{"id":4,"date":"2017-01-13T21:31:07","date_gmt":"2017-01-13T21:31:07","guid":{"rendered":"http:\/\/www.ee.uconn.edu\/john-e-ayers\/?page_id=4"},"modified":"2026-04-07T17:10:33","modified_gmt":"2026-04-07T17:10:33","slug":"home","status":"publish","type":"page","link":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/","title":{"rendered":"Home"},"content":{"rendered":"<p style=\"text-align: justify;\"><b>\u00a0<\/b><\/p>\n<div id=\"attachment_14\" style=\"width: 310px\" class=\"wp-caption alignnone\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-14\" class=\"size-medium wp-image-14\" src=\"http:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-content\/uploads\/sites\/11\/2019\/03\/Ayers190321a005-300x199.jpg\" alt=\"\" width=\"300\" height=\"199\" srcset=\"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-content\/uploads\/sites\/11\/2019\/03\/Ayers190321a005-300x199.jpg 300w, https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-content\/uploads\/sites\/11\/2019\/03\/Ayers190321a005-768x509.jpg 768w, https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-content\/uploads\/sites\/11\/2019\/03\/Ayers190321a005-1024x678.jpg 1024w, https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-content\/uploads\/sites\/11\/2019\/03\/Ayers190321a005-624x413.jpg 624w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><p id=\"caption-attachment-14\" class=\"wp-caption-text\">John Ayers on March 21, 2019. (Peter Morenus\/UConn Photo)<\/p><\/div>\n<p style=\"text-align: justify;\"><b>\u00a0<\/b><\/p>\n<p style=\"text-align: justify;\"><b>John E. Ayers<\/b><br \/>\nAssociate Professor<br \/>\nOffice: ITE 461<br \/>\nPhone: (860) 486-2207<br \/>\nEmail:\u00a0<a href=\"mailto:jayers@engr.uconn.edu\">jayers@engr.uconn.edu<\/a><\/p>\n<p style=\"text-align: justify;\"><strong>Personal Page:\u00a0<a href=\"http:\/\/www.engr.uconn.edu\/~jayers\">http:\/\/www.engr.uconn.edu\/~jayers<\/a><\/strong><\/p>\n<p style=\"text-align: justify;\"><strong>Semiconductor Materials Research Group\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0<\/strong><\/p>\n<p style=\"text-align: justify;\"><strong>Education:<\/strong><\/p>\n<ul>\n<li>Ph.D., Rensselaer Polytechnic Institute, 1990.<\/li>\n<li>M.S., Rensselaer Polytechnic Institute, 1987.<\/li>\n<li>B.S.,\u00a0University of Maine, 1984.<\/li>\n<\/ul>\n<p style=\"text-align: justify;\"><strong>Experience:<\/strong><\/p>\n<ul>\n<li>2015 &#8211; present: Chief Scientist, Epitax Engineering<\/li>\n<li>1996-present: Associate Professor, University of Connecticut<\/li>\n<li>1999-2006: \u00a0Associate Department Head,\u00a0ECE, \u00a0University of Connecticut<\/li>\n<li>1990-1996: Assistant Professor, University of Connecticut<\/li>\n<li>1987-1988: Research Associate, Philips Laboratories, Briarcliff Manor, NY<\/li>\n<li>1984: Test Engineer, National Semiconductor, South Portland, ME<\/li>\n<li>1982-1983: Technician, Fairchild Semiconductor, South Portland, ME<\/li>\n<\/ul>\n<p style=\"text-align: justify;\"><strong>Professional Activities:<\/strong><\/p>\n<ul>\n<li>Associate Editor, Journal of Electronic Materials, 2015 \u2013 present<\/li>\n<li>Editor, Cogent Engineering, 2016 &#8211; present<\/li>\n<li>Lead Organizer, Symposium on Semiconductor Heterostructures, Materials Science and Technology Conference, 2011 \u2013 present<\/li>\n<li>Nanotechnology Consultant, Applied Materials Inc., 2015 &#8211; present<\/li>\n<li>Lead Organizer, Symposium on Semiconductor Heterostructures, American Vacuum Society Meeting, 2012-2013<\/li>\n<li>Guest Editor, Special Issue on Semiconductor Heterostructures, Journal of Electronic Materials, 2012.<\/li>\n<\/ul>\n<p style=\"text-align: justify;\"><strong>Research Interests:<\/strong><br \/>\nHeteroepitaxial growth of mismatched semiconductors; characterization of epitaxial structures,\u00a0and defect engineering in heteroepitaxial\u00a0materials.<\/p>\n<p><strong>Peer Reviewing \u2013 Funding Agencies<\/strong><\/p>\n<ul>\n<li>National Science Foundation MIP Review Panel, June 2015<\/li>\n<li>NASA Postdoctoral Program Review, July 2014<\/li>\n<li>NASA Postdoctoral Program Review, March 2014<\/li>\n<li>National Science Foundation SBIR Phase I Review Panel, January 2011<\/li>\n<li>National Science Foundation SBIR Phase I Review Panel, August 2010<\/li>\n<li>National Science Foundation SBIR Phase I Review Panel, March 2010<\/li>\n<\/ul>\n<p><strong>Peer Reviewing &#8211; Journals:<\/strong><\/p>\n<ul>\n<li>ACS Applied Materials &amp; Interfaces<\/li>\n<li>Applied Physics A<\/li>\n<li>Applied Physics Letters<\/li>\n<li>Applied Physics Letters Materials<\/li>\n<li>Applied Surface Science<\/li>\n<li>IEEE Transactions on Electron Devices<\/li>\n<li>International Journal of High-Speed Electronics and Systems<\/li>\n<li>Journal of Applied Physics<\/li>\n<li>Journal of Computational Chemistry<\/li>\n<li>Journal of Crystal Growth<\/li>\n<li>Journal of Crystal Growth and Design<\/li>\n<li>Journal of Electronic Materials<\/li>\n<li>Journal of Low-Power Electronics and Applications<\/li>\n<li>Journal of Materials Science<\/li>\n<li>Journal of Physics: Condensed Matter<\/li>\n<li>Journal of Physics D<\/li>\n<li>Journal of Vacuum Science and Technology B<\/li>\n<li>Nanotechnology<\/li>\n<li>Scripta Materialia<\/li>\n<li>Semiconductor Science and Technology<\/li>\n<li>Surface Science<\/li>\n<\/ul>\n<p><strong>Honors:<\/strong><\/p>\n<ul>\n<li>University of Connecticut Chapter of the American Association of University Professors Teaching Excellence: Career Award (2019).<\/li>\n<li>University of Connecticut Provost\u2019s Commendation for Excellence in Teaching: Fall 2017; Spring 2017; Fall 2016; Spring 2016; Fall 2015; Spring 2015; Fall 2014; Spring 2014.<\/li>\n<li>Electrical and Computer Engineering Outstanding Teaching Award, 2016-2017.<\/li>\n<li>Electrical and Computer Engineering Outstanding Teaching Award, 2010-2011.<\/li>\n<li>Electrical and Computer Engineering IEEE\/HKN Best Teacher Award, 2006.<\/li>\n<li>University of Connecticut Student Organization Advisor Award, for serving as the faculty advisor to the student branch of the Institute of Electrical and Electronics Engineers (2004).<\/li>\n<li>Electrical and Computer Engineering Excellence in Teaching Award, 2003.<\/li>\n<li>University of Connecticut Teaching Fellow, 1999-2000.<\/li>\n<li>School of Engineering Outstanding Teaching Award, University of Connecticut, 1999.<\/li>\n<li>IBM Fellow, 1988-1990.<\/li>\n<li>American Electronics Association \/ Analog Devices Fellow, 1984-1988.<\/li>\n<\/ul>\n<p><strong>Books:<\/strong><\/p>\n<p>[8] John Ayers, <u>Runner<\/u> (Kindle Direct Publishing, Middletown, DE, Dec. 2018). ISBN-13: 978-1717724335.<\/p>\n<p>[7] John E. Ayers, Tedi Kujofsa, Paul Rago, and Johanna Raphael, <u>Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second <\/u>Edition, CRC Press, Boca Raton, FL, 2016. ISBN-13: 978-1482254358.<\/p>\n<p>[6] John E. Ayers, <u>Solution Manual for Digital Integrated Circuits: Analysis and Design, Second Edition<\/u>, CRC Press, Boca Raton, FL, 2009.<\/p>\n<p>[5] John E. Ayers, <u>Digital Integrated Circuits: Analysis and Design, Second Edition<\/u>, CRC Press, Boca Raton, FL, 2009. ISBN-13: 978-1420069877.<\/p>\n<p>[4] John E. Ayers, <u>Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization<\/u>, CRC Press, Boca Raton, FL, 2007.<\/p>\n<p>[3]\u00a0 John E. Ayers, <u>Instructor\u2019s Supplement for<\/u> <u>Digital Integrated Circuits: Analysis and Design<\/u>, CRC Press, Boca Raton, FL, 2003.<\/p>\n<p>[2]\u00a0 John E. Ayers, <u>Solution Manual for<\/u> <u>Digital Integrated Circuits: Analysis and Design<\/u>, CRC Press, Boca Raton, FL, 2003.<\/p>\n<p>[1]\u00a0 John E. Ayers, <u>Digital Integrated Circuits: Analysis and Design<\/u>, CRC Press, Boca Raton, FL, 2003.<\/p>\n<p><strong>Book Chapters:<\/strong><\/p>\n<p>[2] J. E. Ayers, \u201cLow Temperature and Metamorphic Buffer Layers,\u201d in <u>The Handbook of Crystal Growth<\/u>, second edition, edited by Tatau Nishinaga, Peter Rudolph, and Thomas Kuech, Elsevier, 2014.<\/p>\n<p>[1] J. E. Ayers, J. W. Steadman,and B. M. Wilamowski, \u201cActive Filters,\u201d in <u>The Electrical Engineering Handbook: Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar, 3<sup>rd<\/sup> Edition<\/u>, edited by Richard C. Dorf, CRC Press, Boca Raton, FL, 2005.<\/p>\n<p><strong>Journal Papers:<\/strong><\/p>\n<p>[89] Md T. Islam, X. Chen, T. Kujofsa, and J. E. Ayers, \u201cThreading dislocations in metamorphic semiconductor buffer layers containing chirped superlattices,\u201d Intl. J. High Speed Electron. Syst., in press (2019).