{"id":22,"date":"2017-12-11T17:06:17","date_gmt":"2017-12-11T17:06:17","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=22"},"modified":"2019-06-20T15:50:35","modified_gmt":"2019-06-20T15:50:35","slug":"publications","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/publications\/","title":{"rendered":"PUBLICATIONS"},"content":{"rendered":"

Journal Articles:<\/span><\/span><\/p>\n

Title<\/strong><\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0 \u00a0 \u00a0\u00a0\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0Cited by<\/strong><\/span>\u00a0 \u00a0\u00a0 \u00a0 Year<\/strong><\/span><\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Structural and optical properties of high magnesium content wurtzite-Zn1\u2212x<\/sub>Mgx<\/sub>O nanowires<\/a><\/p>\n
A Rivera, A Mazady, JW Zeller, AK Sood, T Manzur, M Anwar<\/div>\n
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 37 (2\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2019<\/span><\/td>\n<\/tr>\n
Exploiting memristors for compressive sampling of sensory signals<\/a><\/p>\n
F Qian, Y Gong, G Huang, M Anwar, L Wang<\/div>\n
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 1-12<\/div>\n<\/td>\n
2<\/a><\/td>\n2018<\/span><\/td>\n<\/tr>\n
High temperature electrical resistivity and Seebeck coefficient of Ge2<\/sub>Sb2<\/sub>Te5<\/sub>\u00a0thin films<\/a><\/p>\n
L Adnane, F Dirisaglik, A Cywar, K Cil, Y Zhu, C Lam, AFM Anwar, …<\/div>\n
Journal of Applied Physics 122 (12), 125104<\/div>\n<\/td>\n
5<\/a><\/td>\n2017<\/span><\/td>\n<\/tr>\n
A survey on GaN-based devices for terahertz photonics
\n<\/a>K Ahi, M Anwar
\nWide Bandgap Power Devices and Applications 9957, 99570A<\/td>\n		4<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
Modeling of terahertz images based on x-ray images: a novel approach for verification of terahertz images and identification of objects with fine details beyond terahertz\u00a0\u2026<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry\u00a0\u2026<\/div>\n<\/td>\n
29<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
Developing terahertz imaging equation and enhancement of the resolution of terahertz images using deconvolution<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry\u00a0\u2026<\/div>\n<\/td>\n
35<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
Advanced terahertz techniques for quality control and counterfeit detection<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry\u00a0\u2026<\/div>\n<\/td>\n
34<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
Terahertz Techniques: Novel Non-destructive Tests for Detection of Counterfeit Electronic Components<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Connect. Symp. Microelectron. Optoelectron<\/div>\n<\/td>\n
5<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
A novel mathematical approach for converting X-Ray images to terahertz images<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Connect. Symp. Microelectron. Optoelectron.<\/div>\n<\/td>\n
3<\/a><\/td>\n2016<\/span><\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense<\/a><\/p>\n
MF Anwar, TW Crowe, T Manzur<\/div>\n
Proc. of SPIE Vol 9856, 985601-1<\/div>\n<\/td>\n
<\/td>\n2016<\/span><\/td>\n<\/tr>\n
Transient circuit model of memristors<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
International Journal of High Speed Electronics and Systems 24 (03n04), 1520007<\/div>\n<\/td>\n
1<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Energy Harvesting Leveraging Piezoelectric Property of ZnO Nanorods<\/a><\/p>\n
A Rivera, A Mazady, M Anwar<\/div>\n
International Journal of High Speed Electronics and Systems 24 (03n04), 1520013<\/div>\n<\/td>\n
1<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
DC Circuit Model of TiO2<\/sub>-based Memristors<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
International Journal of High Speed Electronics and Systems 24 (03n04), 1550004<\/div>\n<\/td>\n
<\/td>\n2015<\/span><\/td>\n<\/tr>\n
Optimized Growth of ZnO Nanowires and Nanorods Using MOCVD<\/a><\/p>\n
A Rivera, A Mazady, M Anwar<\/div>\n
International Journal of High Speed Electronics and Systems 24 (03n04), 1520014<\/div>\n<\/td>\n
<\/td>\n2015<\/span><\/td>\n<\/tr>\n
ZnMgO\/ZnO Core-Shell Structures for Gas Sensing<\/a><\/p>\n
A Rivera, A Mazady, M Anwar<\/div>\n
International Journal of High Speed Electronics and Systems 24 (03n04), 1550010<\/div>\n<\/td>\n
<\/td>\n2015<\/span><\/td>\n<\/tr>\n
Memristor puf\u2014a security primitive: Theory and experiment<\/a><\/p>\n
A Mazady, MT Rahman, D Forte, M Anwar<\/div>\n
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2\u00a0\u2026<\/div>\n<\/td>\n
38<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Terahertz characterization of electronic components and comparison of terahertz imaging with x-ray imaging techniques<\/a><\/p>\n
K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems IX: Advanced Applications in\u00a0\u2026<\/div>\n<\/td>\n
35<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Growth dependent optical properties of ZnMgO at THz frequencies<\/a><\/p>\n
A Rivera, A Mazady, K Ahi, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems IX: Advanced Applications in\u00a0\u2026<\/div>\n<\/td>\n
5<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Co-axial core\u2013shell ZnMgO\/ZnO NWs<\/a><\/p>\n
A Rivera, A Mazady, M Anwar<\/div>\n
