{"id":375,"date":"2018-11-07T16:03:34","date_gmt":"2018-11-07T16:03:34","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=375"},"modified":"2026-04-07T19:03:41","modified_gmt":"2026-04-07T19:03:41","slug":"fundamental-physics","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/","title":{"rendered":"Fundamental Physics"},"content":{"rendered":"<div id=\"pl-375\"  class=\"panel-layout\" ><div id=\"pg-375-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-375-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-375-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-375-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-375-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><span style=\"font-size: 24pt\">Fundamental Physics<\/span><\/p>\n<hr \/>\n<p><strong>Publications:<\/strong><\/p>\n<ul>\n<li>Localization and shot noise in nanostructures, AFM Anwar, Nanosensing: Materials and Devices 5593, 408-416<\/li>\n<li>Broadening in the absorption line through a redistribution of the density of states, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices VI 3283, 952-960<\/li>\n<li>On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb\/InGaAs\/AlGaAsSb QW's, AFM Anwar, RT Webster, IEEE Transactions on Electron Devices 45 (6), 1170-1175<\/li>\n<li>Electron escape via polar optical-phonon interaction and tunneling from biased quantum wells, AFM Anwar, KR Lefebvre, Physical Review B 57 (8), 4584<\/li>\n<li>Redistribution of the quantum well density of states under the influence of an electric field, KR Lefebvre, AFM Anwar, Semiconductor science and technology 12 (10), 1226<\/li>\n<li>Electron escape dynamics from a biased quantum well, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices V 2994, 442-452<\/li>\n<li>Electron escape time from single quantum wells, KR Lefebvre, AFM Anwar, IEEE journal of quantum electronics 33 (2), 187-191<\/li>\n<li>New method of computing band offsets and its application to AlGaN\/GaN heterostructures, RT Webster, AFM Anwar, MRS Online Proceedings Library Archive 482<\/li>\n<li>Electron and hole escape times in single quantum wells, KR Lefebvre, AFM Anwar, Journal of applied physics 80 (6), 3595-3597<\/li>\n<li>Density of states for double-barrier quantum-well structures under the influence of external fields and phase-breaking scattering, AFM Anwar, MM Jahan, Physical Review B 50 (15), 10864<\/li>\n<li>Self-consistent calculation of traversal time in a double-barrier resonant-tunneling structure in the presence of a transverse magnetic field, AFM Anwar, MM Jahan, Physical Review B 49 (24), 17440<\/li>\n<li>Self\u2010consistent calculation of shot noise in a double\u2010barrier resonant tunneling structure in the presence of magnetic field, MM Jahan, AFM Anwar, AIP Conference Proceedings 285 (1), 521-524<\/li>\n<li>Self-consistent study of the effect of a transverse magnetic field on the performance of the double barrier resonant tunneling structure, MM Jahan, University of Connecticut<\/li>\n<li>Study of localization using quantum-mechanical tunneling time and modeling of shot noise, AFM Anwar, KW Liu, MM Jahan, Quantum Well and Superlattice Physics IV 1675, 376-388<\/li>\n<li>Tunneling time through resonant tunneling devices and quantum-mechanical bistability, M Cahay, KT Dalton, GS Fisher, AFM Anwar, Superlattices and microstructures 11 (1), 113-117<\/li>\n<li>Influence of impurity scattering on the traversal time and current-voltage characteristics of resonant tunneling structures, AFM Anwar, RB LaComb, M Cahay, Superlattices and microstructures 11 (1), 131-135<\/li>\n<li>Tailoring the two dimensional electron gas distribution by selective doping of the quantum well, AFM Anwar, RD Carrol, The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 Issue: 4, pp.269-275<\/li>\n<li>Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept, AN Khondker, MR Khan, AFM Anwar, Journal of applied physics 63 (10), 5191-5193<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Fundamental Physics Publications: Localization and shot noise in nanostructures, AFM Anwar, Nanosensing: Materials and Devices 5593, 408-416 Broadening in the absorption line through a redistribution of the density of states, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices VI 3283, 952-960 On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-noside-menu.php","meta":{"footnotes":""},"class_list":["post-375","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/375","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=375"}],"version-history":[{"count":7,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/375\/revisions"}],"predecessor-version":[{"id":431,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/375\/revisions\/431"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=375"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}