<\/p>\n<p>[88] M. Cai, T. Kujofsa, X. Chen, Md T. Islam, and J. E. Ayers, \u201cOptimization of graded buffer layers for metamorphic semiconductor devices,\u201d Intl. J. High Speed Electron. Syst., in press (2019).<\/p>\n<p>[87] M. Cai, T. Kujofsa, X. Chen, Md T. Islam, and J. E. Ayers, \u201cInteraction length for dislocations in compositionally-graded heterostructures,\u201d Intl. J. High Speed Electron. Syst., in press (2019).<\/p>\n<p>[86] Md T. Islam, X. Chen, T. Kujofsa, and J. E. Ayers, \u201cChirped superlattices as adjustable strain platforms for metamorphic semiconductor devices,\u201d Intl. J. High Speed Electron. Syst., 27, 1840009 (2018). doi: 10.1142\/S0129156418400098<\/p>\n<p>[85] F. A. Althowibi and J. E. Ayers, \u201cDynamical x-ray diffraction analysis of a GaAs\/In<sub>0.3<\/sub>Ga<sub>0.7<\/sub>As single quantum well grown on a GaAs (001) substrate,\u201d Intl. J. High Speed Electron. Syst., 27, 1840010 (2018). doi: 10.1142\/S0129156418400104<\/p>\n<p>[84] T. Kujofsa, Y. Song, and J. E. Ayers, \u201cModel for threading dislocations in metamorphic tandem solar cells on GaAs (001) substrates,\u201d Mater. Research Express, 5, 025909 (2018). doi: 10.1088\/2053-1591\/aaac41<\/p>\n<p>[83] Y. Song, T. Kujofsa, and J. E. Ayers, \u201cThreading Dislocations in InGaAs\/GaAs (001) Buffer Layers for Metamorphic High Electron Mobility Transistors,\u201d J. Electron. Mater., 47, 3474-3482 (2018). doi: 10.1007\/s11664-018-6187-8<\/p>\n<p>[82] X. Chen, Md T. Islam, T. Kujofsa, and J. E. Ayers, \u201cChirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices,\u201d ECS Trans., 80, 981 (2017). doi: 10.1149\/08010.0981ecst<\/p>\n<p>[81] F. A. Althowibi and J. E. Ayers, \u201cCharacterization of Dislocations in Semiconductor Heterostructures Using X-Ray Rocking Curve Pendell\u00f6sung,\u201d J. Electron. Mater., 47, 1158-1166 (2017). doi: 10.1007\/s11664-017-5895-9<\/p>\n<p>[80] T. Kujofsa and J. E. Ayers, \u201cElectric circuit model analogy for equilibrium lattice relaxation in semiconductor heterostructructures,\u201d J. Electron. Mater., 47, 173-187 (2017). doi: 10.1007\/s11664-017-5750-z<\/p>\n<p>[79] F. A. Althowibi and J. E. Ayers, \u201cSimulated x-ray diffraction from pseudomorphic GaAs\/In<sub>0.3<\/sub>Ga<sub>0.7<\/sub>As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates,\u201d J. Vac. Sci. Technol. B, 35, 03D108 (2017). doi: 10.1116\/1.4981015<\/p>\n<p>[78] F. A. Althowibi and J. E. Ayers, \u201cDynamical x-ray diffraction analysis of triple-junction solar cells on germanium (001) substrates,\u201d Intl. J. High Speed Electron. Syst., 26, 1740011 (2017).\u00a0 doi: 10.1142\/S0129156417400110<\/p>\n<p>[77] T. Kujofsa and J. E. Ayers, \u201cCritical layer thickness: Theory and experiment in the ZnSe \/ GaAs (001) material system,\u201d Intl. J. High Speed Electron. Syst., 26, 1740020 (2017). doi: 10.1142\/S0129156417400201<\/p>\n<p>[76] F. A. Althowibi and J. E. Ayers, \u201cX-ray analysis of metamorphic In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/In<sub>y<\/sub>Ga<sub>1-y<\/sub>As superlattices on GaAs (001) Substrates,\u201d J. Vac. Sci. Technol. B, 35, 03D105 (2017). doi: 10.1116\/1.4979323<\/p>\n<p>[75] T. Kujofsa and J. E. Ayers, \u201cProgression of strain relaxation in linearly-graded GaAs<sub>1-y<\/sub>P<sub>y<\/sub>\/GaAs (001) epitaxial layers approximated by a finite number of sublayers,\u201d Intl. J. High Speed Electron. Syst., 26, 1740007 (2017). doi: 10.1142\/S0129156417400079<\/p>\n<p>[74] P. B. Rago and J. E. Ayers, &#8220;Mosaic Crystal Model for Dynamical X-ray Diffraction from Step-Graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>\/As and In<sub>x<\/sub>Al<sub>1-x<\/sub>As \/ GaAs (001) Metamorphic Buffers and Device Structures,&#8221; Intl. J. High Speed Electron. Syst., 26, 1740019 (2017). doi: 10.1142\/S0129156417400195<\/p>\n<p>[73] T. Kujofsa and J. E. Ayers, \u201cStrain compensation in a semiconducting device structure using an intentionally mismatched uniform buffer layer,\u201d Semicond. Sci. Technol., 31, 125005 (2016). doi:10.1088\/0268-1242\/31\/12\/125005<\/p>\n<p>[72] T. Kujofsa and J. E. Ayers, \u201cElectric circuit model for strained-layer epitaxy,\u201d Semicond. Sci. Technol., 31, 115014 (2016).<\/p>\n<p>[71] T. Kujofsa, S. Cheruku, D. Sidoti, S. Xhurxhi, F. Obst, J. P. Correa, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, \u201cApparent critical layer thickness in ZnSe\/GaAs (001) heterostructures and the role of experimental resolution,\u201d J. Vac. Sci. Technol. B, 34, 051201 (2016).<\/p>\n<p>[70] T. Kujofsa and J. E. Ayers, \u201cDynamics of kinetically limited strain and threading dislocations in temperature- and compositionally graded ZnSSe\/GaAs (001) metamorphic heterostructures,\u201d J. Electron. Mater., 45, 4580 (2016).<\/p>\n<p>[69] F. Althowibi, P. B. Rago, and J. E. Ayers, \u201cX-ray diffraction analysis for step- and linearly-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>\/GaAs (001) heterostructures using various hkl reflections,\u201d J. Vac. Sci. Technol. B, 34, 041209 (2016). doi: 10.1116\/1.4949517<\/p>\n<p>[68] T. Kujofsa and J. E. Ayers, &#8220;Equilibrium lattice relaxation and misfit dislocations\u00a0in step-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and In<sub>x<\/sub>Al<sub>1-x<\/sub>As\/GaAs (001) metamorphic buffer layers,&#8221; J. Electron. Mater., 45, 2831 (2016). doi: 10.1007\/s11664-016-4377-9<\/p>\n<p>[67] T. Kujofsa and J. E. Ayers, \u201cResolution of x-ray rocking curve measurements made with finite counting statistics,\u201d Int. J. Hi. Spe. Ele. Syst., 24, 1550007 (2015). <a href=\"https:\/\/doi\">doi<\/a>: 10.1142\/S012915641550007X<\/p>\n<p>[66] T. Kujofsa and J. E. Ayers, \u201cEquilibrium lattice relaxation and misfit dislocations in continuously- and step-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and GaAs<sub>1-y<\/sub>P<sub>y<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d Intl. J. High Speed Electron. Syst., 24, 1520009 (2015). doi 10.1142\/S0129156415200098<\/p>\n<p>[65] E. Suarez, P.-Y. Chan, M. Gogna, J. E. Ayers, and F. C. Jain, \u201cFabrication and simulation of InGaAs field-effect transistors with II-VI tunneling insulators,\u201d J. Electron. Mater., 44, 3064 (2015). doi 10.1007\/s11664-015-3769-6<\/p>\n<p>[64] T. Kujofsa and J. E. Ayers, \u201cEvolution of Kinetically-Limited Lattice Relaxation and\u00a0 Threading Dislocations in Temperature-Graded\u00a0 ZnSe\/GaAs (001) Metamorphic Heterostructures,\u201d J. Electron. Mater., 44, 3030 (2015).<\/p>\n<p>[63] P. B. Rago and J. E. Ayers, \u201cComparison of the phase-invariant and mosaic crystal models for dynamical x-ray diffraction from metamorphic In<sub>x<\/sub>Ga<sub>1-x<\/sub>As \/ GaAs (001) structures,\u201d J. Vac. Sci. Technol. B, 33, 021204 (2015).<\/p>\n<p>[62] T. Kujofsa and J. E. Ayers, \u201cComparison of continuously- and step-graded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d J. Electron. Mater., 43, 3047 (2014). \u00a0doi: 10.1007\/s11664-014-3205-3<\/p>\n<p>[61] T. Kujofsa and J. E. Ayers, \u201cThreading dislocations in S-graded ZnS<sub>x<\/sub>Se<sub>1-x<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d Int. J. High Speed Electron. Sys., 23, 1420005 (2014). doi: 10.1142\/S0129156414200055<\/p>\n<p>[60] E. Suarez, P.-Y. Chan, M. Gogna, J. E. Ayers, E. Heller, and F. C. Jain, \u201cZnS\/ZnMgSeTe\/ZnS II-VI energy barrier for InGaAs substrates,\u201d Intl. J. High Speed Electron. Sys., 23, 1450013 (2014). \u00a0doi: 10.1142\/S012915641450013X.<\/p>\n<p>[59] J. Raphael, B. Bertoli, and J. E. Ayers, \u201cEquilibrium strain and dislocation density in nitride based heterostructures,\u201d Intl. J. High Speed Electron. Sys., 23, 1450009 (2014). doi: 10.1142\/S0129156414500098<\/p>\n<p>[58] T. Kujofsa and J. E. Ayers, \u201cLattice relaxation and misfit dislocations in nonlinearly graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and GaAs<sub>1-y<\/sub>P<sub>y<\/sub>\/GaAs (001) Metamorphic Buffer Layers,\u201d J. Vac. Sci. Technol. B, 32, 031205 (2014).<\/p>\n<p>[57] T. Kujofsa, S. Cheruku, W. Yu, B. Outlaw, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, \u201cRelaxation dynamics and threading dislocations in ZnSe and ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) heterostructures,\u201d J. Electron. Mater., 42, 2764 (2013).<\/p>\n<p>[56] T. Kujofsa and J. E. Ayers, \u201cDesign of dislocation-compensated ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) heterostructures,\u201d J. Electron. Mater., 42, 3034 (2013).