Solid-State Electronics 104, 126-130<\/div>\n<\/td>\n
7<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Authentication of electronic components by time domain THz Techniques<\/a><\/p>\n
K Ahi, N Asadizanjani, M Tehranipoor, AFM Anwar<\/div>\n
Connect. Symp. Microelectron. Optoelectron., Bridgeport, Connecticut, USA<\/div>\n<\/td>\n
8<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
THZ Techniques: A Promising Platform for Authentication of Electronic Components<\/a><\/p>\n
K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar<\/div>\n
CHASE Conf. Trust. Syst. Supply Chain Assur., Storrs, Connecticut, USA<\/div>\n<\/td>\n
8<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense<\/a><\/p>\n
MF Anwar, TW Crowe, T Manzur<\/div>\n
Proc. of SPIE Vol 9483, 948301-1<\/div>\n<\/td>\n
<\/td>\n2015<\/span><\/td>\n<\/tr>\n
A novel approach for enhancement of the resolution of terahertz measurements for quality control and counterfeit detection<\/a><\/p>\n
K Ahi, M Anwar<\/div>\n
Diminishing Manufacturing Sources and Material Shortages (DMSMS)<\/div>\n<\/td>\n
10<\/a><\/td>\n2015<\/span><\/td>\n<\/tr>\n
Optical parameters of Zn1\u2212 xMgxO nanowires in THz regime<\/a><\/p>\n
A Mazady, A Rivera, M Anwar<\/div>\n
Solid-State Electronics 101, 8-12<\/div>\n<\/td>\n
3<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Memristor: Part I\u2014The underlying physics and conduction mechanism<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
IEEE Transactions on Electron Devices 61 (4), 1054-1061<\/div>\n<\/td>\n
17<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Memristor: part II\u2013DC, transient, and RF analysis<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
IEEE Transactions on Electron Devices 61 (4), 1062-1070<\/div>\n<\/td>\n
13<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Special Section Guest Editorial: Terahertz Physics and Applications<\/a><\/p>\n
MF Anwar, JS Melinger, E Ozbay, M Tonouchi<\/div>\n
Optical Engineering 53 (3), 031201<\/div>\n<\/td>\n
1<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Effects of Annealing on Structural and Optical Properties of ZnO Nanowires<\/a><\/p>\n
A Mazady, A Rivera, M Anwar<\/div>\n
MRS Online Proceedings Library Archive 1675, 21-25<\/div>\n<\/td>\n
<\/td>\n2014<\/span><\/td>\n<\/tr>\n
Low Temperature Growth of Horizontal ZnO Nanorods<\/a><\/p>\n
A Rivera, A Mazady, M Anwar<\/div>\n
MRS Online Proceedings Library Archive 1707<\/div>\n<\/td>\n
1<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Optimization of Annealing Conditions for ZnO-based Thin Films Grown Using MOCVD<\/a><\/p>\n
A Mazady, A Rivera, M Anwar<\/div>\n
MRS Online Proceedings Library Archive 1675, 3-8<\/div>\n<\/td>\n
1<\/a><\/td>\n2014<\/span><\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense<\/a><\/p>\n
M Anwar, TW Crowe, T Manzur<\/div>\n
Proc. of SPIE Vol 9102, 910201-1<\/div>\n<\/td>\n
<\/td>\n2014<\/span><\/td>\n<\/tr>\n
ZnMgO solar blind detectors: from material to systems<\/a><\/p>\n
MF Anwar, A Rivera, A Mazady, HC Chou, JW Zeller, AK Sood<\/div>\n
Infrared Sensors, Devices, and Applications III 8868, 88680B<\/div>\n<\/td>\n
6<\/a><\/td>\n2013<\/span><\/td>\n<\/tr>\n
ZnO nanowire growth and characterization for UV detection and imaging applications<\/a><\/p>\n
A Rivera, MA Mazady, J Zeller, M Anwar, T Manzur, A Sood<\/div>\n
Sensors, and Command, Control, Communications, and Intelligence (C3I\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2013<\/span><\/td>\n<\/tr>\n
Room-Temperature Quantum Cascade Laser: ZnO\/Zn1\u2212 xMgxO Versus GaN\/AlxGa1\u2212 xN<\/a><\/p>\n
HC Chou, A Mazady, J Zeller, T Manzur, M Anwar<\/div>\n
Journal of electronic materials 42 (5), 882-888<\/div>\n<\/td>\n
3<\/a><\/td>\n2013<\/span><\/td>\n<\/tr>\n
A comparison of ZnO nanowires and nanorods grown using MOCVD and hydrothermal processes<\/a><\/p>\n
A Rivera, J Zeller, A Sood, M Anwar<\/div>\n
Journal of electronic materials 42 (5), 894-900<\/div>\n<\/td>\n
19<\/a><\/td>\n2013<\/span><\/td>\n<\/tr>\n
MOCVD growth of ZnO nanowire arrays for advanced UV detectors<\/a><\/p>\n
A Rivera, A Mazady, J Zeller, M Anwar, T Manzur, A Sood<\/div>\n
Oxide-based Materials and Devices IV 8626, 86260B<\/div>\n<\/td>\n
1<\/a><\/td>\n2013<\/span><\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense<\/a><\/p>\n
MF Anwar, TW Crowe, T Manzur<\/div>\n
Proc. of SPIE Vol 8716, 871601-1<\/div>\n<\/td>\n
<\/td>\n2013<\/span><\/td>\n<\/tr>\n
MOCVD growth and characterization of ZnO nanowire arrays for advanced ultraviolet detectors<\/a><\/p>\n
A Rivera, J Zeller, T Manzur, A Sood, M Anwar<\/div>\n
Unmanned\/Unattended Sensors and Sensor Networks IX 8540, 854008<\/div>\n<\/td>\n
<\/td>\n2012<\/span><\/td>\n<\/tr>\n
MOCVD growth and characterization of ZnO nanowire arrays for UV detectors<\/a><\/p>\n
A Rivera, J Zeller, T Manzur, A Sood, M Anwar<\/div>\n
Proceedings of SPIE 8540<\/div>\n<\/td>\n
7<\/a><\/td>\n2012<\/span><\/td>\n<\/tr>\n
ZnO\/Zn1\u2212x<\/sub>Mgx<\/sub>O QCL: A high power room temperature THz source<\/a><\/p>\n
HC Chou, J Zeller, T Manzur, M Anwar<\/div>\n
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4<\/div>\n<\/td>\n
<\/td>\n2012<\/span><\/td>\n<\/tr>\n
Energy scavenging using ZnO nanorods grown on flexible substrates<\/a><\/p>\n
A Rivera, A Edington, J Zeller, M Anwar<\/div>\n
