTs, SS Islam, AFM Anwar,\u00a0IEEE Transactions on Electron Devices 49 (5), 710-717, 2002<\/li>\n<li>Temperature dependent transport parameters in short GaN structures, AFM Anwar, S Wu, RT Webster,\u00a0physica status solidi (b) 228 (2), 575-578, 2001<\/li>\n<li>A temperature-dependent nonlinear analysis of GaN\/AlGaN HEMTs using Volterra series, A Ahmed, SS Islam, AFM Anwar,\u00a0IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524, 2001<\/li>\n<li>Temperature dependence of intermodulation and linearity in GaN based devices, A Ahmed, SS Islam, AFM Anwar,\u00a0Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers\u00a0\u2026, 2001<\/li>\n<li>Temperature dependent transport properties in GaN, Al\/sub x\/Ga\/sub 1-x\/N, and In\/sub x\/Ga\/sub 1-x\/N semiconductors AFM Anwar, S Wu, RT Webster,\u00a0IEEE Transactions on Electron devices 48 (3), 567-572, 2001<\/li>\n<li>RF performance of GaN\/AlGaN HEMT amplifier, AFM Anwar, SS Islam,\u00a0Semiconductor Device Research Symposium, 2001 International, 209-212, 2001<\/li>\n<li>Gain compression in GaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2001 International, 205-208, 2001<\/li>\n<li>An analytical model of small-signal parameters for GaAs\/AlGaAs inverted high electron mobility transistors, KW Liu, AFM Anwar,\u00a0Microelectronics journal 32 (1), 85-88, 2001<\/li>\n<li>GaN\/AlGaN HEMT microwave class-e power amplifier, SS Islam, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2001 International, 446-449, 23001, 2001<\/li>\n<li>Impact ionization in InAlAs\/InGaAs\/InAlAs HEMT's, RT Webster, S Wu, AFM Anwar,\u00a0IEEE Electron Device Letters 21 (5), 193-195, 2000<\/li>\n<li>A theoretical determination of impact ionization induced gate current in InP HEMTs, S Wu, AFM Anwar,\u00a0High Performance Devices, 2000. Proceedings. 2000 IEEE\/Cornell Conference on\u00a0\u2026, 2000<\/li>\n<li>The small-signal parameters and noise characterization for inverted GaAs\/AlGaAs high electron mobility transistors, KW Liu, AFM Anwar,\u00a0Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1\u00a0\u2026, 2000<\/li>\n<li>A THEORETICAL DETERIVHNATION OF] 1V [PACT IONIZATION INDUCED GCINIP HEMT, S Wu, AFM Anwar,\u00a0 Proceedings, 2000 IEEE\/Cornell Conference on High Performance Devices\u00a0\u2026, 2000<\/li>\n<li>Physics-based intrinsic model for AlGaN\/GaN HEMTs, S Wu, RT Webster, AFM Anwar,\u00a0Materials Research Society Internet Journal of Nitride Semiconductor\u00a0\u2026, 1999<\/li>\n<li>On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb\/InGaAs\/AlGaAsSb QW's, AFM Anwar, RT Webster,\u00a0IEEE Transactions on Electron Devices 45 (6), 1170-1175, 1999<\/li>\n<li>Impact Ionization in InP-based HEMTs, RT Webster, AFM Anwar, S Wu,\u00a0Proceedings, 172, 1997<\/li>\n<li>New method of computing band offsets and its application to AlGaN\/GaN heterostructures, RT Webster, AFM Anwar,\u00a0MRS Online Proceedings Library Archive 482, 1997<\/li>\n<li>An analytical noise evaluation for super low-noise InAlAs\/InGaAs\/InAlAs\/InP HEMTs, KW Liu, AFM Anwar, CJ Wu,\u00a0Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370, 1996<\/li>\n<li>An analytical characterization for IMODFETs,\u00a0KW Liu, AFM Anwar,\u00a0Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 371-375, 1996<\/li>\n<li>A charge control and current-voltage model for inverted MODFET's, AFM Anwar, KW Liu, AN Khondker,\u00a0IEEE Transactions on Electron Devices 42 (4), 586-590, 1995<\/li>\n<li>A