<\/p>\n<p>[55] T. Kujofsa, A. Antony, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, S. Cheruku, J. P. Correa, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, \u201cDesign of S-graded buffer layers for metamorphic ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) semiconductor devices,\u201d J. Electron. Mater., 42, 3408 (2013)<\/p>\n<p>[54] E. Suarez, P.-Y. Chan, M. Lingalugari, J. E. Ayers, E. Heller, and F. C. Jain, \u201cQuantum dot gate three-state and nonvolatile memory field-effect transistors using a ZnS\/ZnMgS\/ZnS heteroepitaxial stack as a tunnel insulator on silicon-on-insulator substrates,\u201d J. Electron. Mater., 42, 3275 (2013).<\/p>\n<p>[53] P. Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller, E. K. Heller, J. E. Ayers, and F. C. Jain, \u201cFabrication and Simulation of an indium gallium arsenide quantum-dot-gate field effect transistor (QDG-FET) with ZnMgS as a tunnel gate insulator,\u201d J. Electron. Mater., 42, 3259 (2013).<\/p>\n<p>[52] P. B. Rago, F. C. Jain, and J. E. Ayers, &#8220;The Effect of Epilayer Tilt on Dynamical X-Ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities,&#8221; J. Electron. Mater., 42, 3066 (2013).<\/p>\n<p>[51] T. Kujofsa, W. Yu, S. Cheruku, B. Outlaw, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain and J. E. Ayers, \u201cPlastic Flow and Dislocation Compensation in ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Heterostructures,\u201d J. Electron. Mater., 41, 2993 (2013).<\/p>\n<p>[50] P. B. Rago and J. E. Ayers, \u201cDynamical x-ray diffraction from In<sub>x<\/sub>Ga<sub>1-x<\/sub>As heterostructures with dislocations,\u201d J. Electron. Mater., 42, 2450 (2013).<\/p>\n<p>[49] P.-Y. Chan, E. Suarez, M. Gogna, B. I. Miller, E. K. Heller, J. E. Ayers, and F. C. Jain, \u201cIndium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II-VI Tunnel Insulators Showing Three-State Behavior,\u201d J. Electron. Mater., (2012). doi: 10.1007\/s1164-012-2176-5<\/p>\n<p>[48] P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, \u201cDynamical X-Ray Diffraction from ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Multilayers and Superlattices with Dislocations,\u201d J. Electron. Mater., 41, 2846 (2012). doi: 10.1007\/s11664-012-2012-y<\/p>\n<p>[47] S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, T. Kujofsa, S. Cheruku, J. P. Correa, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;S-Graded Buffer Layers for Lattice-Mismatched Heteroepitaxial Devices,&#8221; J. Electron. Mater.,\u00a040, 2348\u00a0(2011).<\/p>\n<p>[46] D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. P. Correa, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Initial Misfit Dislocations in a Graded Heteroepitaxial Layer,&#8221; J. Appl. Phys., 109, 1 (2011).<\/p>\n<p>[45] P. Shimpi, Y. Ding, E. Suarez, J. E. Ayers, and P.-X. Gao, &#8220;Annealing induced nanostructure and photoluminescence property evolution in solution-processed Mg-alloyed ZnO nanowires,&#8221; Appl. Phys. Lett., 97, 103104 (2010).<\/p>\n<p>[44] E. Suarez, M. Gogna, F. Al-Amoody, S. Karmakar, J. E. Ayers, E. Heller, and F. C. Jain, &#8220;Nonvolatile Memories using Quantum Dot (QD) Floating Gate Assembled on II-VI Tunnel Insulator,&#8221; J. Electron.\u00a0Mat.,\u00a039, 903\u00a0(2010).<\/p>\n<p>[43] B. Bertoli, D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. Reed, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Equilibrium strain and dislocation density in exponentially graded Si(1-x)Ge(x)\/Si (001),&#8221; J. Appl. Phys., 108, 113525 (2010).<\/p>\n<p>[42] D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. Reed, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Critical layer thickness in exponentially-graded heteroepitaxial layers,&#8221; J. Electron. Mat.,\u00a039, 1140\u00a0(2010).<\/p>\n<p>[41] J. F. Ocampo, B. Bertoli, P. B. Rago, E. N. Suarez, D. Shah, F. C. Jain, and J. E. Ayers, &#8220;Asymmetric Dislocation Densities in Forward-Graded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub> \/ GaAs (001) Heterostructures,&#8221; J. Electron.\u00a0Mat.,\u00a039, 391\u00a0(2010).<\/p>\n<p>[40] B. Yarlagadda, A. Rodriguez, P. Li, R. Velampati, J. E. Ayers, and F. C. Jain, &#8220;A quantitative model for the interpretation of RAV (Rocking Curve Azimuthal Variation) results from heteroepitaxial semiconductor layers,&#8221; J. Cryst. Growth,\u00a0312, 886\u00a0(2010).<\/p>\n<p>[39] B. Bertoli, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Dislocations and Strain Relief in Reverse-Graded Semiconductor Layers,&#8221; Semicond. Sci. Technol.,\u00a024,125006 (2009).<\/p>\n<p>[38] B. Bertoli, E. N. Suarez, J. E. Ayers, and F. C. Jain, &#8220;Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with\u00a0arbitrary composition profiles,&#8221; J. Appl. Phys., 106, 073519 (2009).<\/p>\n<p>[37] J. F. Ocampo, E. Suarez, D. Shah, P. B. Rago, F. C. Jain, and J. E. Ayers, &#8220;Overshoot graded layers for defect engineering in heteroepitaxial semiconductor structures,&#8221; J. Electron. Mat.,\u00a037, 1035\u00a0(2008).<\/p>\n<p>[36] J. E. Ayers, &#8220;Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions,&#8221; J. Electron. Mat.,\u00a037, 1511\u00a0(2008).<\/p>\n<p>[35] B. Yarlagadda, A. Rodriguez, P. Li, R. Velampati, J. F. Ocampo, E. N. Suarez, P. B. Rago, D. Shah, J. E. Ayers, and F. C. Jain, &#8220;X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors,&#8221; Appl. Phys. Lett., 92, 202103 (2008).<\/p>\n<p>[34] J. E. Ayers, &#8220;Critical layer thickness in compositionally-graded semiconductor layers with non-zero interfacial mismatch,&#8221; Semicond. Sci. Technol., 23, 045018 (2008).<\/p>\n<p>[33] J. E. Ayers, &#8220;Multiple Critical Layer Thicknesses in Retro-Graded Heterostructures,&#8221; Appl. Phys. Lett., <u>92<\/u>, 102104 (2008).<\/p>\n<p>[32] B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, and J. E. Ayers, \u201cElastic Strains in Heteroepitaxial ZnSe<sub>1-x<\/sub>Te<sub>x<\/sub> on InGaAs\/InP (001),\u201d J. Electron. Mat., <u>35<\/u>, 1327-1332 (2006).<\/p>\n<p>[31] P. Li, A. Rodriguez, B. Yarlagadda, R. Velampati, J. E. Ayers, and F. C. Jain, \u201cElectrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices,\u201d Solid State Electron., 49, 2002-2005 (2005).<\/p>\n<p>[30] D. W. Parent, A. Rodriguez, J. E. Ayers, and F. C. Jain, \u201cPhotoassisted MOVPE grown (n)ZnSe\/(p+)GaAs heterojunction solar cells,\u201d Solid-State Electron., 47, 595 (2003).<\/p>\n<p>[29] X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, \u201cPatterned heteroepitaxial processing applied to ZnSe and ZnS<sub>0.02<\/sub>Se<sub>0.98<\/sub> on GaAs (001),\u201d J. Appl. Phys., 91, 3912 (2002).<\/p>\n<p>[28] X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, \u201cA Novel Approach for the Complete Removal of Threading Dislocations from ZnSe on GaAs (001),\u201d J. Electronic Materials, 30, 667 (2001).<\/p>\n<p>[27] D. W. Parent, A. Rodriguez, and F. C. Jain, \u201cThe Photoassisted MOVPE Growth of ZnMgSSe,\u201d J. Cryst. Growth, 224, 212 (2001).<\/p>\n<p>[26] D. W. Parent, A. Rodriguez, P. Li, X. G. Zhang, G. Zhao, J. E. Ayers, and F. C. Jain, &#8220;The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan,&#8221; J. Electron. Mat., 29, 713 (2000).<\/p>\n<p>[25] X. G. Zhang, A. Rodriguez, X. Wang, P. Li, F. C. Jain, and J. E. Ayers, \u201cComplete Removal of Threading Dislocations from Mismatched Layers by Patterned Heteroepitaxial Processing,\u201d Appl. Phys. Lett., 77, 2524 (2000).<\/p>\n<p>[24] X. G. Zhang, D. W. Parent, P. Li, A. Rodriguez, G. Zhao, J. E. Ayers, and F. C. Jain, &#8220;X-Ray Rocking Curve Analysis of Tetragonally Distorted Ternary Semiconductors on Mismatched (001) Substrates,&#8221; J. Vac. Sci. Technol. B, 18, 1375 (2000).<\/p>\n<p>[23] X. G. Zhang, P. Li, D. W. Parent, G. Zhao, J. E. Ayers, and F. C. Jain, \u201cComparison of x-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication,\u201d J. Electron. Mat., 28, 553 (1999).<\/p>\n<p>[22] X. G. Zhang, P. Li, G. Zhao, D. W. Parent, F. C. Jain, and J. E. Ayers, \u201cRemoval of threading dislocations from patterned heteroepitaxial semiconductors by glide,\u201d J. Electron. Mat., 27, 1248 (1998).<\/p>\n<p>[21] K. X. Bao, R. Mo, X. G. Zhang, S. Kalisetty, M. Gokhale, J. Robinson, G. Zhao, J. E. Ayers, and F. C. Jain, \u201cCompositional control of CdZnSe grown by photoassisted organometallic vapor phase epitaxy,\u201d J. Cryst. Growth, 170, 497 (1997).<\/p>\n<p>[20] X. G. Zhang, S. Kalisetty, J. Robinson, G. Zhao, D. W. Parent, J. E. Ayers, and F. C. Jain, \u201cStructural properties of ZnSSe\/ZnSe\/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy,\u201d J. Cryst. Growth, 174, 726 (1997).