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4<\/div>\n<\/td>\n
1<\/a><\/td>\n2012<\/span><\/td>\n<\/tr>\n
Transient analysis of memristors<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4<\/div>\n<\/td>\n
2<\/a><\/td>\n2012<\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense<\/a><\/p>\n
AFM Anwar, NK Dhar, TW Crowe<\/div>\n
Proc. of SPIE Vol 8363, 836301-1<\/div>\n<\/td>\n
<\/td>\n2012<\/span><\/td>\n<\/tr>\n
Nitride THz GaN quantum cascade lasers<\/a><\/p>\n
HC Chou, M Anwar, T Manzur, J Zeller, AK Sood<\/div>\n
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
DC circuit model of a memristor<\/a><\/p>\n
A Mazady, M Anwar<\/div>\n
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2<\/div>\n<\/td>\n
2<\/a><\/td>\n2011<\/span><\/td>\n<\/tr>\n
Growth and characterization of nanowires and nanorods on Al2<\/sub>O3<\/sub>(110), Si(111) and SiO2<\/sub>\/p-Si(100) by MOCVD<\/a><\/p>\n
A Rivera, M Anwar, MR Monville, S Chang, J Zeller, AK Sood, T Manzur<\/div>\n
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2<\/div>\n<\/td>\n
1<\/a><\/td>\n2011<\/span><\/td>\n<\/tr>\n
AN ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF POLYSILICON MOSFET’s AFM ANWAR AND AN KHONDKER<\/a><\/p>\n
AFM ANWAR<\/div>\n
Materials Issues in Amorphous-Semiconductor Technology 53, 441<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
EO\/IR sensor development using nanostructures for unattended ground sensor applications<\/a><\/p>\n
AK Sood, JW Zeller, YR Puri, T Manzur, NK Dhar, A Rivera, AFM Anwar, …<\/div>\n
Unmanned\/Unattended Sensors and Sensor Networks VIII 8184, 818408<\/div>\n<\/td>\n
1<\/a><\/td>\n2011<\/span><\/td>\n<\/tr>\n
STRAIN INDUCED ACTIVE LAYER DESIGN OF GaN-THz QUANTUM CASCADE LASERS<\/a><\/p>\n
T MANZUR, M ANWAR<\/div>\n
International Journal of High Speed Electronics and Systems 20 (03), 621-627<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
An overview of solid state THz generation and issues related to GaN<\/a><\/p>\n
M Anwar, A Chou, A Rivera, T Manzur<\/div>\n
Photonics Society Summer Topical Meeting Series, 2011 IEEE, 97-99<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
Active layer design of THz GaN quantum cascade lasers<\/a><\/p>\n
HC Chou, T Manzur, M Anwar<\/div>\n
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry\u00a0\u2026<\/div>\n<\/td>\n
5<\/a><\/td>\n2011<\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense<\/a><\/p>\n
M Anwar, NK Dhar, TW Crowe<\/div>\n
SPIE<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
Growth and characterization of ZnO nanostructures for UV sensor applications<\/a><\/p>\n
AK Sood, EJ Egerton, YR Puri, J Zeller, T Manzur, DL Polla, NK Dhar, …<\/div>\n
Oxide-based Materials and Devices II 7940, 79400Z<\/div>\n<\/td>\n
<\/td>\n2011<\/span><\/td>\n<\/tr>\n
ZnO Nanostructures for Optoelectronic Applications<\/a><\/p>\n
AK Sood, ZL Wang, DL Polla, NK Dhar, T Manzur, AFM Anwar<\/div>\n
Optoelectronic Devices and Properties<\/div>\n<\/td>\n
8<\/a><\/td>\n2011<\/span><\/td>\n<\/tr>\n
Insulated gate silicon nanowire transistor and method of manufacture<\/a><\/p>\n
AF Anwar, RT Webster<\/div>\n
US Patent 7,700,419<\/div>\n<\/td>\n
42<\/a><\/td>\n2010<\/span><\/td>\n<\/tr>\n
Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry\u00a0\u2026<\/a><\/p>\n
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …<\/div>\n
Journal of Power Sources 195 (4), 984-993<\/div>\n<\/td>\n
40<\/a><\/td>\n2010<\/span><\/td>\n<\/tr>\n
Study of temperature, air dew point temperature and reactant flow effects on PEMFC performances using electrochemical spectroscopy and voltammetry techniques<\/a><\/p>\n
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …<\/div>\n
Journal of Power Sources 195 (4), pp. 984-993<\/div>\n<\/td>\n
2<\/a><\/td>\n2010<\/span><\/td>\n<\/tr>\n
Electromagnetic Component Research<\/a><\/p>\n
RT Webster, JR Reid, EE Crisman, AF Anwar<\/div>\n
AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIRECTORATE\/ELECTROMAGNETICS\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2009<\/span><\/td>\n<\/tr>\n
GaN-based THz advanced quantum cascade lasers for manned and unmanned systems<\/a><\/p>\n
AFM Anwar, T Manzur, KR Lefebvre, EM Carapezza<\/div>\n
Unmanned\/Unattended Sensors and Sensor Networks VI 7480, 748012<\/div>\n<\/td>\n
<\/td>\n2009<\/span><\/td>\n<\/tr>\n
Insulated gate silicon nanowire transistor and method of manufacture<\/a><\/p>\n
AF Anwar, RT Webster<\/div>\n
US Patent 7,485,908<\/div>\n<\/td>\n
10<\/a><\/td>\n2009<\/span><\/td>\n<\/tr>\n
An experimental study of the temperature, relative humidity and flow rate effects on the performances of a single PEMFC<\/a><\/p>\n
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, …<\/div>\n
FDFC, 1-12<\/div>\n<\/td>\n
<\/td>\n2008<\/span><\/td>\n<\/tr>\n
Terahertz Physics, Devices, and Systems II<\/a><\/p>\n
M Anwar, AJ DeMaria, MS Shur<\/div>\n
Terahertz Physics, Devices, and Systems II 6772<\/div>\n<\/td>\n
<\/td>\n2007<\/span><\/td>\n<\/tr>\n
Terahertz physics, devices, and systems<\/a><\/p>\n
M Anwar, AJ DeMaria, MS Shur<\/div>\n
Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series 6373<\/div>\n<\/td>\n
3<\/a><\/td>\n2006<\/span><\/td>\n<\/tr>\n
Schottky barrier height in GaN\/AlGaN heterostructures<\/a><\/p>\n
AFM Anwar, EW Faraclas<\/div>\n
Solid-State Electronics 50 (6), 1041-1045<\/div>\n<\/td>\n
23<\/a><\/td>\n2006<\/span><\/td>\n<\/tr>\n
