Quantum Cascade Laser

ZnO/ZnMgO is investigated as a possible material platform for room temperature QCL operating at THz frequencies. Theoretical calculations suggest better performance as compared to comparable III-Nitride material system. Higher calculated optical output powers [PZnMgO = 2.89 mW (nonpolar) at 5.27 THz and 2.75 mW (polar) at 4.93 THz] are obtained with the ZnO/Zn0.95Mg0.05O structure as compared with GaN/Al0.05Ga0.95N QCLs [PAlGaN = 2.37 mW (nonpolar) at 4.67 THz and 2.29 mW (polar) at 4.52 THz]. A higher wall-plug efficiency (WPE) is obtained for ZnO/ZnMgO QCLs [24.61% (nonpolar) and 23.12% (polar)] when compared with GaN/AlGaN structures [14.11% (nonpolar) and 13.87% (polar)].

Publications

• Room-Temperature Quantum Cascade Laser: ZnO/Zn1− xMgxO Versus GaN/AlxGa1− xN
  HC Chou, A Mazady, J Zeller, T Manzur, M Anwar
  Journal of electronic materials 42 (5), 882-888
• ZnO/Zn_1−xMg_xO QCL: A high power room temperature THz source
  HC Chou, J Zeller, T Manzur, M Anwar
  Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4
• Nitride THz GaN quantum cascade lasers
  HC Chou, M Anwar, T Manzur, J Zeller, AK Sood
  Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2
• STRAIN INDUCED ACTIVE LAYER DESIGN OF GaN-THz QUANTUM CASCADE LASERS
  T MANZUR, M ANWAR
  International Journal of High Speed Electronics and Systems 20 (03), 621-627
• Active layer design of THz GaN quantum cascade lasers
  HC Chou, T Manzur, M Anwar
  Terahertz Physics, Devices, and Systems V: Advance Applications in Industry …
• GaN-based THz advanced quantum cascade lasers for manned and unmanned systems
  AFM Anwar, T Manzur, KR Lefebvre, EM Carapezza
  Unmanned/Unattended Sensors and Sensor Networks VI 7480, 748012