<\/p>\n<p>[19] D. W. Parent, S. Kalisetty, X. G. Zhang, G. Zhao, W. Zappone, J. Robinson, E. Heller, J. E. Ayers, and F. C. Jain, \u201cA comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE,\u201d J. Electron. Mat., 26, 710 (1997).<\/p>\n<p>[18] X. G. Zhang, S. Kalisetty, J. Robinson, G. Zhao, D. W. Parent, J. E. Ayers, and F. C. Jain, \u201cStructural properties of ZnSSe\/ZnSe\/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy,\u201d J. Electron. Mat., 26, 697 (1997).<\/p>\n<p>[17] M. R. Gokhale, K. X. Bao, P. D. Healey, F. C. Jain, and J. E. Ayers, \u201cRole of cadmium in enhancing optical properties and chlorine doping of photo-assisted OMVPE-grown ZnSe,\u201d J. Electron. Mat., 25, 207 (1996).<\/p>\n<p>[16] S. Kalisetty, M. Gokhale, K. Bao, J. E. Ayers, and F. C. Jain, \u201cThe influence of impurities on the dislocation behavior in heteroepitaxial ZnSe on GaAs,\u201d Appl. Phys. Lett., 68, 1693 (1996).<\/p>\n<p>[15] P. D. Healey and J. E. Ayers, \u201cThe instrumental broadening function of the Bartels five-crystal x-ray diffractometer,\u201d Acta Cryst., <u>A52<\/u>, 245 (1996).<\/p>\n<p>[14] M. R. Gokhale, K. X. Bao, P. D. Healey, F. C. Jain, and J. E. Ayers, \u201cFactors influencing low-temperature photo-assisted OMVPE growth of ZnSe,\u201d J. Cryst. Growth, 165, 25 (1996).<\/p>\n<p>[13] P. D. Healey, K. Bao, M. Gokhale, J. E. Ayers, and F. C. Jain, \u201cX-ray determination of the dislocation densities in semiconductor crystals using a Bartels five-crystal diffractometer,\u201d Acta. Cryst. Sec. A, A51, 498 (1995).<\/p>\n<p>[12] K. Bao, P. D. Healey, M. Gokhale, J. E. Ayers, and F. C. Jain, \u201cProperties of vapor phase epitaxial zinc selenide codoped with cadmium and chlorine,\u201d Appl. Phys. Lett., 67, 1098 (1995).<\/p>\n<p>[11] J. E. Ayers, \u201cNew model for the thickness and mismatch dependencies of threading dislocation densities in mismatched heteroepitaxy,\u201d J. Appl. Phys., 78, 3724 (1995).<\/p>\n<p>[10] J. E. Ayers, \u201cThe measurement of threading dislocation densities in semiconductor crystals by x-ray diffraction,\u201d J. Cryst. Growth, 135, 71 (1994).<\/p>\n<p>[9] J. E. Ayers and L. J. Schowalter, \u201cComment on \u2018Measurement of the activation barrier to nucleation of dislocations in thin films,\u2019 \u201c Phys. Rev. Lett., 72, 4055 (1994).<\/p>\n<p>[8] J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, \u201cPost-growth thermal annealing of GaAs on Si (001) grown by organometallic vapor phase epitaxy,\u201d J. Cryst. Growth, 125, 329 (1992).<\/p>\n<p>[7] J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, \u201cCrystallographic tilting of heteroepitaxial layers,\u201d J. Cryst. Growth, 113, 430 (1991).<\/p>\n<p>[6] L. J. Schowalter, J. E. Ayers, S. K. Ghandhi, S. Hashimoto, W. M. Gibson, F. K. LeGoues, and P. A. Claxton, \u201cStrain in Epitaxial GaAs on CaF<sub>2<\/sub>\/Si (111),\u201d J. Vac. Sci Technol. B, 8, 246 (1990).<\/p>\n<p>[5] J. Ayers and S. K. Ghandhi, \u201cThe epitaxy of germanium on gallium arsenide,\u201d J. Cryst. Growth, 89, 371 (1988).<\/p>\n<p>[4] J. Ayers and J. Ladell, \u201cThe spectral widths of the Cu k alpha lines,\u201d Phys. Rev. A, 37, 2404 (1988).<\/p>\n<p>[3] I. B. Bhat, K. Patel, N. R. Taskar, J. E. Ayers, and S. K. Ghandhi, \u201cX-ray diffraction studies of CdTe grown on InSb,\u201d J. Cryst. Growth, 88, 23 (1988).<\/p>\n<p>[2] S. K. Ghandhi and J. E. Ayers, \u201cStrain and misorientation in GaAs grown on Si (001) by organometallic epitaxy,\u201d Appl. Phys. Lett., 53, 1204 (1988).<\/p>\n<p>[1] S. K. Ghandhi and J. E. Ayers, \u201cThe chemical etching of germanium, J. Electrochem. Soc., 135, 2053 (1988).<\/p>\n<p>&nbsp;<\/p>\n<p>Google Scholar Citations: <a href=\"http:\/\/scholar.google.com\/citations?user=BaGZ8s4AAAAJ\">http:\/\/scholar.google.com\/citations?user=BaGZ8s4AAAAJ<\/a><\/p>\n<p>&nbsp;<\/p>\n<p><strong>Conference Presentations and Proceedings:<\/strong><\/p>\n<p>[110] T. Kujofsa, M. Cai, Md T. Islam, and J. E. Ayers, \u201cTheoretical optimization of graded semiconductor buffer layers,\u201d Materials Science and Technology Conference, Columbus, OH (Oct. 14-18, 2018).<\/p>\n<p>[109] Md T. Islam, X. Chen, T. Kujofsa, and J. E. Ayers, \u201cComparison of chirped and unchirped superlattices as dislocation filters for metamorphic InGaAs\/GaAs (001) devices,\u201d Materials Science and Technology Conference, Columbus, OH (Oct. 14-18, 2018).<\/p>\n<p>[108] T. Kujofsa and J. E. Ayers, \u201cPlastic flow in lattice-mismatched III-V heterostructures,\u201d Materials Science and Technology Conference, Columbus, OH (Oct. 14-18, 2018).<\/p>\n<p>[107] M. Cai, T. Kujofsa, X. Chen, Md T. Islam, and J. E. Ayers, \u201cInteraction length for dislocations in compositionally-graded and multilayered semiconductor heterostructures,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Orange, CT (April 4, 2018).<\/p>\n<p>[106] Md T. Islam, X. Chen, T. Kujofsa, and J. E. Ayers, \u201cThreading dislocations in metamorphic semiconductor buffer layers containing chirped superlattices,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Orange, CT (April 4, 2018).<\/p>\n<p>[105] T. Kujofsa, M. Cai, X. Chen, Md T. Islam, and J. E. Ayers, \u201cOptimization of graded buffer layers for metamorphic semiconductor devices,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Orange, CT (April 4, 2018).<\/p>\n<p>[104] X. Chen, Md T. Islam, T. Kujofsa, and J. E. Ayers, \u201cComparison of chirped and unchirped superlattices as buffers for metamorphic InGaAs\/GaAs (001) devices,\u201d IEEE MIT Undergraduate Research Technology Conference, Cambridge, MA (Nov. 3-5, 2017).<\/p>\n<p>[103] T. Kujofsa and J. E. Ayers, \u201cThermal cycle annealing and its effect on the threading dislocation density in GaAs\/Si (001),\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 8-12, 2017).<\/p>\n<p>[102] T. Kujofsa and J. E. Ayers, \u201cApplication of a circuit model for strained epitaxy to continuously-graded layers with exponential profiles,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 8-12, 2017).<\/p>\n<p>[101] F. A. Althowibi and J. E. Ayers, \u201cX-ray dynamical diffraction analysis of Al<sub>0.4<\/sub>Ga<sub>0.6<\/sub>As\/GaAs\/In<sub>0.15<\/sub>Ga<sub>0.85<\/sub>As separate confinement heterostructure (SCH) laser grown on a GaAs (001) substrate,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 8-12, 2017).<\/p>\n<p>[100] Y. Song, T. Kujofsa, and J. E. Ayers, \u201cBi-parabolic graded buffer layers for metamorphic devices,\u201d 232<sup>nd<\/sup> Meeting of the Electrochemical Society, National Harbor, MD (Oct. 1-5, 2017).<\/p>\n<p>[99] X. Chen, Md T. Islam, T. Kujofsa, and J. E. Ayers, \u201cComparison of chirped superlattices and linearly-graded buffer layers as adjustable-strain platforms for metamorphic InGaAs\/GaAs (001) devices,\u201d 232<sup>nd<\/sup> Meeting of the Electrochemical Society, National Harbor, MD (Oct. 1-5, 2017).<\/p>\n<p>[98] Md T. Islam, X. Chen, T. Kujofsa, and J. E. Ayers, \u201cChirped superlattices as adjustable strain platforms for metamorphic semiconductor devices,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 5, 2017).<\/p>\n<p>[97] T. Kujofsa and J. E. Ayers, \u201c\u201dMetamorphic buffer layers with bi-parabolic compositional profiles,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 5, 2017).<\/p>\n<p>[96] F. Althowibi and J. E. Ayers, \u201cDynamical x-ray diffraction analysis of a GaAs\/In<sub>0.3<\/sub>Ga<sub>0.7<\/sub>As\/GaAs single quantum well grown on a GaAs (001) substrate,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 5, 2017).<\/p>\n<p>[95] T. Kujofsa and J. E. Ayers, \u201cNovel electrical circuit model for the design of InGaAs\/GaAs (001) strained-layer superlattices,\u201d American Vacuum Society 63rd International Symposium and Exhibition, Nashville, TN (November 7-11, 2016).<\/p>\n<p>[94] F. Althowibi and J. E. Ayers, \u201cX-ray diffraction from pseudomorphic GaAs\/In<sub>0.3<\/sub>Ga<sub>0.7<\/sub>As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates,\u201d American Vacuum Society 63rd International Symposium and Exhibition, Nashville, TN (November 7-11, 2016).<\/p>\n<p>[93] F. Althowibi and J. E. Ayers, \u201cX-ray analysis of metamorphic In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/In<sub>y<\/sub>Ga<sub>1-y<\/sub>As superlattices on GaAs (001) substrates,\u201d American Vacuum Society 63rd International Symposium and Exhibition, Nashville, TN (November 7-11, 2016).