Memristors

Our team at the University of Connecticut has developed and reported the underlying physics and chemistry of the different processes governing the operation of memristors. This has followed fabrication of individual memristors and cross bar structures using ZnO as the material platform. Recent applications include the demonstration of 1-bit memristors PUF and implication logic.

Theory/Model

• Transient circuit model of memristors
  A Mazady, M Anwar
  International Journal of High Speed Electronics and Systems 24 (03n04), 1520007
• DC Circuit Model of TiO₂-based Memristors
  A Mazady, M Anwar
  International Journal of High Speed Electronics and Systems 24 (03n04), 1550004
• Memristor: Part I—The underlying physics and conduction mechanism
  A Mazady, M Anwar
  IEEE Transactions on Electron Devices 61 (4), 1054-1061
• Memristor: part II–DC, transient, and RF analysis
  A Mazady, M Anwar
  IEEE Transactions on Electron Devices 61 (4), 1062-1070
• Transient analysis of memristors
  A Mazady, M Anwar
  Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4Measurements
• DC circuit model of a memristor
  A Mazady, M Anwar
  Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2

Applications

• Memristor puf—a security primitive: Theory and experiment
  A Mazady, MT Rahman, D Forte, M Anwar
  IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (222 - 229) 2015