noise model for high electron mobility transistors, AFM Anwar, KW Liu,\u00a0IEEE Transactions on Electron Devices 41 (11), 2087-2092, 1994<\/li>\n<li>A self-consistent calculation of the small signal parameters for AlGaAs\/GaAs and AlGaAs\/InGaAs\/GaAs HEMTs, KW Liu, AFM Anwar,\u00a0Solid-state electronics 37 (1), 51-54, 1994<\/li>\n<li>Noise modeling for\u00a0<em>W<\/em>\u2010band pseudomorphic InGaAs HEMT\u2019s, KW Liu, AFM Anwar, RD Caroll,\u00a0AIP Conference Proceedings 285 (1), 280-283, 1993<\/li>\n<li>Noise properties of AlGaAs\/GaAs MODFET's, AFM Anwar, KW Liu,\u00a0IEEE Transactions on Electron Devices 40 (6), 1174-1176, 1993<\/li>\n<li>Noise Analysis of AlGaAs\/InGaAs\/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan,\u00a0ISDRS 1, 199 (1993)<\/li>\n<li>Approximate analytic current-voltage calculations for MODFETs, AN Khondker, AFM Anwar,\u00a0IEEE Transactions on Electron Devices 37 (1), 314-317, 1990<\/li>\n<li>On modelling of quantum well devices., AFM Anwar, 1989<\/li>\n<li>Envelope function description of double\u2010heterojunction quantum wells, AFM Anwar, AN Khondker, Journal of applied physics 62 (10), 4200-4203, 1987<\/li>\n<li>Analytical models for AlGaAs\/GaAs heterojunction quantum wells,\u00a0AN Khondker, AFM Anwar,\u00a0Solid-state electronics 30 (8), 847-852, 1987<\/li>\n<li>Charge control mechanism in MODFET's: a theoretical analysis, AN Khondker, AFM Anwar, MA Islam, L Limoncelli, D Wilson,\u00a0IEEE transactions on electron devices 33 (11), 1825-1826, 1986<\/li>\n<\/ul>\n<p><strong><span style=\"font-size: 24pt\">Metamorphic HEMTs<\/span><\/strong><\/p>\n<ul>\n<li>Noise in Metamorphic AlGaAsSb\/InGaAs\/AlGaAsSb HEMTs, RT Webster, AFM Anwar,\u00a0Solid-State Electronics 48 (10-11), 2007-2011, 2004<\/li>\n<li>AlGaAsSb\/InGaAs\/AlGaAsSb metamorphic HEMTs, RT Webster, AFM Anwar, JL Heaton, K Nichols, S Duncan,\u00a0High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026, 2002<\/li>\n<li>An envelope function description of the quantum well formed in Al<em><sub>x<\/sub><\/em>Ga<sub>1\u2212<em>x<\/em><\/sub>As<em><sub>y<\/sub><\/em>Sb<sub>1\u2212<em>y<\/em><\/sub>\/InAs\/Al<em><sub>x<\/sub><\/em>Ga<sub>1\u2212<em>x<\/em><\/sub>As<em><sub>y<\/sub><\/em>Sb<sub>1\u2212<em>y<\/em><\/sub>\u00a0heterostructures,\u00a0AFM Anwar, RT Webster,\u00a0Journal of applied physics 80 (12), 6827-6830, 1996<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p><strong><span style=\"font-size: 24pt\">III-Nitride HFETs<\/span><\/strong><\/p>\n<p><strong><span style=\"font-size: 24pt\">Noise and Power Performance<\/span><\/strong><\/p>\n<ul>\n<li>Spice model of AlGaN\/GaN hemts and simulation of VCO and power amplifier,\u00a0 SS Islam, AFM Anwar,\u00a0High Performance Devices, 229-235, 2005<\/li>\n<li>Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar,\u00a0Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on\u00a0\u2026, 2004<\/li>\n<li>Noise in Metamorphic AlGaAsSb\/InGaAs\/AlGaAsSb HEMTs, RT Webster, AFM Anwar,\u00a0Solid-State Electronics 48 (10-11), 2007-2011, 2004<\/li>\n<li>Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar,\u00a0IEEE transactions on microwave theory and techniques 51 (3), 677-683, 2003<\/li>\n<li>Frequency and temperature dependence of gain compression in GaN\/AlGaN HEMT amplifiers,\u00a0A Ahmed, SS Islam, AFM Anwar,\u00a0Solid-State Electronics 47 (2), 339-344, 2003<\/li>\n<li>Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects, SS Islam, AFM Anwar,\u00a0IEEE