{"id":267,"date":"2018-10-23T14:18:11","date_gmt":"2018-10-23T14:18:11","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=267"},"modified":"2019-06-20T16:00:25","modified_gmt":"2019-06-20T16:00:25","slug":"engineered-nanostructures-for-authentication","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/","title":{"rendered":"Engineered Nanostructures for Authentication"},"content":{"rendered":"<div id=\"pl-267\"  class=\"panel-layout\" ><div id=\"pg-267-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-267-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-267-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-267-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-267-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><span style=\"font-size: 24pt\"><strong>Engineered Nanostructures for Authentication<\/strong><\/span><\/p>\n<hr \/>\n<p><img loading=\"lazy\" decoding=\"async\" class=\" wp-image-187 aligncenter\" src=\"http:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/THz-Assited-Counterfeit-Detection.png\" alt=\"\" width=\"324\" height=\"192\" \/><\/p>\n<p>The increasing proliferation of counterfeit electronic components threatens both commercial and military systems in the areas of product performance, reliability and dependability. They are of great concern because of (i) the negative impact that they can have on innovation, (ii) the threat they pose to the welfare of consumers, and (iii) the substantial resources that might be channeled to criminal and other networks.<\/p>\n<p>The development and demonstration of different counterfeit detection technologies extending from optical inspection to rather sophisticated x-ray imaging have been able to identify certain sets of counterfeit defects. These techniques are yet to be consolidated such that counterfeit identifications are conclusive and without any false positives. Different counterfeit identification schemes such as DNA, Nanotag, RFID, PUF provides solutions but do not offer a comprehensive solution. Counterfeit detection still has much intrinsic subjectivity, and thus the confidence level of the associated results is lacking. Technologies such as DNA and RFID though provides excellent authentication accuracy are slow in authentication of counterfeit electronic components as well as are prone to imitation.\u00a0 Nanotags do not suffer from the same limitations but slows down the process time and are expensive. The challenge is to be able to incorporate counterfeit identification signatures in COTS electronic components alleviating the requirement of a suite of expensive and time consuming counterfeit detection schemes.<\/p>\n<p>The Engineered Nanostructures (ENS) utilizing some unique optical properties of tailored nano-structures does not suffer from the detrimental attributes of any one of these technologies and offers an inexpensive but reliable technology to ensure authenticity of electronic components.<\/p>\n<p style=\"text-align: right\"><img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-269 alignright\" src=\"http:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/ENS-1-300x209.png\" alt=\"\" width=\"300\" height=\"209\" srcset=\"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/ENS-1-300x209.png 300w, https:\/\/www.ee.uconn.edu\/anwar-research\/wp-content\/uploads\/sites\/38\/2018\/10\/ENS-1.png 350w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/p>\n<p>Engineered submicron features modifying some of the physical properties of the IC capping material are being proposed as a tool for the identification of counterfeit ICs. The submicron signature invisible to the naked eye but visible under high magnification optical microscopes (&gt;x1000) modify the optical properties of the capping material and detected by using inexpensive and fast optical probing such as shining a laser pointer on the surface of the IInitial proof of concept validation successfully demonstrated the effectiveness of the proposed counterfeit inhibition technology.\u00a0 The figure shows a simple demonstration using laser pointer to excite the engineered nano-signature (ENS).\u00a0 The presence of ENS generates the two distinct reflections, one from the surface of the IC capping layer and an additional reflection (lower spot) due to ENS.<\/p>\n<p>It is believed that the proposed technology offers the following:<\/p>\n<ul>\n<li>A tool allowing identification of good ICs, already been capped and in post design phase.<\/li>\n<li>Impossible to resurface and re-introduced in the market as any retooling of the surface destroys ENS.<\/li>\n<li>The ENS array can be tailored to provide unique signatures unique to the IC. This random signature either unique to a family if ICs or an individual IC may be entered into an IC identifier register for future reference and cross-verification.\u00a0 This will allow the detection of over-produced or counterfeit ICs as the counterfeiters will not be able to re-generate the random ENS unique to an individual IC even if they are able to imprint one particular ENS.<\/li>\n<\/ul>\n<hr \/>\n<p><strong>Publications:<\/strong><\/p>\n<ul>\n<li>Fabrication of robust nano-signatures for identification of authentic electronic components and counterfeit avoidance, K Ahi, A Rivera, A Mazadi, M Anwar,\u00a0International Journal of High Speed Electronics and Systems 26 (03), 1740006, 2017<\/li>\n<li>Encrypted electron beam lithography nano-signatures for authentication, K Ahi, A Rivera, M Anwar,\u00a0International Journal of High Speed Electronics and Systems 26 (03), 1740017, 2017<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Engineered Nanostructures for Authentication The increasing proliferation of counterfeit electronic components threatens both commercial and military systems in the areas of product performance, reliability and dependability. They are of great concern because of (i) the negative impact that they can have on innovation, (ii) the threat they pose to the welfare of consumers, and (iii) [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-frontpage.php","meta":{"footnotes":""},"class_list":["post-267","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/267","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=267"}],"version-history":[{"count":13,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/267\/revisions"}],"predecessor-version":[{"id":428,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/267\/revisions\/428"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=267"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}