AlGaN\/GaN HEMTs: Experiment and simulation of DC characteristics<\/a><\/p>\n
EW Faraclas, AFM Anwar<\/div>\n
Solid-state electronics 50 (6), 1051-1056<\/div>\n<\/td>\n
46<\/a><\/td>\n2006<\/span><\/td>\n<\/tr>\n
Bias induced strain in\u00a0\u00a0heterojunction field effect transistors and its implications<\/a><\/p>\n
AFM Anwar, RT Webster, KV Smith<\/div>\n
Applied physics letters 88 (20), 203510<\/div>\n<\/td>\n
62<\/a><\/td>\n2006<\/span><\/td>\n<\/tr>\n
Power Conditioning and Control of Fuel Cell Systems<\/a><\/p>\n
EW Faraclas, SS Islam, AFM Anwar<\/div>\n
Fuel Cell Technology, 253-275<\/div>\n<\/td>\n
<\/td>\n2006<\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/td>\n<\/tr>\n
Response to \u201cComment on \u2018Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors\u2019\u201d[Appl. Phys. Lett. 86, 016101 (2005)]<\/a><\/p>\n
AFM Anwar, SS Islam, RT Webster<\/div>\n
Applied Physics Letters 86 (1), 016101<\/div>\n<\/td>\n
<\/td>\n2005<\/span><\/td>\n<\/tr>\n
Spice model of AlGaN\/GaN hemts and simulation of VCO and power amplifier<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
High Performance Devices, 229-235<\/div>\n<\/td>\n
10<\/a><\/td>\n2005<\/span><\/td>\n<\/tr>\n
Localization and shot noise in nanostructures<\/a><\/p>\n
AFM Anwar<\/div>\n
Nanosensing: Materials and Devices 5593, 408-416<\/div>\n<\/td>\n
<\/td>\n2004<\/span><\/td>\n<\/tr>\n
Noise Characterization for Heterojunction Bipolar Transistors (HBTs)<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2004<\/span><\/td>\n<\/tr>\n
Noise in Metamorphic AlGaAsSb\/InGaAs\/AlGaAsSb HEMTs<\/a><\/p>\n
RT Webster, AFM Anwar<\/div>\n
Solid-State Electronics 48 (10-11), 2007-2011<\/div>\n<\/td>\n
2<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
Dependence of RF performance of GaN\/AlGaN HEMTs upon AlGaN barrier layer variation<\/a><\/p>\n
E Faraclas, RT Webster, G Brandes, AFM Anwar<\/div>\n
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026<\/div>\n<\/td>\n
6<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
REPORT DOCUMENTATlON PAGE om\u00e9\u2019Wf\ufb01\u2019imtaa<\/a><\/p>\n
SS Islam, AFM Anwar, RTW gATASK NUMBER<\/div>\n
IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (6)<\/div>\n<\/td>\n
<\/td>\n2004<\/span><\/td>\n<\/tr>\n
A physics-based frequency dispersion model of GaN MESFETs<\/a><\/p>\n
SS Islam, AFM Anwar, RT Webster<\/div>\n
IEEE Transactions on electron devices 51 (6), 846-853<\/div>\n<\/td>\n
25<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
Self-heating and trapping effects on the RF performance of GaN MESFETs<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
IEEE transactions on microwave theory and techniques 52 (4), 1229-1236<\/div>\n<\/td>\n
31<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
Carrier trapping and current collapse mechanism in GaN metal\u2013semiconductor field-effect transistors<\/a><\/p>\n
AFM Anwar, SS Islam, RT Webster<\/div>\n
Applied physics letters 84 (11), 1970-1972<\/div>\n<\/td>\n
24<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
Quantum Well Infrared Photodetectors: Theoretical Aspects<\/a><\/p>\n
AFM Anwar, KR Lefebvre<\/div>\n
Encyclopedia of Nanoscience and Nanotechnology 9 (224), 199-224<\/div>\n<\/td>\n
<\/td>\n2004<\/span><\/td>\n<\/tr>\n
Resonant tunneling devices<\/a><\/p>\n
AFM Anwar, MM Jahan<\/div>\n
Encyclopedia of Nanoscience and Nanotechnology 9 (370), 357-370<\/div>\n<\/td>\n
1<\/a><\/td>\n2004<\/span><\/td>\n<\/tr>\n
Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN\/GaN HFETs<\/a><\/p>\n
SS Islam, MN Rahman, AFM Anwar<\/div>\n
Semiconductor Device Research Symposium, 2003 International, 441-442<\/div>\n<\/td>\n
1<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOS<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
Semiconductor Device Research Symposium, 2003 International, 168-169<\/div>\n<\/td>\n
<\/td>\n2003<\/span><\/td>\n<\/tr>\n
A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs<\/a><\/p>\n
SS Islam, AFM Anwar, RT Webster<\/div>\n
Device Research Conference, 2003, 69-70<\/div>\n<\/td>\n
3<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
Analysis of RF performances of GaN MESFETs including self-heating and trapping effects<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
Microwave Symposium Digest, 2003 IEEE MTT-S International 1, 459-462<\/div>\n<\/td>\n
1<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
A self-consistent model for small-signal parameters and noise performance of InAlAs\/InGaAs\/InAlAs\/InP HEMTs<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Solid-State Electronics 47 (5), 763-768<\/div>\n<\/td>\n
1<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
Bias dependence of high-frequency noise in heterojunction bipolar transistors<\/a><\/p>\n
MM Jahan, KW Liu, AFM Anwar<\/div>\n
IEEE transactions on microwave theory and techniques 51 (3), 677-683<\/div>\n<\/td>\n
1<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
Frequency and temperature dependence of gain compression in GaN\/AlGaN HEMT amplifiers<\/a><\/p>\n
A Ahmed, SS Islam, AFM Anwar<\/div>\n
Solid-State Electronics 47 (2), 339-344<\/div>\n<\/td>\n
12<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
Effects of impurity traps on gate current and trapped charge in MOSFETs<\/a><\/p>\n
SS Islam, MR Khan, AFM Anwar<\/div>\n
Solid-State Electronics 47 (2), 333-337<\/div>\n<\/td>\n