<\/p>\n<p>[92] F. Althowibi and J. E. Ayers, \u201cX-ray rocking curve Pendellosung: a sensitive tool for the characterization of dislocations in pseudomorphic high electron mobility transistors,\u201d Materials Science and Technology Conference, Salt Lake City, UT (October 23-27, 2016).<\/p>\n<p>[91] T. Kujofsa and J. E. Ayers, \u201cElectrical circuit model for InGaAs\/GaAs (001) strained-layer heterostructures,\u201d Materials Science and Technology Conference, Salt Lake City, UT (October 23-27, 2016).<\/p>\n<p>[90] Y. Song, T. Kujofsa, and J. E. Ayers, \u201cThreading dislocations in InGaAs\/GaAs (001) buffer layers for metamorphic high electron mobility transistors,\u201d Materials Science and Technology Conference, Salt Lake City, UT (October 23-27, 2016).<\/p>\n<p>[89] Y. Song, T. Kujofsa, and J. E. Ayers, \u201cDesign of graded buffer layers for tandem solar cells on GaAs (001) substrates,\u201d Materials Science and Technology Conference, Salt Lake City, UT (October 23-27, 2016).<\/p>\n<p>[88] T. Kujofsa and J. E. Ayers, \u201cApplication of an electrical circuit model to study strain compensation in ZnSSe\/GaAs (001) heterostructures,\u201d U. S. Workshop on the Physics and Chemistry of II-VI Compounds, Baltimore, MD (October 17-19, 2016).<\/p>\n<p>[87] T. Kujofsa and J. E. Ayers, \u201cNew electrical circuit model for relaxation in strained-layer heteroepitaxy,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 6, 2016).<\/p>\n<p>[86] F. Althowibi and J. E. Ayers, \u201cDynamical x-ray diffraction analysis of triple-junction solar cells on Ge (001) substrates,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 6, 2016).<\/p>\n<p>[85] T. Kujofsa and J. E. Ayers, \u201cApparent critical layer thickness in ZnSe\/GaAs (001) heterostructures and the role of experimental resolution,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 6, 2016).<\/p>\n<p>[84] T. Kujofsa and J. E. Ayers, \u201cLattice Relaxation in Multilayered Si<sub>1-x<\/sub>Ge<sub>x<\/sub>\/Si (001) Metamorphic Heterostructures,\u201d American Vacuum Society 62th International Symposium and Exhibition, San Jose, CA (October 19-23, 2015).<\/p>\n<p>[83] T. Kujofsa and J. E. Ayers, \u201cThe Dynamics of Kinetically-Limited Strain and Threading Dislocation in Temperature- and Compositionally-Graded ZnSSe\/GaAs (001) Metamorphic Heterostructures,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Chicago, IL (October 7-9, 2015).<\/p>\n<p>[82] G. G.Gutierrez, N. Kulla, P. R. S. Vicente, T. Kujofsa, and J. E. Ayers<em>, \u201c<\/em>Misfit Dislocations and Strain in Inverted Metamorphic Triple-Junction Solar Cells on GaAs (001) Substrates,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[81] T. Kujofsa and J. E. Ayers, \u201cStrain Relaxation and Threading Dislocations of ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Heterostructures Involving Super-Lattice Metamorphic Buffer Layers,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[80]\u00a0 F. A. Althowibi, P. B. Rago, and J. E. Ayers, \u201cDynamical x-ray diffraction from inverted metamorphic triple-junction solar cells on GaAs substrates,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[79] T. Kujofsa and J. E. Ayers, \u201cEquilibrium modeling of strain compensation in multilayered and ungraded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) heterostructures,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[78] F. A. Althowibi, P. B. Rago, and J. E. Ayers, \u201cDetermination of dislocation densities in metamorphic multijunction solar cells by high-resolution x-ray diffraction,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[77] J. Raphael and J. E. Ayers, Dislocation dynamics and lattice relaxation in InGaN\/GaN (0001) heterostructures,\u201d Materials Science and Technology Conference, Columbus, OH, Oct. 4-8, 2015.<\/p>\n<p>[76] T. Kujofsa and J. E. Ayers, \u201cDesign of super lattice metamorphic buffer layers for high built-in residual strain,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Bridgeport, CT (April 1, 2015).<\/p>\n<p>[75] T. Kujofsa and J. E. Ayers, \u201cKinetically-limited lattice relaxation in linearly- and no-linearly-compositionally-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) metamorphic heterostructures,\u201d American Vacuum Society 61st International Symposium and Exhibition, Baltimore, MD (Nov. 10-14, 2014).<\/p>\n<p>[74] T. Kujofsa and J. E. Ayers, \u201cEvolution of kinetically-limited lattice relaxation and threading dislocations in temperature-graded ZnSe\/GaAs (001) metamorphic heterostructures,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Baltimore, MD (October 20-23, 2014).<\/p>\n<p>[73] P. Rago and J. E. Ayers, \u201cAnalysis of linearly-graded InGaAs\/GaAs (001) metamorphic buffer layers using various hkl diffraction profiles,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 12-16, 2014).<\/p>\n<p>[72] T. Kujofsa and J. E. Ayers, \u201cEquilibrium lattice relaxation and misfit dislocations in step-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and In<sub>x<\/sub>Al<sub>1-x<\/sub>As\/GaAs (001) metamorphic buffer layers,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 12-16, 2014).<\/p>\n<p>[71] P. Rago amd J. E. Ayers, \u201cMosaic crystal model for x-ray diffraction from step-graded and linearly-graded InGaAs\/GaAs (001),\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 12-16, 2014).<\/p>\n<p>[70] T. Kujofsa and J. E. Ayers, \u201cEvolution of lattice relaxation and threading dislocations in ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 12-16, 2014).<\/p>\n<p>[69] M. O. Jones, J. E. Raphael, and J. E. Ayers, \u201cStrain relaxation and misfit dislocations in In<sub>x<\/sub>Ga<sub>1-x<\/sub>N\/GaN heterostructures with a-type dislocations,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 9, 2014).<\/p>\n<p>[68] P. B. Rago and J. E. Ayers, \u201cMosaic crystal model for dynamical x-ray diffraction from step-graded InGaAs\/GaAs (001) metamorphic buffers,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 9, 2014).<\/p>\n<p>[67] T. Kujofsa and J. E. Ayers, \u201cEquilibrium lattice relaxation and misfit dislocations in continuously- and step-graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and GaAs<sub>1-y<\/sub>P<sub>y<\/sub>\/GaAs (001) Metamorphic Buffer Layers,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 9, 2014).<\/p>\n<p>[66] T. Kujofsa and J. E. Ayers, \u201cResolution of x-ray rocking curve measurements made with finite counting statistics,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, Storrs, CT (April 9, 2014).<\/p>\n<p>[65] S. Xhurxhi, E. N. Suarez, and J. E. Ayers, \u201cHalf-loop model for equilibrium strain relaxation in zinc blende semiconductor heterostructures,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[64] J. E. Raphael, B. Bertoli, and J. E. Ayers, \u201cDislocation geometry and equilibrium strain relaxation in InGaN\/GaN (0001) heterostructures,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[63] T. Kujofsa, E. N. Suarez, B. Bertoli, F. C. Jain, and J. E. Ayers, \u201cDislocation compensation in ungraded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) multilayer heterostructures,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[62] P. B. Rago, J. E. Raphael, and J. E. Ayers, \u201cMosaic crystal model for dynamical x-ray diffraction from InGaAs\/GaAs (001) metamorphic heterostructures,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[61] J. E. Raphael, B. Bertoli, and J. E. Ayers, \u201cEquilibrium strain relaxation and dislocations in nitride device structures on semi-polar substrates,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[60] S. Xhurxhi, E. N. Suarez, A. Antony, and J. E. Ayers, \u201cHalf-loop model for equilibrium strain in tensile and compressive layers on InP (001) substrates,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[59] T. Kujofsa, E. N. Suarez, and J. E. Ayers, \u201cNon-equilibrium relaxation and threading dislocations in InGaAs\/GaAs metamorphic buffer layers for devices,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[58] P. B. Rago, J. E. Raphael, and J. E. Ayers, \u201cMosaic crystal model for dynamical x-ray diffraction from metamorphic device heterostructures,\u201d Materials Science and Technology Conference, Montreal, Quebec (Oct. 27-31, 2013).<\/p>\n<p>[57] T. Kujofsa, P. B. Rago, and J. E. Ayers, \u201cLattice relaxation and misfit dislocations in nonlinearly graded In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/GaAs (001) and GaAs<sub>1-y<\/sub>P<sub>y<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d American Vacuum Society 60th International Symposium and Exhibition, Long Beach, CA (Oct. 27- Nov. 1, 2013).