Si & Related Devices


Publications:

  • An analytical model for the threshold voltage of polysilicon MOSFET, A.F.M. Anwar and A.N. Khondker, Materials Issues in Amorphous-Semiconductor Technology 53, 441, 2011
  • Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, RT Webster, US Patent 7,700,419, 2010
  • Insulated gate silicon nanowire transistor and method of manufacture, AF Anwar, RT Webster, US Patent 7,485,908, 2009
  • BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOS, SS Islam, AFM Anwar, Semiconductor Device Research Symposium, 2003 International, 168-169, 2003
  • Effects of impurity traps on gate current and trapped charge in MOSFETs, SS Islam, MR Khan, AFM Anwar, Solid-State Electronics 47 (2), 333-337, 2003
  • Noise performance of Si/Si/sub 1-x/Ge/sub x/n-channel HEMTs and p-channel FETs, KW Liu, AFM Anwar, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240, 1996
  • Noise performance of Si/Si/sub 1-x/Ge/sub x/FETs, AFM Anwar, KW Liu, VP Kesan, IEEE Transactions on Electron Devices 42 (10), 1841-1846, 1995
  • An analytical model of current-voltage characteristics and dc small-signal parameters for Si/Si1− xGex FETs, KW Liu, AFM Anwar, VP Kesan, Solid-state electronics 37 (8), 1570-1572, 1994
  • DC, small‐signal parameters and noise performance for SiGe/Si FETs, AFM Anwar, KW Liu, MM Jahan, VP Kesan, AIP Conference Proceedings 285 (1), 354-357, 1993
  • An envelope function description of the quantum well formed in strained layer SiGe/Si modulation doped field effect transistors, AFM Anwar, KW Liu, RD Carroll, Journal of applied physics 74 (3), 2064-2066, 1993
  • Noise in Si / Si 1- x Ge x n-channel HEMTs and p-channel FETs, AFM Anwar, KW Liu, MM Jahan, Simulation of Semiconductor Devices and Processes, 273-276, 1993
  • Monte Carlo simulation of SiGe/Si MESFETs, M Gokhale, AFM Anwar, RD Carrol, FC Jain, COMPEL-The international journal for computation and mathematics in …, 1991
  • A model for polysilicon MOSFET's, AFM Anwar, AN Khondker, IEEE Transactions on Electron Devices 34 (6), 1323-1330, 1987
  • An analytical model for the threshold voltage of polysilicon MOSFET's, AFM Anwar, AN Khondker, MRS Online Proceedings Library Archive 53, 1985