Heterojunction Bipolar Transistors (HBTs)

Publications:

  • Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., Brisbane, Qld., 2004, pp. 129-132
  • Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683
  • A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors, AFM Anwar, MM Jahan, IEEE Transactions on Electron Devices 50 (2), 272-277
  • Base transit time in abrupt GaN/InGaN/GaN HBT's, SY Chiu, AFM Anwar, S Wu, IEEE Transactions on Electron Devices 47 (4), 662-666
  • High-frequency microwave characteristics of HBTs, SY Chiu, AFM Anwar, SPIE proceedings series, 546-549
  • Effect of surface recombination on the Early voltage in HBTs, SY Chiu, AFM Anwar, Semiconductor science and technology 14 (9), 840
  • Nonlinearity Analysis of HBTs, SY Chiu, AFM Anwar, Proceedings, 97
  • Base transit time in abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs, SY Chiu, AFM Anwar, S Wu, Materials Research Society Internet Journal of Nitride Semiconductor Res. 4S1, G6.7 (1999)
  • Effect of Surface Recombination on HBT Performance, SY Chhi, AFM Anwar, Proceedings: 1997 International Semiconductor Device Research Symposium, December 10-13, 1997, Omni Charlottesville Hotel
  • An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors, MM Jahan, AFM Anwar, Solid-State Electronics 39 (6), 941-948
  • An analytical expression for base transit time in an exponentially doped base bipolar transistor, MM Jahan, AFM Anwar, Solid-State Electronics 39 (1), 133-136
  • Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Electron Device Letters 16 (12), 551-553
  • Early voltage in double heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Transactions on Electron Devices 42 (11), 2028-2029
  • Noise resistance of heterojunction bipolar transistors, AFM Anwar, MK Jahan, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1995, pp. 296-302