<\/p>\n<p>[56] P. B. Rago and J. E. Ayers, \u201cA comparison of phase invariant and mosaic crystal models for dynamical diffraction from InGaAs\/GaAs (001) heterostructures containing dislocations,\u201d American Vacuum Society 60th International Symposium and Exhibition, Long Beach, CA (Oct. 27- Nov. 1, 2013).<\/p>\n<p>[55] P.-Y. Chan, M. Lingalugari, E. N. Suarez, J. E. Ayers, and F. C. Jain, \u201cIndium-Gallium-Arsenide Quantum-Dot Gate Non-Volatile Memory FET Using II-VI Gate Insulators: Fabrication and Simulation,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Chicago, IL (October 1-3, 2013).<\/p>\n<p>[54] E. N. Suarez, P.-Y. Chan, M. Gogna, J. E. Ayers, and F. C. Jain, \u201cNon-Volatile Memory FETs Using II-VI Tunneling Insulators on SOI Substrates,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Chicago, IL (October 1-3, 2013).<\/p>\n<p>[53] T. Kujofsa and J. E. Ayers, \u201cComparison of continuously- and step-graded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) metamorphic buffer layers,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Chicago, IL (October 1-3, 2013).<\/p>\n<p>[52] E. N. Suarez, P.-Y. Chan, M. Gogna, F. Al-Amoody, S.\u00a0 Karmakar, J. E. Ayers, E. Heller, and F. C. Jain, \u201cZnS\/ZnMgSeTe\/ZnS Lattice-Matched II-VI Energy Barrier for InGaAs substrates,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, New Haven, CT (March 13, 2013).<\/p>\n<p>[51] T. Kujofsa and J. E. Ayers, \u201cThreading dislocations in S-graded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) heterostructures,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, New Haven, CT (March 13, 2013).<\/p>\n<p>[50] J. E. Raphael, B. Bertoli, and J. E. Ayers, \u201cEquilibrium strain and dislocation density in nitride based heterostructures,\u201d Connecticut Symposium on Microelectronics and Optoelectronics, New Haven, CT (March 13, 2013).<\/p>\n<p>[49] E. Suarez, P.-Y. Chan, M. Lingalugari, J. E. Ayers, E. Heller, and F. C. Jain, \u201cQuantum dot gate three-state and nonvolatile memory field-effect transistors using a ZnS\/ZnMgS\/ZnS heteroepitaxial stack as a tunnel insulator on silicon-on-insulator substrates,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Seattle, WA (Nov. 27-29, 2012).<\/p>\n<p>[48] P. Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller, E. K. Heller, J. E. Ayers, and F. C. Jain, \u201cFabrication and Simulation of an indium gallium arsenide quantum-dot-gate field effect transistor (QDC-FET) with ZnMgS as a unnel gate insulator,\u201d U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Seattle, WA (Nov. 27-29, 2012).<\/p>\n<p>[47] P. B. Rago and J. E. Ayers, &#8220;The Effect of Epilayer Tilt on Dynamical X-ray Diffraction from a Uniform Heterostructure with Asymmetric Dislocation Densities,&#8221; U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Seattle, WA (Nov. 27-29, 2012).<\/p>\n<p>[46] T. Kujofsa and J. E. Ayers, &#8220;Design of Dislocation-Compensated ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Heterostructures,&#8221; U.S. Workshop on the Physics and Chemistry of II-VI Compounds, Seattle, WA (Nov. 27-29, 2012).<\/p>\n<p>[45] P. B. Rago and J. E. Ayers, &#8220;Dynamical X-ray Diffraction from Semiconductor Heterostructures with Asymmetric Dislocation Densities,&#8221; American Vacuum Society 59th International Symposium and Exhibition, Tampa, FL (Oct. 28 &#8211; Nov. 2, 2012).<\/p>\n<p>[44] T. Kujofsa and J. E. Ayers, &#8220;Dislocation Compensation in Ungraded ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Heterostructures,&#8221; American Vacuum Society 59th International Symposium and Exhibition, Tampa, FL (Oct. 28 &#8211; Nov. 2, 2012).<\/p>\n<p>[43] S. Xhurxhi, A. Antony, F. Obst, D. Sidoti, B. Bertoli, T. Kujofsa, S. Cheruku, J. P. Correa, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, \u201cDesign of S-Graded Strain Accommodation Layers for Lattice-Mismatched Semiconductor Devices,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 7-11, 2012).<\/p>\n<p>[42] J. Raphael, B. Bertoli, and J. E. Ayers, \u201cEquilibrium Strain and Dislocation Density in a Nitride Based Heterostructure,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 7-11, 2012).<\/p>\n<p>[41] T. Kujofsa and J. E. Ayers, \u201cTheoretical Study of Dislocation Compensation in ZnS<sub>y<\/sub>Se<sub>1-y<\/sub>\/GaAs (001) Heterostructures,\u201d Materials Science and Technology Conference, Pittsburgh, PA (Oct. 7-11, 2012).<\/p>\n<p>[40] S. Xhurxhi, K. Koptchaliyiski, F. Obst, D. Sidoti, B. Bertoli, T. Kujofsa, S. Cheruku, J. P. Correa, P. B. Rago, E. N. Suarez, F. C. Jain, \u00a0and J. E. Ayers,&#8221; S-Graded Buffer Layers for Semiconductor Devices,&#8221; Materials Science and Technology Conference, Columbus, OH (Oct. 16-20, 2011).<\/p>\n<p>[39] P. B. Rago and J. E. Ayers,&#8221;Dynamical X-Ray Diffraction from Semiconductor Heterostructures with Dislocations,&#8221; Materials Science and Technology Conference, Columbus, OH (Oct. 16-20, 2011).<\/p>\n<p>[38] T. Kufofsa, S. Cheruku, B. Outlaw, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Plastic Flow and Threading Dislocations in Semiconductor Heterostructures,&#8221; Materials Science and Technology Conference, Columbus, OH (Oct. 16-20,\u00a02011).<\/p>\n<p>[37] P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Dynamical X-Ray Diffraction from ZnSySe1-y Multilayers\u00a0and Superlattices on GaAs\u00a0(001) Substrates,&#8221; \u00a0U.S. Workshop on the Physics and Chemistry of II-VI Materials, Chicago, IL (Oct. 4-6, 2011).<\/p>\n<p>[36] S. Cheruku, T. Kujofsa, W. Yu, B. Outlaw, S. Xhurxhi, D. Sidoti, F. Obst, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Critical Layer Thickness in II-VI\/GaAs Heterostructures and the Role of Finite Experimental Resolution,&#8221; U.S. Workshop on the Physics and Chemistry of II-VI Materials, Chicago, IL (Oct. 4-6, 2011).<\/p>\n<p>[35] T. Kufofsa, S. Cheruku, W. Yu, B. Outlaw, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Relaxation Dynamics and Threading Dislocations in ZnSySe1-y\/GaAs (001) Heterostructures,&#8221; U.S. Workshop on the Physics and Chemistry of II-VI Materials, Chicago, IL (Oct. 4-6, 2011).<\/p>\n<p>[34] S. Xhurxhi, F. Obst,\u00a0D. Sidoti, B. Bertoli, T.\u00a0Kujofsa, S. Cheruku, J.\u00a0P. Correa, P. B. Rago, E.\u00a0N. Suarez, F. C. Jain, and J. E. Ayers, \u00a0&#8220;S-Graded Buffer Layers for Semiconductor Devices,&#8221; Connecticut Microelectronics and Optoelectronics Symposium, New Haven, CT (March 16, 2011).<\/p>\n<p>[33] T. Kujofsa, S. Cheruku, D. Sidoti, S. Xhurxhi, F. Obst, J. P. Correa, B. Bertoli, P. B. Rago, E. N. Suarez, X. Zhang, P. Li, F. C. Jain, and J. E. Ayers, &#8220;Lattice Relaxation by Plastic Flow in ZnSe\/GaAs (001),&#8221; Connecticut Microelectronics and Optoelectronics Symposium, New Haven, CT (March 16, 2011).<\/p>\n<p>[32] P.-Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller, J. E. Ayers, and F. C. Jain, &#8220;Indium gallium arsenide based non-volatile memory devices with site-specific self-assembled germanium quantum dot gate,&#8221; Mat. Res. Soc. Symp. Proc., 1250, 35, Boston, MA (November 2010).<\/p>\n<p>[31] F. Al-Amoody, E. Suarez, A. Rodriguez, W. Huang, J. E. Ayers, and F. Jain, &#8220;Embedded ZnCdSe Cladded Quantum Dots Device with Electroluminescent Electrical Characteristics,&#8221; U.S. Workshop on the Physics and\u00a0Chemistry of II-VI Compounds, New Orleans, LA (October 26-28, 2010).<\/p>\n<p>[30] E. Suarez, M. Gogna, F. Al-Amoody, S. Karmakar, J. E. Ayers, E. Heller, and F. Jain, &#8220;Radiation Hardened Quantum Dot Nonvolatile memory using ZnS\/ZnMgS\/ZnS Tunneling Gate Insulator,&#8221; U.S. Workshop on the Physics and\u00a0Chemistry of II-VI Compunds, New Orleans, LA (October 26-28, 2010).<\/p>\n<p>[29] E. Suarez, M. Gogna, F. Al-Amoody, S. Karmakar, J. E. Ayers, E. Heller, and F. C. Jain, &#8220;Quantum Dot (QD) Floating Gate Nonvolatile Memories using Lattice-Matched ZnS\/ZnMgS\/ZnS Gate Insulators,&#8221; Connecticut Microlectronics and Optoelectronics Symposium, Storrs, CT (April 7, 2010).<\/p>\n<p>[28] P.-Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller, J. E. Ayers, and F. C. Jain, &#8220;Site-Specific Self-Assembled Germanium Quantum Dot Gate Indium Gallium Arsneide Based Non-Volatile Memory Devices,&#8221; Connecticut Microlectronics and Optoelectronics Symposium, Storrs, CT (April 7, 2010).