3<\/a><\/td>\n2003<\/span><\/td>\n<\/tr>\n
A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors<\/a><\/p>\n
AFM Anwar, MM Jahan<\/div>\n
IEEE Transactions on Electron Devices 50 (2), 272-277<\/div>\n<\/td>\n
<\/td>\n2003<\/span><\/td>\n<\/tr>\n
Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
IEEE transactions on microwave theory and techniques 50 (11), 2474-2479<\/div>\n<\/td>\n
16<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Frequency dependence of GaN\/AlGaN HEMT amplifier using time-domain analysis<\/a><\/p>\n
AFM Anwar, SS Islam<\/div>\n
Solid-State Electronics 46 (10), 1507-1511<\/div>\n<\/td>\n
1<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
High frequency GaN\/AlGaN HEMT class-E power amplifier<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
Solid-State Electronics 46 (10), 1621-1625<\/div>\n<\/td>\n
3<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
AlGaAsSb\/InGaAs\/AlGaAsSb metamorphic HEMTs<\/a><\/p>\n
RT Webster, AFM Anwar, JL Heaton, K Nichols, S Duncan<\/div>\n
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026<\/div>\n<\/td>\n
1<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Thermal and trapping effects in GaN-based MESFETs<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026<\/div>\n<\/td>\n
2<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Design of GaN\/AlGaN HEMT class-E power amplifier considering trapping and thermal effects<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference\u00a0\u2026<\/div>\n<\/td>\n
4<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354<\/div>\n<\/td>\n
4<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Temperature-dependent nonlinearities in GaN\/AlGaN HEMTs<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
IEEE Transactions on Electron Devices 49 (5), 710-717<\/div>\n<\/td>\n
18<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Large-signal modeling of GaN-based microwave power transistors<\/a><\/p>\n
SS Islam<\/div>\n
<\/div>\n<\/td>\n
4<\/a><\/td>\n2002<\/span><\/td>\n<\/tr>\n
Temperature dependent transport parameters in short GaN structures<\/a><\/p>\n
AFM Anwar, S Wu, RT Webster<\/div>\n
physica status solidi (b) 228 (2), 575-578<\/div>\n<\/td>\n
10<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
A temperature-dependent nonlinear analysis of GaN\/AlGaN HEMTs using Volterra series<\/a><\/p>\n
A Ahmed, SS Islam, AFM Anwar<\/div>\n
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524<\/div>\n<\/td>\n
31<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
Temperature dependence of intermodulation and linearity in GaN based devices<\/a><\/p>\n
A Ahmed, SS Islam, AFM Anwar<\/div>\n
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers\u00a0\u2026<\/div>\n<\/td>\n
3<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
Temperature dependent transport properties in GaN, Al\/sub x\/Ga\/sub 1-x\/N, and In\/sub x\/Ga\/sub 1-x\/N semiconductors<\/a><\/p>\n
AFM Anwar, S Wu, RT Webster<\/div>\n
IEEE Transactions on Electron devices 48 (3), 567-572<\/div>\n<\/td>\n
103<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
RF performance of GaN\/AlGaN HEMT amplifier<\/a><\/p>\n
AFM Anwar, SS Islam<\/div>\n
Semiconductor Device Research Symposium, 2001 International, 209-212<\/div>\n<\/td>\n
4<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
Gain compression in GaN HEMT amplifiers<\/a><\/p>\n
A Ahmed, SS Islam, AFM Anwar<\/div>\n
Semiconductor Device Research Symposium, 2001 International, 205-208<\/div>\n<\/td>\n
2<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
An analytical model of small-signal parameters for GaAs\/AlGaAs inverted high electron mobility transistors<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Microelectronics journal 32 (1), 85-88<\/div>\n<\/td>\n
1<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
GaN\/AlGaN HEMT microwave class-e power amplifier<\/a><\/p>\n
SS Islam, AFM Anwar<\/div>\n
Semiconductor Device Research Symposium, 2001 International, 446-449<\/div>\n<\/td>\n
7<\/a><\/td>\n2001<\/span><\/td>\n<\/tr>\n
Impact ionization in InAlAs\/InGaAs\/InAlAs HEMT’s<\/a><\/p>\n
RT Webster, S Wu, AFM Anwar<\/div>\n
IEEE Electron Device Letters 21 (5), 193-195<\/div>\n<\/td>\n
72<\/a><\/td>\n2000<\/span><\/td>\n<\/tr>\n
Base transit time in abrupt GaN\/InGaN\/GaN HBT’s<\/a><\/p>\n
SY Chiu, AFM Anwar, S Wu<\/div>\n
IEEE Transactions on Electron Devices 47 (4), 662-666<\/div>\n<\/td>\n
7<\/a><\/td>\n2000<\/span><\/td>\n<\/tr>\n
Monte Carlo simulation in submicron GaAs n+ nn+ diodes<\/a><\/p>\n
S Wu, AFM Anwar<\/div>\n
SPIE proceedings series, 550-553<\/div>\n<\/td>\n
1<\/a><\/td>\n2000<\/span><\/td>\n<\/tr>\n
A theoretical determination of impact ionization induced gate current in InP HEMTs<\/a><\/p>\n
S Wu, AFM Anwar<\/div>\n
High Performance Devices, 2000. Proceedings. 2000 IEEE\/Cornell Conference on\u00a0\u2026<\/div>\n<\/td>\n
1<\/a><\/td>\n2000<\/span><\/td>\n<\/tr>\n
High-frequency microwave characteristics of HBTs<\/a><\/p>\n
SY Chiu, AFM Anwar<\/div>\n
SPIE proceedings series, 546-549<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
Process Development on 0.12-um Gate E\/D GaAs MESFETs with f and f,> 100GHz Using Direct Ion Implantation for Low Power IC Applications<\/a><\/p>\n
Z Tang, H Hsia, D Becher, D Caruth, M Feng<\/div>\n
<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
