{"id":377,"date":"2018-11-07T16:04:07","date_gmt":"2018-11-07T16:04:07","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/anwar-research\/?page_id=377"},"modified":"2018-12-01T18:17:07","modified_gmt":"2018-12-01T18:17:07","slug":"si-related-devices","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/","title":{"rendered":"Si &amp; Related Devices"},"content":{"rendered":"<div id=\"pl-377\"  class=\"panel-layout\" ><div id=\"pg-377-0\"  class=\"panel-grid panel-no-style\" ><div id=\"pgc-377-0-0\"  class=\"panel-grid-cell\" ><div id=\"panel-377-0-0-0\" class=\"so-panel widget widget_nav_menu panel-first-child panel-last-child\" data-index=\"0\" ><h3 class=\"widget-title\">Research Topics<\/h3><div class=\"menu-research-menu-container\"><ul id=\"menu-research-menu\" class=\"menu\"><li id=\"menu-item-282\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-282\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/memristor\/\">Memristor<\/a><\/li>\n<li id=\"menu-item-291\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-291\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/zno\/\">ZnO<\/a><\/li>\n<li id=\"menu-item-283\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-283\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz\/\">THz<\/a><\/li>\n<li id=\"menu-item-284\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-284\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/quantum-cascade-laser\/\">Quantum Cascade Laser<\/a><\/li>\n<li id=\"menu-item-285\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-285\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/high-electron-mobility-transistors-hemts\/\">High Electron Mobility Transistors (HEMTs)<\/a><\/li>\n<li id=\"menu-item-286\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-286\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/heterojunction-bipolar-transistors-hbts\/\">Heterojunction Bipolar Transistors (HBTs)<\/a><\/li>\n<li id=\"menu-item-287\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-287\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/resonant-tunneling-devices\/\">Resonant Tunneling Devices<\/a><\/li>\n<li id=\"menu-item-288\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-288\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/transport-in-semiconductors\/\">Transport in Semiconductors<\/a><\/li>\n<li id=\"menu-item-289\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-289\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/noise-in-semiconductor-devices\/\">Noise in Semiconductor Devices<\/a><\/li>\n<li id=\"menu-item-290\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-290\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/thz-assisted-counterfeit-detection\/\">THz Assisted Counterfeit Detection<\/a><\/li>\n<li id=\"menu-item-292\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-292\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/engineered-nanostructures-for-authentication\/\">Engineered Nanostructures for Authentication<\/a><\/li>\n<li id=\"menu-item-305\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-305\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/solar-blind-detector\/\">Solar Blind Detector<\/a><\/li>\n<li id=\"menu-item-381\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-381\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/photonics\/\">Photonics<\/a><\/li>\n<li id=\"menu-item-382\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-382\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/si-related-devices\/\">Si &amp; Related Devices<\/a><\/li>\n<li id=\"menu-item-383\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-383\"><a href=\"https:\/\/www.ee.uconn.edu\/anwar-research\/fundamental-physics\/\">Fundamental Physics<\/a><\/li>\n<\/ul><\/div><\/div><\/div><div id=\"pgc-377-0-1\"  class=\"panel-grid-cell\" ><div id=\"panel-377-0-1-0\" class=\"so-panel widget widget_sow-editor panel-first-child panel-last-child\" data-index=\"1\" ><div\n\t\t\t\n\t\t\tclass=\"so-widget-sow-editor so-widget-sow-editor-base\"\n\t\t\t\n\t\t>\n<div class=\"siteorigin-widget-tinymce textwidget\">\n\t<p><span style=\"font-size: 24pt\">Si &amp; Related Devices<\/span><\/p>\n<hr \/>\n<p><strong>Publications:<\/strong><\/p>\n<ul>\n<li>An analytical model for the threshold voltage of polysilicon MOSFET, A.F.M. Anwar and A.N. Khondker, Materials Issues in Amorphous-Semiconductor Technology 53, 441, 2011<\/li>\n<li>Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, RT Webster,\u00a0US Patent 7,700,419, 2010<\/li>\n<li>Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, RT Webster,\u00a0US Patent 7,485,908, 2009<\/li>\n<li>BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOS,\u00a0SS Islam, AFM Anwar,\u00a0Semiconductor Device Research Symposium, 2003 International, 168-169, 2003<\/li>\n<li>Effects of impurity traps on gate current and trapped charge in MOSFETs, SS Islam, MR Khan, AFM Anwar,\u00a0Solid-State Electronics 47 (2), 333-337, 2003<\/li>\n<li>Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/n-channel HEMTs and p-channel FETs, KW Liu, AFM Anwar,\u00a0Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240, 1996<\/li>\n<li>Noise performance of Si\/Si\/sub 1-x\/Ge\/sub x\/FETs, AFM Anwar, KW Liu, VP Kesan,\u00a0IEEE Transactions on Electron Devices 42 (10), 1841-1846, 1995<\/li>\n<li>An analytical model of current-voltage characteristics and dc small-signal parameters for Si\/Si1\u2212 xGex FETs, KW Liu, AFM Anwar, VP Kesan,\u00a0Solid-state electronics 37 (8), 1570-1572, 1994<\/li>\n<li>DC, small\u2010signal parameters and noise performance for\u00a0<em>SiGe<\/em>\/<em>Si<\/em>\u00a0FETs, AFM Anwar, KW Liu, MM Jahan, VP Kesan,\u00a0AIP Conference Proceedings 285 (1), 354-357, 1993<\/li>\n<li>An envelope function description of the quantum well formed in strained layer SiGe\/Si modulation doped field effect transistors, AFM Anwar, KW Liu, RD Carroll,\u00a0Journal of applied physics 74 (3), 2064-2066, 1993<\/li>\n<li>Noise in\u00a0<em>Si \/ Si<\/em>\u00a0<sub>1-<\/sub>\u00a0<em><sub>x<\/sub><\/em><sub>\u00a0<\/sub><em>Ge<\/em>\u00a0<em><sub>x<\/sub><\/em><sub>\u00a0<\/sub>n-channel HEMTs and p-channel FETs, AFM Anwar, KW Liu, MM Jahan,\u00a0Simulation of Semiconductor Devices and Processes, 273-276, 1993<\/li>\n<li>Monte Carlo simulation of SiGe\/Si MESFETs, M Gokhale, AFM Anwar, RD Carrol, FC Jain,\u00a0COMPEL-The international journal for computation and mathematics in\u00a0\u2026, 1991<\/li>\n<li>A model for polysilicon MOSFET's, AFM Anwar, AN Khondker,\u00a0IEEE Transactions on Electron Devices 34 (6), 1323-1330, 1987<\/li>\n<li>An analytical model for the threshold voltage of polysilicon MOSFET's, AFM Anwar, AN Khondker,\u00a0MRS Online Proceedings Library Archive 53, 1985<\/li>\n<\/ul>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>","protected":false},"excerpt":{"rendered":"<p>Si &amp; Related Devices Publications: An analytical model for the threshold voltage of polysilicon MOSFET, A.F.M. Anwar and A.N. Khondker, Materials Issues in Amorphous-Semiconductor Technology 53, 441, 2011 Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, RT Webster,\u00a0US Patent 7,700,419, 2010 Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, [&hellip;]<\/p>\n","protected":false},"author":66,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-frontpage.php","meta":{"footnotes":""},"class_list":["post-377","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/377","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/users\/66"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/comments?post=377"}],"version-history":[{"count":4,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/377\/revisions"}],"predecessor-version":[{"id":402,"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/pages\/377\/revisions\/402"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/anwar-research\/wp-json\/wp\/v2\/media?parent=377"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}