<\/p>\n<p>[27] S. Cheruku, T. Kujofsa, S. Xhurxhi, D. Sidoti, J. P. Correa, B. Bertoli, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Plastic Flow in Semiconductor Heterostructures,&#8221; Connecticut Microlectronics and Optoelectronics Symposium, Storrs, CT (April 7, 2010).<\/p>\n<p>[26] B. Bertoli, S. Xhurxhi, D. Sidoti, S. Cheruku, T. Kujofsa, J. P. Correa, E. N. Suarez, F. C. Jain, and J. E. Ayers, &#8220;Critical Layer Thickness and Strain Relaxation in Exponentially-Graded Semiconductor Heterostructures,&#8221; Connecticut Microlectronics and Optoelectronics Symposium, Storrs, CT (April 7, 2010).<\/p>\n<p>[25] E. Suarez, M. Gogna, F. Alamoody, S. Karmakar, P-Y. Chan, B. Miller, J. Chandy, L. Wang, E. Heller, J. E. Ayers and F. C. Jain, \u201cII-VI Gate Insulators for High Performance Quantum Dot Gate FETs and Nonvolatile Memories,\u201d Connecticut Microelectronics and Optoelectronics Symposium, New Haven, CT (March 11, 2009).<\/p>\n<p>[24] B. Bertoli, E. Suarez, F. C. Jain, and J. E. Ayers, \u201cStrain and dislocation density in a heterostructure with arbitrary compositional grading,\u201d Connecticut Microelectronics and Optoelectronics Symposium, New Haven, CT (March 11, 2009).<\/p>\n<p>[23] J. F. Ocampo, E. Suarez, D. Shah, P. B. Rago, F. C. Jain, and J. E. Ayers, \u201cAsymmetric dislocation densities in graded semiconductor structures,\u201d Connecticut Microelectronics and Optoelectronics Symposium, New Haven, CT (March 11, 2009).<\/p>\n<p>[22] (Invited) J. F. Ocampo, E. Suarez, D. Shah, P. B. Rago, F. C. Jain, and J. E. Ayers, \u201cOvershoot graded layers for defect engineering in heteroepitaxial semiconductor structures,\u201d Materials Science &amp; Technology 2008 Conference, Pittsburgh, PA (October 5-9, 2008).<\/p>\n<p>[21] J. F. Ocampo, E. Suarez, D. Shah, P. B. Rago, F. C. Jain, and J. E. Ayers, \u201cOvershoot graded layers for defect engineering in heteroepitaxial semiconductor structures,\u201d Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (April 9, 2008).<\/p>\n<p>[20] A. Rodriguez, P. Li, B. Yarlagadda, F. Papadimitrakopoulos, W. Huang, J. Ayers, and F.\u00a0 Jain, \u201cZnCdSe-ZnSe cladded quantum dots using Photoassisted Microwave Plasma (PMP) enhanced metalorganic chemical vapor deposition for lasers and electroluminescent phosphors,\u201d <em>2006 NSTI Nanotechnology Conference and Trade Show &#8211; NSTI Nanotech 2006 Technical Proceedings<\/em>, Vol. 3, pp. 137-140 (2006).<\/p>\n<p>[19] B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, and J. E. Ayers, \u201cElastic Strains in Heteroepitaxial ZnSe<sub>1-x<\/sub>Te<sub>x<\/sub> on InGaAs\/InP (001),\u201d 2005 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Cambridge, MA (2005).<\/p>\n<p>[18] P. Li, A. Rodriguez, B. Prakash, R. Shankar, J. E. Ayers, F. C. Jain \u201cImproved interface properties of polyoxide on n-type 4H \u2013SiC by wet oxidation and Ar annealing,\u201d Materials Research Society Fall meeting, Boston, MA (2005).<\/p>\n<p>[17] B. Yarlagadda, A. Rodriguez, P. Li, J. E. Ayers, and F. Jain, \u201cScan of Azimuthal Mosaic Spread (SAMS): A new method for the characterization of heteroepitaxial layers,\u201d Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (March 17, 2005).<\/p>\n<p>[16] B. Yarlagadda, A. Rodriguez, P. Li, J. E. Ayers, and F. C. Jain, \u201cCompositional control and structural properties of ZnSe<sub>1-x<\/sub>Te<sub>x<\/sub> epitaxial films on lattice-matched InGaAs\/InP (001) by Photoassisted metal Organic Vapor Phase Epitaxy,\u201d Materials Research Society Spring Meeting, San Francisco, CA (2004).<\/p>\n<p>[15] Rodriguez, J. Shattuck, X. Zhang, P. Li, F. C. Jain, J. E. Ayers, and D. W. Parent, &#8220;Photo-assisted MOVPE growth of ZnMgS on (100) Si,&#8221; Materials Research Society Fall Meeting, Boston, MA (2001).<\/p>\n<p>[14] X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, \u201cComplete removal of threading dislocations from ZnSe on GaAs (001) by patterned heteroepitaxial processing,\u201d Connecticut Microelectronics and Optoelectronics Symposium, Storrs, CT (April 3, 2001).<\/p>\n<p>[13] X. G. Zhang, A. Rodriguez, X. Wang, P. Li, F. C. Jain, and J. E. Ayers, \u201cA Novel Approach for the Complete Removal of Threading Dislocations from ZnSe on GaAs (001),\u201d 2000 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Albuquerque, NM, USA (2000).<\/p>\n<p>[12] X. G. Zhang, A. Rodriguez, P. Li, F. C. Jain, and J. E. Ayers, &#8220;A Novel Approach for the Complete Removal of Threading Dislocations from Mismatched Heteroepitaxial Layers,&#8221; Materials Research Society Fall Meeting, Boston, MA (2000).<\/p>\n<p>[11] D. W. Parent, A. Rodriguez, P. Li, X. G. Zhang, G. Zhao, J. E. Ayers, and F. C. Jain, &#8220;The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan,&#8221; 1999 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1999).<\/p>\n<p>[10] K. Bao, J. E. Ayers, R. Mo, S. Kalisetty, M. Gokhale, J. Robinson, and F. C. Jain, \u201cCompositional control of CdZnSe grown by photoassisted organometallic vapor phase epitaxy,\u201d 8<sup>th<\/sup> International Conference on Metal Organic Vapor Phase Epitaxy, Cardiff, Wales, UK (1996).<\/p>\n<p>[9] S. Kalisetty, J. Robinson, X. G. Zhang, J. E. Ayers, and F. C. Jain, \u201cGrowth of ZnSSe by photoassisted OMVPE,\u201d 9<sup>th<\/sup> International Conference on Vapor Growth and Epitaxy, Vail, CO, USA (1996).<\/p>\n<p>[8] X. G. Zhang, S. Kalisetty, J. Robinson, J. E. Ayers, and F. C. Jain, \u201cStructural Properties of ZnSSe\/ZnSe\/GaAs (001) heterostructures grown by photoassisted organometallic vapor phase epitaxy,\u201d 1996 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1996).<\/p>\n<p>[7] D. W.\u00a0 Parent, X. G. Zhang, S. Kalisetty, W. Zappone, J. Robinson, G. Zhao, J. E. Ayers, and F. C. Jain, \u201cA comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted organometallic vapor phase epitaxy,\u201d 1996 U. S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA (1996).<\/p>\n<p>[6] M. R. Gokhale, K. X. Bao, P. D.\u00a0 Healey, J. E. Ayers, and F. C. Jain, \u201cRole of cadmium in enhancing optical properties and chlorine doping of photoassisted OMVPE-grown ZnSe,\u201d 37<sup>th<\/sup> Electronic Materials Conference, Charlottesville, VA, USA (1995).<\/p>\n<p>[5] J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, \u201cThreading Dislocation Densities in Mismatched Heteroepitaxial Layers,\u201d Materials Research Society Fall 1990 Meeting, Boston, MA, USA (1990).<\/p>\n<p>[4] L. J. Schowalter, J. E. Ayers, S. K. Ghandhi, S. Hashimoto, W. M. Gibson, F. K. LeGoues, and P. A. Claxton, \u201cStrain in epitaxial GaAs on CaF<sub>2<\/sub>\/Si (111),\u201d Materials Research Society Fall 1989 Meeting, Boston, MA, USA (1989).<\/p>\n<p>[3] Joshua Ladell, John Ayers and John Zola, \u201cTheory and Applications of the Skewed Two-Crystal Monochrocollimator,\u201d American Crystallographic Association Meeting, Philadelphia, PA, USA (1988).<\/p>\n<p>[2] I. B. Bhat, N. R. Taskar, J. Ayers, K. Patel, and S. K. Ghandhi, \u201cCdTe films grown on InSb substrates by organometallic epitaxy,\u201d <em>Materials Research Society Symposia Proceedings<\/em>, Vol. 90, pp. 471-477 (1987).<\/p>\n<p>[1] I. B. Bhat, N. R. Taskar, K. Patel, J. E. Ayers, S. K. Ghandhi, J. Petruzello, and D. Olego, \u201cCharacteristics of OMVPE-grown CdTe and HgCdTe on GaAs,\u201d SPIE, <u>796<\/u>, 194 (1987).<\/p>\n<p>&nbsp;<\/p>\n<p style=\"text-align: justify;\"><strong>Theses and Dissertations:<\/strong><\/p>\n<ul>\n<li>J. E. Ayers, &#8220;Heteroepitaxy in the Ge-GaAs system,&#8221; M. S. Thesis, Rensselaer Polytechnic Institute, Troy, NY, USA (May 1987).<\/li>\n<li>J. E. Ayers, &#8220;Heteroepitaxy of Mismatched Semiconductors,&#8221; Ph. D. Thesis, Rensselaer Polytechnic Institute, Troy, NY, USA (August 1990).<\/li>\n<\/ul>\n<p style=\"text-align: justify;\"><strong>Invention Disclosures:<\/strong><\/p>\n<ul>\n<li>J. E. Ayers, &#8220;A new process for the growth of highly-mismatched heteroepitaxial semiconductors, free from threading dislocations,&#8221; University of Connecticut Invention Disclosure, April 4, 1997.<\/li>\n<\/ul>\n<p><strong>Sponsored Research:<\/strong><\/p>\n<p><em>[26] \u201cGeneralized Kinetic Monte Carlo Model for Si Epitaxy on Surfaces of Arbitrary Orientation,\u201d (PI: John Ayers) Applied Materials, Inc., Feb. 1, 2019 \u2013 present, $8,750.<\/em><\/p>\n<p><em>\u00a0[25] \u201cDetailed Monte Carlo Model of Silane Epitaxy on (100) Si Surfaces,\u201d (PI: John Ayers) Applied Materials, Inc., Feb. 1, 2018 \u2013 Jan. 31, 2019, $8,750.