The small-signal parameters and noise characterization for inverted GaAs\/AlGaAs high electron mobility transistors<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
SUB-MICRON DEVICES<\/a><\/p>\n
S Wu, AFM Anwar<\/div>\n
Proceedings, 2000 IEEE\/Cornell Conference on High Performance Devices\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
A THEORETICAL DETERIVHNATION OF] 1V [PACT IONIZATION INDUCED<\/a><\/p>\n
GCINIP HEMT, S Wu, AFM Anwar<\/div>\n
Proceedings, 2000 IEEE\/Cornell Conference on High Performance Devices\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
A modified drift-diffusion model for sub-micron devices<\/a><\/p>\n
S Wu, AFM Anwar<\/div>\n
High Performance Devices, 2000. Proceedings. 2000 IEEE\/Cornell Conference on\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n2000<\/span><\/td>\n<\/tr>\n
Effect of surface recombination on the Early voltage in HBTs<\/a><\/p>\n
SY Chiu, AFM Anwar<\/div>\n
Semiconductor science and technology 14 (9), 840<\/div>\n<\/td>\n
1<\/a><\/td>\n1999<\/span><\/td>\n<\/tr>\n
Electron-phonon interaction within an unbiased and biased quantum well<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
IEEE journal of quantum electronics 35 (2), 216-220<\/div>\n<\/td>\n
3<\/a><\/td>\n1999<\/span><\/td>\n<\/tr>\n
Physics-based intrinsic model for AlGaN\/GaN HEMTs<\/a><\/p>\n
S Wu, RT Webster, AFM Anwar<\/div>\n
Materials Research Society Internet Journal of Nitride Semiconductor\u00a0\u2026<\/div>\n<\/td>\n
21<\/a><\/td>\n1999<\/span><\/td>\n<\/tr>\n
Nonlinearity Analysis of HBTs<\/a><\/p>\n
SY Chiu, AFM Anwar<\/div>\n
Proceedings, 97<\/div>\n<\/td>\n
<\/td>\n1999<\/span><\/td>\n<\/tr>\n
Base transit time in abrupt GaN\/InGaN\/GaN and AlGaN\/GaN\/AlGaN HBTs<\/a><\/p>\n
SY Chiu, AFM Anwar, S Wu<\/div>\n
Materials Research Society Internet Journal of Nitride Semiconductor\u00a0\u2026<\/div>\n<\/td>\n
6<\/a><\/td>\n1999<\/span><\/td>\n<\/tr>\n
Energy bandgap of AlxGa1\u2212 xAs1\u2212 ySby and conduction band discontinuity of AlxGa1\u2212 xAs1\u2212 ySby\/InAs and AlxGa1\u2212 xAs1\u2212 ySby\/InGaAs heterostructures<\/a><\/p>\n
AFM Anwar, RT Webster<\/div>\n
Solid-State Electronics 42 (11), 2101-2104<\/div>\n<\/td>\n
17<\/a><\/td>\n1998<\/span><\/td>\n<\/tr>\n
Broadening in the absorption line through a redistribution of the density of states<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
Physics and Simulation of Optoelectronic Devices VI 3283, 952-960<\/div>\n<\/td>\n
<\/td>\n1998<\/span><\/td>\n<\/tr>\n
On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb\/InGaAs\/AlGaAsSb QW’s<\/a><\/p>\n
AFM Anwar, RT Webster<\/div>\n
IEEE Transactions on Electron Devices 45 (6), 1170-1175<\/div>\n<\/td>\n
2<\/a><\/td>\n1998<\/span><\/td>\n<\/tr>\n
Comparison of the dark current from an AlGaAs\/GaAs and AlGaN\/GaN quantum well<\/a><\/p>\n
AFM Anwar, KR Lefebvre<\/div>\n
Photodetectors: Materials and Devices III 3287, 179-187<\/div>\n<\/td>\n
<\/td>\n1998<\/span><\/td>\n<\/tr>\n
Electron escape via polar optical-phonon interaction and tunneling from biased quantum wells<\/a><\/p>\n
AFM Anwar, KR Lefebvre<\/div>\n
Physical Review B 57 (8), 4584<\/div>\n<\/td>\n
10<\/a><\/td>\n1998<\/span><\/td>\n<\/tr>\n
Comparison of the Dark Current from an AlGaAs\/GaAs and AlGaN\/GaN Quantum Well [3287-22]<\/a><\/p>\n
AFM Anwar, KR Lefebvre<\/div>\n
PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 179-187<\/div>\n<\/td>\n
<\/td>\n1998<\/span><\/td>\n<\/tr>\n
Redistribution of the quantum well density of states under the influence of an electric field<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
Semiconductor science and technology 12 (10), 1226<\/div>\n<\/td>\n
12<\/a><\/td>\n1997<\/span><\/td>\n<\/tr>\n
Electron escape dynamics from a biased quantum well<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
Physics and Simulation of Optoelectronic Devices V 2994, 442-452<\/div>\n<\/td>\n
<\/td>\n1997<\/span><\/td>\n<\/tr>\n
Electron escape time from single quantum wells<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
IEEE journal of quantum electronics 33 (2), 187-191<\/div>\n<\/td>\n
33<\/a><\/td>\n1997<\/span><\/td>\n<\/tr>\n
Impact Ionization in InP-based HEMTs<\/a><\/p>\n
RT Webster, AFM Anwar, S Wu<\/div>\n
Proceedings, 172<\/div>\n<\/td>\n
<\/td>\n1997<\/span><\/td>\n<\/tr>\n
Effect of Surface Recombination on HBT Performance<\/a><\/p>\n
SY Chhi, AFM Anwar<\/div>\n
Proceedings: 1997 International Semiconductor Device Research Symposium\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1997<\/span><\/td>\n<\/tr>\n
New method of computing band offsets and its application to AlGaN\/GaN heterostructures<\/a><\/p>\n
RT Webster, AFM Anwar<\/div>\n
MRS Online Proceedings Library Archive 482<\/div>\n<\/td>\n
2<\/a><\/td>\n1997<\/span><\/td>\n<\/tr>\n
Dark Current in AlGaAsSb\/InGaAs\/AlGaAsSb QWIPs<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
Proceedings: 1997 International Semiconductor Device Research Symposium\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1997<\/span><\/td>\n<\/tr>\n
An envelope function description of the quantum well formed in Alx<\/i><\/sub>Ga1\u2212x<\/i><\/sub>Asy<\/i><\/sub>Sb1\u2212y<\/i><\/sub>\/InAs\/Alx<\/i><\/sub>Ga1\u2212x<\/i><\/sub>Asy<\/i><\/sub>Sb1\u2212y<\/i><\/sub>\u00a0heterostructures<\/a><\/p>\n
AFM Anwar, RT Webster<\/div>\n
