Research Topics
- Memristor
- ZnO
- THz
- Quantum Cascade Laser
- High Electron Mobility Transistors (HEMTs)
- Heterojunction Bipolar Transistors (HBTs)
- Resonant Tunneling Devices
- Transport in Semiconductors
- Noise in Semiconductor Devices
- THz Assisted Counterfeit Detection
- Engineered Nanostructures for Authentication
- Solar Blind Detector
- Photonics
- Si & Related Devices
- Fundamental Physics
Resonant Tunneling Devices
A novel concept, the quantum mechanical wave impedance (QMWI) that is related to the logarithmic derivative of the particle wave function is introduced as a method to solve time-independent Schroedinger equation. Use of QMWI does not require the incorporation of fictitious boundary conditions at infinity for wave function normalization. QMWI being a complex number eases computation and does not result in round-off errors. Moreover, the method lends towards easy incorporation of both elastic and inelastic scatterings and self-consistent solution.
Publications:
- Localization and shot noise in nanostructures, AFM Anwar, Nanosensing: Materials and Devices 5593, 408-416
- Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETs, SS Islam, MN Rahman, AFM Anwar, Semiconductor Device Research Symposium, 2003 International, 441-442
- Shot noise in double barrier quantum structures, MM Jahan, AFM Anwar, Solid-state electronics 38 (2), 429-432
- Traversal time in an asymmetric double-barrier quantum-well structure, AFM Anwar, MM Jahan, IEEE journal of quantum electronics 31 (1), 3-7
- Density of states for double-barrier quantum-well structures under the influence of external fields and phase-breaking scattering, AFM Anwar, MM Jahan, Physical Review B 50 (15), 10864
- Self-consistent calculation of traversal time in a double-barrier resonant-tunneling structure in the presence of a transverse magnetic field, AFM Anwar, MM Jahan, Physical Review B 49 (24), 17440
- Self‐consistent calculation of shot noise in a double‐barrier resonant tunneling structure in the presence of magnetic field, MM Jahan, AFM Anwar, AIP Conference Proceedings 285 (1), 521-524
- Study of shot noise in a double barrier resonant tunneling structure, MM Jahan, AFM Anwar, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1993, pp. 189-193
- Self-consistent study of the effect of a transverse magnetic field on the performance of the double barrier resonant tunneling structure, MM Jahan, University of Connecticut
- Study of localization using quantum-mechanical tunneling time and modeling of shot noise, AFM Anwar, KW Liu, MM Jahan, Quantum Well and Superlattice Physics IV 1675, 376-388
- Tunneling time through resonant tunneling devices and quantum-mechanical bistability, M Cahay, KT Dalton, GS Fisher, AFM Anwar, Superlattices and microstructures 11 (1), 113-117
- Influence of impurity scattering on the traversal time and current-voltage characteristics of resonant tunneling structures, AFM Anwar, RB LaComb, M Cahay, Superlattices and microstructures 11 (1), 131-135
- Calculation of the traversal time in resonant tunneling devices, AFM Anwar, AN Khondker, MR Khan, Journal of applied physics 65 (7), 2761-2765
- Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept, AN Khondker, MR Khan, AFM Anwar, Journal of applied physics 63 (10), 5191-5193