transactions on microwave theory and techniques 50 (11), 2474-2479, 2002<\/li>\n<li>Design of GaN\/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar,\u00a0High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026, 2002<\/li>\n<li>Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series, SS Islam, AFM Anwar,\u00a0Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354, 2002<\/li>\n<li>Temperature-dependent nonlinearities in GaN\/AlGaN HEMTs, SS Islam, AFM Anwar,\u00a0IEEE Transactions on Electron Devices 49 (5), 710-717, 2002<\/li>\n<li>A temperature-dependent nonlinear analysis of GaN\/AlGaN HEMTs using Volterra series, A Ahmed, SS Islam, AFM Anwar,\u00a0IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524, 2001<\/li>\n<li>Temperature dependence of intermodulation and linearity in GaN based devices, A Ahmed, SS Islam, AFM Anwar,\u00a0Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers\u00a0\u2026, 2001<\/li>\n<li>Gain compression in GaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2001 International, 205-208, 2001<\/li>\n<li>GaN\/AlGaN HEMT microwave class-e power amplifier, SS Islam, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2001 International, 446-449, 23001, 2001<\/li>\n<li>The small-signal parameters and noise characterization for inverted GaAs\/AlGaAs high electron mobility transistors, KW Liu, AFM Anwar,\u00a0Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1\u00a0\u2026, 2000<\/li>\n<li>Nonlinearity Analysis of HBTs,\u00a0SY Chiu, AFM Anwar,\u00a0Proceedings, 97, 1999<\/li>\n<li>An analytical noise evaluation for super low-noise InAlAs\/InGaAs\/InAlAs\/InP HEMTs, KW Liu, AFM Anwar, CJ Wu,\u00a0Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370, 1996<\/li>\n<li>Noise modeling for\u00a0<em>W<\/em>\u2010band pseudomorphic InGaAs HEMT\u2019s, KW Liu, AFM Anwar, RD Caroll,\u00a0AIP Conference Proceedings 285 (1), 280-283, 1993<\/li>\n<li>Noise properties of AlGaAs\/GaAs MODFET's, AFM Anwar, KW Liu,\u00a0IEEE Transactions on Electron Devices 40 (6), 1174-1176, 1993<\/li>\n<li>Noise Analysis of AlGaAs\/InGaAs\/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan,\u00a0ISDRS 1, 199 (1993)<\/li>\n<\/ul>\n<p><strong><span style=\"font-size: 24pt\">Circuits<\/span><\/strong><\/p>\n<ul>\n<li>Design of GaN\/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar,\u00a0High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026, 2002<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>High Electron Mobility Transistors (HEMTs) Modern communications requires the development of advanced electronics with unity gain current cutoff in hundreds of GHz. III-V based low noise amplifiers to III-Nitride based high power electronics serves as the backbone of our communication and defense industries. \u00a0\u00a0\u00a0\u00a0\u00a0 &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; III-V HEMTs Schottky barrier [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-noside-menu.php","meta":{"footnotes":""},"class_list":["post-194","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/194","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=194"}],"version-history":[{"count":6,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/194\/revisions"}],"predecessor-version":[{"id":404,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/194\/revisions\/404"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=194"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}