Journal of applied physics 80 (12), 6827-6830<\/div>\n<\/td>\n
5<\/a><\/td>\n1996<\/span><\/td>\n<\/tr>\n
Electron and hole escape times in single quantum wells<\/a><\/p>\n
KR Lefebvre, AFM Anwar<\/div>\n
Journal of applied physics 80 (6), 3595-3597<\/div>\n<\/td>\n
14<\/a><\/td>\n1996<\/span><\/td>\n<\/tr>\n
An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
Solid-State Electronics 39 (6), 941-948<\/div>\n<\/td>\n
9<\/a><\/td>\n1996<\/span><\/td>\n<\/tr>\n
An analytical noise evaluation for super low-noise InAlAs\/InGaAs\/InAlAs\/InP HEMTs<\/a><\/p>\n
KW Liu, AFM Anwar, CJ Wu<\/div>\n
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370<\/div>\n<\/td>\n
1<\/a><\/td>\n1996<\/span><\/td>\n<\/tr>\n
An analytical expression for base transit time in an exponentially doped base bipolar transistor<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
Solid-State Electronics 39 (1), 133-136<\/div>\n<\/td>\n
16<\/a><\/td>\n1996<\/span><\/td>\n<\/tr>\n
An analytical characterization for IMODFETs<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 371-375<\/div>\n<\/td>\n
<\/td>\n1996<\/span><\/td>\n<\/tr>\n
Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/n-channel HEMTs and p-channel FETs<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240<\/div>\n<\/td>\n
<\/td>\n1996<\/span><\/td>\n<\/tr>\n
Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
IEEE Electron Device Letters 16 (12), 551-553<\/div>\n<\/td>\n
7<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
Early voltage in double heterojunction bipolar transistors<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
IEEE Transactions on Electron Devices 42 (11), 2028-2029<\/div>\n<\/td>\n
6<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/FETs<\/a><\/p>\n
AFM Anwar, KW Liu, VP Kesan<\/div>\n
IEEE Transactions on Electron Devices 42 (10), 1841-1846<\/div>\n<\/td>\n
16<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
Noise resistance of heterojunction bipolar transistors<\/a><\/p>\n
AFM Anwar, MK Jahan<\/div>\n
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1995<\/span><\/td>\n<\/tr>\n
Far infrared Ga\/sub 1-x\/In\/sub x\/Sb\/InAs-based strained-layer superlattice detectors grown by OMVPE<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1995<\/span><\/td>\n<\/tr>\n
A charge control and current-voltage model for inverted MODFET’s<\/a><\/p>\n
AFM Anwar, KW Liu, AN Khondker<\/div>\n
IEEE Transactions on Electron Devices 42 (4), 586-590<\/div>\n<\/td>\n
12<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
Shot noise in double barrier quantum structures<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
Solid-state electronics 38 (2), 429-432<\/div>\n<\/td>\n
17<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
Traversal time in an asymmetric double-barrier quantum-well structure<\/a><\/p>\n
AFM Anwar, MM Jahan<\/div>\n
IEEE journal of quantum electronics 31 (1), 3-7<\/div>\n<\/td>\n
6<\/a><\/td>\n1995<\/span><\/td>\n<\/tr>\n
A noise model for high electron mobility transistors<\/a><\/p>\n
AFM Anwar, KW Liu<\/div>\n
IEEE Transactions on Electron Devices 41 (11), 2087-2092<\/div>\n<\/td>\n
20<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
Density of states for double-barrier quantum-well structures under the influence of external fields and phase-breaking scattering<\/a><\/p>\n
AFM Anwar, MM Jahan<\/div>\n
Physical Review B 50 (15), 10864<\/div>\n<\/td>\n
18<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
Noise temperature modeling of AlGaAs\/GaAs and AlGaAs\/InGaAs\/GaAs HEMTs<\/a><\/p>\n
AFM Anwar, KW Liu<\/div>\n
Solid-state electronics 37 (9), 1585-1588<\/div>\n<\/td>\n
8<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
An analytical model of current-voltage characteristics and dc small-signal parameters for Si\/Si1\u2212 xGex FETs<\/a><\/p>\n
KW Liu, AFM Anwar, VP Kesan<\/div>\n
Solid-state electronics 37 (8), 1570-1572<\/div>\n<\/td>\n
6<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
Self-consistent calculation of traversal time in a double-barrier resonant-tunneling structure in the presence of a transverse magnetic field<\/a><\/p>\n
AFM Anwar, MM Jahan<\/div>\n
Physical Review B 49 (24), 17440<\/div>\n<\/td>\n
20<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
A self-consistent calculation of the small signal parameters for AlGaAs\/GaAs and AlGaAs\/InGaAs\/GaAs HEMTs<\/a><\/p>\n
KW Liu, AFM Anwar<\/div>\n
Solid-state electronics 37 (1), 51-54<\/div>\n<\/td>\n
14<\/a><\/td>\n1994<\/span><\/td>\n<\/tr>\n
The role of phase\u2010breaking processes in indirect\u2010band tunneling barrier structures<\/a><\/p>\n
RA Morrisey, AN Khondker<\/div>\n
Journal of applied physics 74 (4), 2557-2561<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
DC, small\u2010signal parameters and noise performance for\u00a0SiGe<\/i>\/Si<\/i>\u00a0FETs<\/a><\/p>\n
AFM Anwar, KW Liu, MM Jahan, VP Kesan<\/div>\n
AIP Conference Proceedings 285 (1), 354-357<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
Self\u2010consistent calculation of shot noise in a double\u2010barrier resonant tunneling structure in the presence of magnetic field<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
AIP Conference Proceedings 285 (1), 521-524<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
Noise modeling for\u00a0W<\/i>\u2010band pseudomorphic InGaAs HEMT\u2019s<\/a><\/p>\n
