Research Topics
- Memristor
- ZnO
- THz
- Quantum Cascade Laser
- High Electron Mobility Transistors (HEMTs)
- Heterojunction Bipolar Transistors (HBTs)
- Resonant Tunneling Devices
- Transport in Semiconductors
- Noise in Semiconductor Devices
- THz Assisted Counterfeit Detection
- Engineered Nanostructures for Authentication
- Solar Blind Detector
- Photonics
- Si & Related Devices
- Fundamental Physics
Fundamental Physics
Publications:
- Localization and shot noise in nanostructures, AFM Anwar, Nanosensing: Materials and Devices 5593, 408-416
- Broadening in the absorption line through a redistribution of the density of states, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices VI 3283, 952-960
- On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's, AFM Anwar, RT Webster, IEEE Transactions on Electron Devices 45 (6), 1170-1175
- Electron escape via polar optical-phonon interaction and tunneling from biased quantum wells, AFM Anwar, KR Lefebvre, Physical Review B 57 (8), 4584
- Redistribution of the quantum well density of states under the influence of an electric field, KR Lefebvre, AFM Anwar, Semiconductor science and technology 12 (10), 1226
- Electron escape dynamics from a biased quantum well, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices V 2994, 442-452
- Electron escape time from single quantum wells, KR Lefebvre, AFM Anwar, IEEE journal of quantum electronics 33 (2), 187-191
- New method of computing band offsets and its application to AlGaN/GaN heterostructures, RT Webster, AFM Anwar, MRS Online Proceedings Library Archive 482
- Electron and hole escape times in single quantum wells, KR Lefebvre, AFM Anwar, Journal of applied physics 80 (6), 3595-3597
- Density of states for double-barrier quantum-well structures under the influence of external fields and phase-breaking scattering, AFM Anwar, MM Jahan, Physical Review B 50 (15), 10864
- Self-consistent calculation of traversal time in a double-barrier resonant-tunneling structure in the presence of a transverse magnetic field, AFM Anwar, MM Jahan, Physical Review B 49 (24), 17440
- Self‐consistent calculation of shot noise in a double‐barrier resonant tunneling structure in the presence of magnetic field, MM Jahan, AFM Anwar, AIP Conference Proceedings 285 (1), 521-524
- Self-consistent study of the effect of a transverse magnetic field on the performance of the double barrier resonant tunneling structure, MM Jahan, University of Connecticut
- Study of localization using quantum-mechanical tunneling time and modeling of shot noise, AFM Anwar, KW Liu, MM Jahan, Quantum Well and Superlattice Physics IV 1675, 376-388
- Tunneling time through resonant tunneling devices and quantum-mechanical bistability, M Cahay, KT Dalton, GS Fisher, AFM Anwar, Superlattices and microstructures 11 (1), 113-117
- Influence of impurity scattering on the traversal time and current-voltage characteristics of resonant tunneling structures, AFM Anwar, RB LaComb, M Cahay, Superlattices and microstructures 11 (1), 131-135
- Tailoring the two dimensional electron gas distribution by selective doping of the quantum well, AFM Anwar, RD Carrol, The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 Issue: 4, pp.269-275
- Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept, AN Khondker, MR Khan, AFM Anwar, Journal of applied physics 63 (10), 5191-5193