<\/em><\/p>\n<p><em>[24] \u201cAtomistic Modeling of Si Epitaxy on (100) Si Surfaces,\u201d (PI: John Ayers) Applied Materials, Inc., Sept. 23, 2017 \u2013 Jan. 31, 2018, $8,750.<\/em><\/p>\n<p><em>[23] \u201cDoping and Orientation Effects in SiGe Strain-Relaxed Buffers for Advanced Integrated Circuit Applications,\u201d (PI: John Ayers) Applied Materials, Inc., Jan. 5, 2017 \u2013 Sept. 22, 2017, $8,750.<\/em><\/p>\n<p><em>[22] \u201cProcess Considerations for Reduced Threading Dislocations in Strain-Relaxed SiGe Buffers On Si Substrates for Advanced Integrated Circuit Applications,\u201d (PI: John Ayers) Applied Materials, Inc., Dec. 22, 2016 \u2013 Jan. 5, 2017, $8,750.<\/em><\/p>\n<p><em>[21] \u201cModeling of Strain Relaxation and Dislocations in SiGe and Ge Buffers for Advanced Transistors,\u201d (PI: John Ayers) Applied Materials, Inc., June 1, 2016 \u2013 Dec. 22, 2016, $8,750.<\/em><\/p>\n<p><em>[20] \u201cModeling of Strain Relaxed SiGe Buffers for Advanced Transistors,\u201d (PI: John Ayers) Applied Materials, Inc., Nov. 24, 2015 \u2013 May 31, 2016, $8,750.<\/em><\/p>\n<p><em>[19] \u201cStrain Relaxed SiGe Buffers for Advanced Transistors,\u201d (PI: John Ayers) Applied Materials, Inc., Sept. 3 \u2013 Nov. 23, 2015, $8,750.<\/em><\/p>\n<p><em>[18] \u201cAdvanced Processing for CMOS Transistors,\u201d (PI: John Ayers) Applied Materials, Inc., May 1 \u2013 Sept. 2, 2015, $8,750.<\/em><\/p>\n<p><em>[17] \u201cBistability in 500+ GHz Sub-22 nm Quantum Dot Gate InGaAs-InP FETs for Next Generation Analog and Digital Circuits for Advanced Radars and Communication Systems,\u201d (PI: F.C. Jain; Co-PIs:\u00a0 J. E. Ayers, R. Bansal, J. Chandy, and F. Papadimitrakopoulos), Office of Naval Research, October 1, 2005-September 30, 2008, $420,087, FRS # 524069<\/em><\/p>\n<p><em>[16] \u201cNanotechnology Undergraduate Education: Development of Introductory and Advanced Theory and Laboratory Courses in Nanoelectronics and Optoelectronics,\u201d (PI: F.C. Jain; Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, R. Magnusson, R. Bansal,\u00a0 G. Sotzing,\u00a0 B. Sinkovic,\u00a0 and Q. Kessel),\u00a0 National Science Foundation, July 1, 2004-June 30, 2008, $100,000, FRS # 523636<\/em><\/p>\n<p><em>[15] &#8220;Reconfigurable Interconnects, 200-500 GHz SiGe and InGaAs-InP Nanochannel FETs, and 1.55 um Quantum Well Laser Modulators on Silicon for Advanced Systems,&#8221; (PI:\u00a0 F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, and R. Bansal), Office of Naval Research N000140210883, September 1, 2002-September 30, 2005, $247,000., FRS # 523077.<\/em><\/p>\n<p><em>[14] &#8220;Nanochannel FETs and Quantum Dot Based Nonvolatile Memory Cells Using Site-specific and Layer-by-layer Self-Assembly Techniques,&#8221; (PI: F. C. Jain, Co-PIs: J. E. Ayers, F. Papadimitrakopoulos, and M. Aindow), National Science Foundation (Nanotechnology Exploratory Research, NER, Initiative), July 1, 2002-June 30, 2005, $93,609, FRS # 523075.<\/em><\/p>\n<p><em>[13] &#8220;Advanced SiGe Field-Effect Transistor Design and Processing Technology to Fabricate 10 Gb\/s+ Line Interface Circuits for Fiber Optic Communication,&#8221; (PI:\u00a0 F. C. Jain; Co-PIs:\u00a0 J. E. Ayers, R. Bansal, and F. Papadimitrakopoulos), Connecticut Innovations, Inc., July 1, 2000-June 30, 2004, $290,750., FRS# 630486.\u00a0 <\/em><\/p>\n<p><em>[12] &#8220;Advanced SiGe Field-Effect Transistor Design and Processing Technology to Fabricate 10 Gb\/s+ Line Interface Circuits for Fiber Optic Communication,&#8221; (PI:\u00a0 F. C. Jain, Co-PIs:\u00a0 J. E. Ayers, R. Bansal and F. Papadimitrakopoulos), TranSwitch, July 1,2000-June 30, 2004, $100,000, FRS # 630515. <\/em><\/p>\n<p><em>[11] NER: Nano channel FETs and Quantum dot Based Memory Cells Using Site Specific and Layer-by-Layer Self-Assembly; (PI: F. Jain; Co-PI: J. E. Ayers); NSF; June 1, 2002 \u2013 June 30, 2003; $99,999.<\/em><\/p>\n<p><em>[10] Novel site-specific processing of nanopatterns (10-30nm) to fabricate ultrahigh performance SiGe quantum well\/wire\/dot devices, June 1, 2000- May 31, 2001 (PI: F. Jain, Co-PIs:\u00a0 J. Ayers and F. Papadimitrakopoulos), UCRF, $18,609.<\/em><\/p>\n<p><em>[9] \u201cPatterned Heteroepitaxial Processing: A New Approach to Mismatched Heteroepitaxy for the Fabrication of High Performance Semiconductor Devices,\u201d (PI: J. E. Ayers, Co-PI: F. C. Jain), NSF, July 1, 1999 \u2013 Dec. 31, 2000, $35,312, FRS #521032.<\/em><\/p>\n<p><em>[8] \u201cReliability Study of Oxidized Deposited Polysilicon (ODP) Gate Oxide for SiC Power MOSFETs,\u201d (PI: J. E. Ayers, Co-PIs: A. F. M. Anwar and F. C. Jain), NSF, July 1, 1999 \u2013 May 31, 2001, $38,898, FRS # 521036.<\/em><\/p>\n<p><em>[7] \u201cDevelopment of High Brightness Quantum Dot Based Nanophosphors for Electroluminescent Flat Panel Displays and Illuminators\u201d, Ballistic Missile Defense Organization (Contract N00178-98-C-3035) \/E-Lite Technologies Inc., Phase I, $22,000. May 15-November 14, 1998; Fast Track, $11,500. November 14-February 14, 1999; Phase II, April 15-June 30, 2001 (PI: F. C. Jain, Co-PIs: J. E. Ayers and F.\u00a0 Papadimitrakopoulos), $560,000, FRS # 522418.<\/em><\/p>\n<p><em>[6] \u201cDevelopment of Low Voltage, High Brightness Flexible Electroluminescent Lamps for Display Applications\u201d, CII\/Yankee Ingenuity Grant 97G025, $ 200,000, August 12, 1998-August 11, 2000 (PI: F. Jain; Co-PIs: J. E. Ayers and F. Papadimitrakopoulos) $100,000., FRS # 633377.<\/em><\/p>\n<p><em>[5] \u201cMOCVD Reactor for Nanocrystal Growth,\u201d January, 1998-December, (PI: F. C. Jain, Co-PIs: J. E. Ayers and F. Papadimitrakopoulos) UCRF, $14,500. FRS # 440104.<\/em><\/p>\n<p><em>[4] \u201cElectroluminescent flat panel displays using MOCVD grown ZnS and ternary compounds for enhanced blue emission,\u201d (PI: F. C. Jain, Co-PI: J. E. Ayers), UCRF, Jan. 1, 1998 &#8211; Dec. 31, 1998, $14,711., FRS # 440922. <\/em><\/p>\n<p><em>[3] \u201cMismatched heteroepitaxy for the fabrication of high-performance semiconductor devices,\u201d (PI: J. E. Ayers, Co-PI\u2019s: F. C. Jain, A. F. M. Anwar), UCRF, June 1, 1997 &#8211; May 31, 1998, $9,407., FRS # 441517. <\/em><\/p>\n<p><em>[2] \u201cStudy of Dark-Line Defects in II-VI Heterostructures,\u201d (PI: J. E. Ayers) UCRF, Sept. 1995 &#8211; Jan. 1997, $4,480., FRS # 441517.<\/em><\/p>\n<p><em>[1] \u201cNew Approaches to the Fabrication of Blue Semiconductor Laser Diodes by Vapor Phase Epitaxy,\u201d (PI: J. E. Ayers) NSF, July 1993 &#8211; Jan. 1997, $89,992 ($10,000 matching), FRS # 521714.<\/em><\/p>\n<p>&nbsp;<\/p>\n<p><strong>Current Research Team<\/strong><\/p>\n<p>Tedi Kujofsa (post-doctoral researcher), Md T. Islam, Kevin Lindstrom, Johanna Raphael, James Wales<\/p>\n<p>&nbsp;<\/p>\n<p><strong>Former Research Students<\/strong><\/p>\n<p>Fahad Althowibi, Ansin Antony, Xunde Bao, Brandon Bertoli, Minglei Cai, Andrew Chemistruck, Xinkang Chen, Sushma Cheruku, Juan Pablo Correa, Brandon D\u2019Agostino, Milind Gokhale, Paul Healey, Sarada Kalisetty, Kristian Koptchaliyski, Peng Li, Calvin Lopez, Rihong Mo, Francis Obst, Juan Felipe Ocampo, Brian Outlaw, Paul Rago, Jonathan Reed, \u00a0Alvin Sanabria, David Sidoti, Digish Shah, Yifei Song, James Trapp, Christian Wilkie, Sirjan Xhurxhi, Bhanu Yarlagadda, Wei Yu, Xiaoguang Zhang, Guoxing Zhao<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>\u00a0 \u00a0 John E. Ayers Associate Professor Office: ITE 461 Phone: (860) 486-2207 Email:\u00a0jayers@engr.uconn.edu Personal Page:\u00a0http:\/\/www.engr.uconn.edu\/~jayers Semiconductor Materials Research Group\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 Education: Ph.D., Rensselaer Polytechnic Institute, 1990. M.S., Rensselaer Polytechnic Institute, 1987. B.S.,\u00a0University of Maine, 1984. Experience: 2015 &#8211; present: Chief Scientist, Epitax Engineering 1996-present: Associate Professor, University of Connecticut 1999-2006: \u00a0Associate Department Head,\u00a0ECE, \u00a0University of [&hellip;]<\/p>\n","protected":false},"author":59,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-4","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/pages\/4","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/users\/59"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/comments?post=4"}],"version-history":[{"count":6,"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/pages\/4\/revisions"}],"predecessor-version":[{"id":19,"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/pages\/4\/revisions\/19"}],"wp:attachment":[{"href":"https:\/\/www.ee.uconn.edu\/john-e-ayers\/wp-json\/wp\/v2\/media?parent=4"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}