{"id":204,"date":"2018-10-17T19:50:01","date_gmt":"2018-10-17T19:50:01","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=204"},"modified":"2026-04-07T19:03:41","modified_gmt":"2026-04-07T19:03:41","slug":"noise-in-semiconductor-devices","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/","title":{"rendered":"Noise in Semiconductor Devices"},"content":{"rendered":"<div id=\"pl-204\"  class=\"panel-layout\" ><div id=\"pg-204-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-204-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-204-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-204-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-204-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><span style=\"font-size: 24pt\">Noise in Semiconductor Devices\u00a0<\/span><\/p>\n<p><span style=\"color: #000000;font-family: Calibri\">High frequency noise is HEMTs and HBTs are formulated. The formulations reflect a unique blend of quantum nature of carriers and stochastic processes.<\/span><\/p>\n<hr \/>\n<p><strong>Publications:<\/strong><\/p>\n<ul>\n<li>Spice model of AlGaN\/GaN hemts and simulation of VCO and power amplifier, SS Islam, AFM Anwar, High Performance Devices, 229-235<\/li>\n<li>Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., Brisbane, Qld., 2004, pp. 129-132.<\/li>\n<li>Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683<\/li>\n<li>Frequency and temperature dependence of gain compression in GaN\/AlGaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Solid-State Electronics 47 (2), 339-344<\/li>\n<li>Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/n-channel HEMTs and p-channel FETs, KW Liu, AFM Anwar, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240<\/li>\n<li>Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Electron Device Letters 16 (12), 551-553<\/li>\n<li>Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/FETs, AFM Anwar, KW Liu, VP Kesan, IEEE Transactions on Electron Devices 42 (10), 1841-1846<\/li>\n<li>Noise resistance of heterojunction bipolar transistors, AFM Anwar, MK Jahan, Proceedings IEEE\/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1995, pp. 296-302<\/li>\n<li>Shot noise in double barrier quantum structures, MM Jahan, AFM Anwar, Solid-state electronics 38 (2), 429-432<\/li>\n<li>A noise model for high electron mobility transistors, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 41 (11), 2087-2092<\/li>\n<li>Noise temperature modeling of AlGaAs\/GaAs and AlGaAs\/InGaAs\/GaAs HEMTs, AFM Anwar, KW Liu, Solid-state electronics 37 (9), 1585-1588<\/li>\n<li>DC, small\u2010signal parameters and noise performance for\u00a0<em>SiGe<\/em>\/<em>Si<\/em> FETs, AFM Anwar, KW Liu, MM Jahan, VP Kesan, AIP Conference Proceedings 285 (1), 354-357<\/li>\n<li>Noise modeling for\u00a0<em>W<\/em>\u2010band pseudomorphic InGaAs HEMT\u2019s, KW Liu, AFM Anwar, RD Caroll, AIP Conference Proceedings 285 (1), 280-283<\/li>\n<li>Study of shot noise in a double barrier resonant tunneling structure, MM Jahan, AFM Anwar, Proceedings of IEEE\/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1993, pp. 189-193<\/li>\n<li>Noise properties of AlGaAs\/GaAs MODFET's, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 40 (6), 1174-1176<\/li>\n<li>Noise Analysis of AlGaAs\/InGaAs\/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan, ISDRS 1, 199<\/li>\n<li>Noise in\u00a0<em>Si \/ Si<\/em>\u00a0<sub>1-<\/sub>\u00a0<em><sub>x<\/sub><\/em><sub>\u00a0<\/sub><em>Ge<\/em>\u00a0<em><sub>x<\/sub><\/em><sub>\u00a0<\/sub>n-channel HEMTs and p-channel FETs, AFM Anwar, KW Liu, MM Jahan, Simulation of Semiconductor Devices and Processes, 273-276<\/li>\n<li>Study of localization using quantum-mechanical tunneling time and modeling of shot noise, AFM Anwar, KW Liu, MM Jahan, Quantum Well and Superlattice Physics IV 1675, 376-388<\/li>\n<\/ul>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Noise in Semiconductor Devices\u00a0 High frequency noise is HEMTs and HBTs are formulated. The formulations reflect a unique blend of quantum nature of carriers and stochastic processes. Publications: Spice model of AlGaN\/GaN hemts and simulation of VCO and power amplifier, SS Islam, AFM Anwar, High Performance Devices, 229-235 Noise Characterization for Heterojunction Bipolar Transistors (HBTs), [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-noside-menu.php","meta":{"footnotes":""},"class_list":["post-204","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/204","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=204"}],"version-history":[{"count":7,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/204\/revisions"}],"predecessor-version":[{"id":427,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/204\/revisions\/427"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=204"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}