KW Liu, AFM Anwar, RD Caroll<\/div>\n
AIP Conference Proceedings 285 (1), 280-283<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
Study of shot noise in a double barrier resonant tunneling structure<\/a><\/p>\n
MM Jahan, AFM Anwar<\/div>\n
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
An envelope function description of the quantum well formed in strained layer SiGe\/Si modulation doped field effect transistors<\/a><\/p>\n
AFM Anwar, KW Liu, RD Carroll<\/div>\n
Journal of applied physics 74 (3), 2064-2066<\/div>\n<\/td>\n
3<\/a><\/td>\n1993<\/span><\/td>\n<\/tr>\n
Noise properties of AlGaAs\/GaAs MODFET’s<\/a><\/p>\n
AFM Anwar, KW Liu<\/div>\n
IEEE Transactions on Electron Devices 40 (6), 1174-1176<\/div>\n<\/td>\n
10<\/a><\/td>\n1993<\/span><\/td>\n<\/tr>\n
Self-consistent study of the effect of a transverse magnetic field on the performance of the double barrier resonant tunneling structure<\/a><\/p>\n
MM Jahan<\/div>\n
University of Connecticut<\/div>\n<\/td>\n
1<\/a><\/td>\n1993<\/span><\/td>\n<\/tr>\n
Noise Analysis of AlGaAs\/InGaAs\/GaAs Pseudomorphic HEMTs<\/a><\/p>\n
KW Liu, AFM Anwar, MM Jahan<\/div>\n
ISDRS 1, 199<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
Noise in\u00a0Si \/ Si<\/i>\u00a01-<\/sub>\u00a0x<\/i>\u00a0<\/sub>Ge<\/i>\u00a0x<\/i>\u00a0<\/sub>n-channel HEMTs and p-channel FETs<\/a><\/p>\n
AFM Anwar, KW Liu, MM Jahan<\/div>\n
Simulation of Semiconductor Devices and Processes, 273-276<\/div>\n<\/td>\n
<\/td>\n1993<\/span><\/td>\n<\/tr>\n
Study of localization using quantum-mechanical tunneling time and modeling of shot noise<\/a><\/p>\n
AFM Anwar, KW Liu, MM Jahan<\/div>\n
Quantum Well and Superlattice Physics IV 1675, 376-388<\/div>\n<\/td>\n
1<\/a><\/td>\n1992<\/span><\/td>\n<\/tr>\n
Tunneling time through resonant tunneling devices and quantum-mechanical bistability<\/a><\/p>\n
M Cahay, KT Dalton, GS Fisher, AFM Anwar<\/div>\n
Superlattices and microstructures 11 (1), 113-117<\/div>\n<\/td>\n
7<\/a><\/td>\n1992<\/span><\/td>\n<\/tr>\n
Influence of impurity scattering on the traversal time and current-voltage characteristics of resonant tunneling structures<\/a><\/p>\n
AFM Anwar, RB LaComb, M Cahay<\/div>\n
Superlattices and microstructures 11 (1), 131-135<\/div>\n<\/td>\n
4<\/a><\/td>\n1992<\/span><\/td>\n<\/tr>\n
Monte Carlo simulation of SiGe\/Si MESFETs<\/a><\/p>\n
M Gokhale, AFM Anwar, RD Carrol, FC Jain<\/div>\n
COMPEL-The international journal for computation and mathematics in\u00a0\u2026<\/div>\n<\/td>\n
1<\/a><\/td>\n1991<\/span><\/td>\n<\/tr>\n
TAILORING THE TWO DIMENSIONAL ELECTRON GAS DISTRIBUTION BY SELECTIVE DOPING OF THE QUANTUM WELL<\/a><\/p>\n
AFM Anwar, RD Carrol<\/div>\n
COMPEL-The international journal for computation and mathematics in\u00a0\u2026<\/div>\n<\/td>\n
<\/td>\n1991<\/span><\/td>\n<\/tr>\n
Approximate analytic current-voltage calculations for MODFETs<\/a><\/p>\n
AN Khondker, AFM Anwar<\/div>\n
IEEE Transactions on Electron Devices 37 (1), 314-317<\/div>\n<\/td>\n
9<\/a><\/td>\n1990<\/span><\/td>\n<\/tr>\n
Calculation of the traversal time in resonant tunneling devices<\/a><\/p>\n
AFM Anwar, AN Khondker, MR Khan<\/div>\n
Journal of applied physics 65 (7), 2761-2765<\/div>\n<\/td>\n
118<\/a><\/td>\n1989<\/span><\/td>\n<\/tr>\n
On modelling of quantum well devices.<\/a><\/p>\n
AFM Anwar<\/div>\n
<\/div>\n<\/td>\n
1<\/a><\/td>\n1989<\/span><\/td>\n<\/tr>\n
Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept<\/a><\/p>\n
AN Khondker, MR Khan, AFM Anwar<\/div>\n
Journal of applied physics 63 (10), 5191-5193<\/div>\n<\/td>\n
179<\/a><\/td>\n1988<\/span><\/td>\n<\/tr>\n
Envelope function description of double\u2010heterojunction quantum wells<\/a><\/p>\n
AFM Anwar, AN Khondker<\/div>\n
Journal of applied physics 62 (10), 4200-4203<\/div>\n<\/td>\n
5<\/a><\/td>\n1987<\/span><\/td>\n<\/tr>\n
Analytical models for AlGaAs\/GaAs heterojunction quantum wells<\/a><\/p>\n
AN Khondker, AFM Anwar<\/div>\n
Solid-state electronics 30 (8), 847-852<\/div>\n<\/td>\n
23<\/a><\/td>\n1987<\/span><\/td>\n<\/tr>\n
A model for polysilicon MOSFET’s<\/a><\/p>\n
AFM Anwar, AN Khondker<\/div>\n
IEEE Transactions on Electron Devices 34 (6), 1323-1330<\/div>\n<\/td>\n
19<\/a><\/td>\n1987<\/span><\/td>\n<\/tr>\n
Charge control mechanism in MODFET’s: a theoretical analysis<\/a><\/p>\n
AN Khondker, AFM Anwar, MA Islam, L Limoncelli, D Wilson<\/div>\n
IEEE transactions on electron devices 33 (11), 1825-1826<\/div>\n<\/td>\n
14<\/a><\/td>\n1986<\/span><\/td>\n<\/tr>\n
An analytical model for the threshold voltage of polysilicon MOSFET’s<\/a><\/p>\n
AFM Anwar, AN Khondker<\/div>\n
MRS Online Proceedings Library Archive 53<\/div>\n<\/td>\n
<\/td>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Journal Articles: Title\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0 […]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-no-title-breadcrumb.php","meta":{"footnotes":""},"class_list":["post-22","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/22","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=22"}],"version-history":[{"count":13,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/22\/revisions"}],"predecessor-version":[{"id":344,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/22\/revisions\/344"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=22"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}