Noise in Semiconductor Devices 

High frequency noise is HEMTs and HBTs are formulated. The formulations reflect a unique blend of quantum nature of carriers and stochastic processes.

Publications:

  • Spice model of AlGaN/GaN hemts and simulation of VCO and power amplifier, SS Islam, AFM Anwar, High Performance Devices, 229-235
  • Noise Characterization for Heterojunction Bipolar Transistors (HBTs), KW Liu, AFM Anwar, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., Brisbane, Qld., 2004, pp. 129-132.
  • Bias dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, KW Liu, AFM Anwar, IEEE transactions on microwave theory and techniques 51 (3), 677-683
  • Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers, A Ahmed, SS Islam, AFM Anwar, Solid-State Electronics 47 (2), 339-344
  • Noise performance of Si/Si/sub 1-x/Ge/sub x/n-channel HEMTs and p-channel FETs, KW Liu, AFM Anwar, Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE, 235-240
  • Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors, MM Jahan, AFM Anwar, IEEE Electron Device Letters 16 (12), 551-553
  • Noise performance of Si/Si/sub 1-x/Ge/sub x/FETs, AFM Anwar, KW Liu, VP Kesan, IEEE Transactions on Electron Devices 42 (10), 1841-1846
  • Noise resistance of heterojunction bipolar transistors, AFM Anwar, MK Jahan, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1995, pp. 296-302
  • Shot noise in double barrier quantum structures, MM Jahan, AFM Anwar, Solid-state electronics 38 (2), 429-432
  • A noise model for high electron mobility transistors, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 41 (11), 2087-2092
  • Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs, AFM Anwar, KW Liu, Solid-state electronics 37 (9), 1585-1588
  • DC, small‐signal parameters and noise performance for SiGe/Si FETs, AFM Anwar, KW Liu, MM Jahan, VP Kesan, AIP Conference Proceedings 285 (1), 354-357
  • Noise modeling for W‐band pseudomorphic InGaAs HEMT’s, KW Liu, AFM Anwar, RD Caroll, AIP Conference Proceedings 285 (1), 280-283
  • Study of shot noise in a double barrier resonant tunneling structure, MM Jahan, AFM Anwar, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1993, pp. 189-193
  • Noise properties of AlGaAs/GaAs MODFET's, AFM Anwar, KW Liu, IEEE Transactions on Electron Devices 40 (6), 1174-1176
  • Noise Analysis of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs, KW Liu, AFM Anwar, MM Jahan, ISDRS 1, 199
  • Noise in Si / