{"id":198,"date":"2018-10-17T19:47:05","date_gmt":"2018-10-17T19:47:05","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=198"},"modified":"2026-04-07T19:03:41","modified_gmt":"2026-04-07T19:03:41","slug":"heterojunction-bipolar-transistors-hbts","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/","title":{"rendered":"Heterojunction Bipolar Transistors (HBTs)"},"content":{"rendered":"<div id=\"pl-198\"  class=\"panel-layout\" ><div id=\"pg-198-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-198-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-198-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-198-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-198-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><span style=\"font-size: 24pt\">Heterojunction Bipolar Transistors (HBTs)<\/span><\/p>\n<hr \/>\n<p><strong>Publications:<\/strong><\/p>\n<ul>\n<li>Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004<em>.<\/em>, Brisbane, Qld., 2004, pp. 129-132<\/li>\n<li>Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683<\/li>\n<li>A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors, AFM Anwar, MM Jahan, IEEE Transactions on Electron Devices 50 (2), 272-277<\/li>\n<li>Base transit time in abrupt GaN\/InGaN\/GaN HBT's, SY Chiu, AFM Anwar, S Wu, IEEE Transactions on Electron Devices 47 (4), 662-666<\/li>\n<li>High-frequency microwave characteristics of HBTs, SY Chiu, AFM Anwar, SPIE proceedings series, 546-549<\/li>\n<li>Effect of surface recombination on the Early voltage in HBTs, SY Chiu, AFM Anwar, Semiconductor science and technology 14 (9), 840<\/li>\n<li>Nonlinearity Analysis of HBTs, SY Chiu, AFM Anwar, Proceedings, 97<\/li>\n<li>Base transit time in abrupt GaN\/InGaN\/GaN and AlGaN\/GaN\/AlGaN HBTs, SY Chiu, AFM Anwar, S Wu, Materials Research Society Internet Journal of Nitride Semiconductor Res. 4S1, G6.7 (1999)<\/li>\n<li>Effect of Surface Recombination on HBT Performance, SY Chhi, AFM Anwar, Proceedings: 1997 International Semiconductor Device Research Symposium, December 10-13, 1997, Omni Charlottesville Hotel<\/li>\n<li>An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors, MM Jahan, AFM Anwar, Solid-State Electronics 39 (6), 941-948<\/li>\n<li>An analytical expression for base transit time in an exponentially doped base bipolar transistor, MM Jahan, AFM Anwar, Solid-State Electronics 39 (1), 133-136<\/li>\n<li>Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Electron Device Letters 16 (12), 551-553<\/li>\n<li>Early voltage in double heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Transactions on Electron Devices 42 (11), 2028-2029<\/li>\n<li>Noise resistance of heterojunction bipolar transistors, AFM Anwar, MK Jahan, Proceedings IEEE\/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1995, pp. 296-302<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Heterojunction Bipolar Transistors (HBTs) Publications: Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., Brisbane, Qld., 2004, pp. 129-132 Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683 [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-noside-menu.php","meta":{"footnotes":""},"class_list":["post-198","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/198","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=198"}],"version-history":[{"count":5,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/198\/revisions"}],"predecessor-version":[{"id":424,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/198\/revisions\/424"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=198"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}