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High Electron Mobility Transistors (HEMTs)

High Electron Mobility Transistors (HEMTs)

Modern communications requires the development of advanced electronics with unity gain current cutoff in hundreds of GHz. III-V based low noise amplifiers to III-Nitride based high power electronics serves as the backbone of our communication and defense industries.

     

 

 

 

 

 

 

 

III-V HEMTs

  • Schottky barrier height in GaN/AlGaN heterostructures, AFM Anwar, EW Faraclas, Solid-State Electronics 50 (6), 1041-1045, 2006
  • AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics, EW Faraclas, AFM Anwar, Solid-state electronics 50 (6), 1051-1056, 2006
  • Bias induced strain in heterojunction field effect transistors and its implications, AFM Anwar, RT Webster, KV Smith, Applied physics letters 88 (20), 203510, 2006
  • Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’”[Appl. Phys. Lett. 86, 016101 (2005)], AFM Anwar, SS Islam, RT Webster, Applied Physics Letters 86 (1), 016101, 2005
  • Spice model of AlGaN/GaN hemts and simulation of VCO and power amplifier,  SS Islam, AFM Anwar, High Performance Devices, 229-235, 2005
  • Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation, E Faraclas, RT Webster, G Brandes, AFM Anwar, High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference …2004
  • REPORT DOCUMENTATlON PAGE omé’Wffi’imtaa, SS Islam, AFM Anwar, RTW gATASK NUMBER, IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (6), 2004
  • A physics-based frequency dispersion model of GaN MESFETs, SS Islam, AFM Anwar, RT Webster, IEEE Transactions on electron devices 51 (6), 846-853, 2004
  • Self-heating and trapping effects on the RF performance of GaN MESFETs, SS Islam, AFM Anwar, IEEE transactions on microwave theory and techniques 52 (4), 1229-1236, 2004
  • Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors, AFM Anwar, SS Islam, RT Webster, Applied physics letters 84 (11), 1970-1972, 2004
  • Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETs, SS Islam, MN Rahman, AFM Anwar, Semiconductor Device Research Symposium, 2003 International, 441-442, 2003
  • A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs, SS Islam, AFM Anwar, RT Webster, Device Research Conference, 2003, 69-70, 2003
  • Analysis of RF performances of GaN MESFETs including self-heating and trapping effects, SS Islam, AFM Anwar, Microwave Symposium Digest, 2003 IEEE MTT-S International 1, 459-462, 2003
  • A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs, KW Liu, AFM Anwar, Solid-State Electronics 47 (5), 763-768, 2003
  • Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Solid-State Electronics 47 (2), 339-344, 2003
  • Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects, SS Islam, AFM Anwar, IEEE transactions on microwave theory and techniques 50 (11), 2474-2479, 2002
  • Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis, AFM Anwar, SS Islam, Solid-State Electronics 46 (10), 1507-1511, 2002
  • High frequency GaN/AlGaN HEMT class-E power amplifier, SS Islam, AFM Anwar, Solid-State Electronics 46 (10), 1621-1625, 2002
  • Thermal and trapping effects in GaN-based MESFETs, SS Islam, AFM Anwar, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …, 2002
  • Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …, 2002
  • Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series, SS Islam, AFM Anwar, Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354, 2002
  • Temperature-dependent nonlinearities in GaN/AlGaN HEMTs, SS Islam, AFM Anwar, IEEE Transactions on Electron Devices 49 (5), 710-717, 2002
  • Temperature dependent transport parameters in short GaN structures, AFM Anwar, S Wu, RT Webster, physica status solidi (b) 228 (2), 575-578, 2001
  • A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series, A Ahmed, SS Islam, AFM Anwar, IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524, 2001
  • Temperature dependence of intermodulation and linearity in GaN based devices, A Ahmed, SS Islam, AFM Anwar, Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers …, 2001
  • Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors AFM Anwar, S Wu, RT Webster, IEEE Transactions on Electron devices 48 (3), 567-572, 2001
  • RF performance of GaN/AlGaN HEMT amplifier, AFM Anwar, SS Islam, Semiconductor Device Research Symposium, 2001 International, 209-212, 2001
  • Gain compression in GaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Semiconductor Device Research Symposium, 2001 International, 205-208, 2001
  • An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors, KW Liu, AFM Anwar, Microelectronics journal 32 (1), 85-88, 2001
  • GaN/AlGaN HEMT microwave class-e power amplifier, SS Islam, AFM Anwar, Semiconductor Device Research Symposium, 2001 International, 446-449, 23001, 2001
  • Impact ionization in InAlAs/InGaAs/InAlAs HEMT's, RT Webster, S Wu, AFM Anwar, IEEE Electron Device Letters 21 (5), 193-195, 2000
  • A theoretical determination of impact ionization induced gate current in InP HEMTs, S Wu, AFM Anwar, High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on …, 2000
  • The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors, KW Liu, AFM Anwar, Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1 …, 2000
  • A THEORETICAL DETERIVHNATION OF] 1V [PACT IONIZATION INDUCED GCINIP HEMT, S Wu, AFM Anwar,  Proceedings, 2000 IEEE/Cornell Conference on High Performance Devices …, 2000
  • Physics-based intrinsic model for AlGaN/GaN HEMTs, S Wu, RT Webster, AFM Anwar, Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
  • On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's, AFM Anwar, RT Webster, IEEE Transactions on Electron Devices 45 (6), 1170-1175, 1999
  • Impact Ionization in InP-based HEMTs, RT Webster, AFM Anwar, S Wu, Proceedings, 172, 1997
  • New method of computing band offsets and its application to AlGaN/GaN heterostructures, RT Webster, AFM Anwar, MRS Online Proceedings Library Archive 482, 1997
  • An analytical noise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs, KW Liu, AFM Anwar, CJ Wu, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370, 1996
  • An analytical characterization for IMODFETs, KW Liu, AFM Anwar, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 371-375, 1996
  • A charge control and current-voltage model for inverted MODFET's, AFM Anwar, KW Liu, AN Khondker, IEEE Transactions on Electron Devices 42 (4), 586-590, 1995
  • A noise model for high electron mobility transistors, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 41 (11), 2087-2092, 1994
  • A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs, KW Liu, AFM Anwar, Solid-state electronics 37 (1), 51-54, 1994
  • Noise modeling for W‐band pseudomorphic InGaAs HEMT’s, KW Liu, AFM Anwar, RD Caroll, AIP Conference Proceedings 285 (1), 280-283, 1993
  • Noise properties of AlGaAs/GaAs MODFET's, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 40 (6), 1174-1176, 1993
  • Noise Analysis of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan, ISDRS 1, 199 (1993)
  • Approximate analytic current-voltage calculations for MODFETs, AN Khondker, AFM Anwar, IEEE Transactions on Electron Devices 37 (1), 314-317, 1990
  • On modelling of quantum well devices., AFM Anwar, 1989
  • Envelope function description of double‐heterojunction quantum wells, AFM Anwar, AN Khondker, Journal of applied physics 62 (10), 4200-4203, 1987
  • Analytical models for AlGaAs/GaAs heterojunction quantum wells, AN Khondker, AFM Anwar, Solid-state electronics 30 (8), 847-852, 1987
  • Charge control mechanism in MODFET's: a theoretical analysis, AN Khondker, AFM Anwar, MA Islam, L Limoncelli, D Wilson, IEEE transactions on electron devices 33 (11), 1825-1826, 1986

Metamorphic HEMTs

  • Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs, RT Webster, AFM Anwar, Solid-State Electronics 48 (10-11), 2007-2011, 2004
  • AlGaAsSb/InGaAs/AlGaAsSb metamorphic HEMTs, RT Webster, AFM Anwar, JL Heaton, K Nichols, S Duncan, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …, 2002
  • An envelope function description of the quantum well formed in AlxGa1−xAsySb1−y/InAs/AlxGa1−xAsySb1−y heterostructures, AFM Anwar, RT Webster, Journal of applied physics 80 (12), 6827-6830, 1996

 

III-Nitride HFETs

Noise and Power Performance

  • Spice model of AlGaN/GaN hemts and simulation of VCO and power amplifier,  SS Islam, AFM Anwar, High Performance Devices, 229-235, 2005
  • Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on …, 2004
  • Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs, RT Webster, AFM Anwar, Solid-State Electronics 48 (10-11), 2007-2011, 2004
  • Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683, 2003
  • Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Solid-State Electronics 47 (2), 339-344, 2003
  • Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects, SS Islam, AFM Anwar, IEEE transactions on microwave theory and techniques 50 (11), 2474-2479, 2002
  • Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …, 2002
  • Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series, SS Islam, AFM Anwar, Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE, 351-354, 2002
  • Temperature-dependent nonlinearities in GaN/AlGaN HEMTs, SS Islam, AFM Anwar, IEEE Transactions on Electron Devices 49 (5), 710-717, 2002
  • A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series, A Ahmed, SS Islam, AFM Anwar, IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524, 2001
  • Temperature dependence of intermodulation and linearity in GaN based devices, A Ahmed, SS Islam, AFM Anwar, Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers …, 2001
  • Gain compression in GaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Semiconductor Device Research Symposium, 2001 International, 205-208, 2001
  • GaN/AlGaN HEMT microwave class-e power amplifier, SS Islam, AFM Anwar, Semiconductor Device Research Symposium, 2001 International, 446-449, 23001, 2001
  • The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors, KW Liu, AFM Anwar, Microelectronics, 2000. Proceedings. 2000 22nd International Conference on 1 …, 2000
  • Nonlinearity Analysis of HBTs, SY Chiu, AFM Anwar, Proceedings, 97, 1999
  • An analytical noise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs, KW Liu, AFM Anwar, CJ Wu, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 365-370, 1996
  • Noise modeling for W‐band pseudomorphic InGaAs HEMT’s, KW Liu, AFM Anwar, RD Caroll, AIP Conference Proceedings 285 (1), 280-283, 1993
  • Noise properties of AlGaAs/GaAs MODFET's, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 40 (6), 1174-1176, 1993
  • Noise Analysis of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan, ISDRS 1, 199 (1993)

Circuits

  • Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects, SS Islam, AFM Anwar, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference …, 2002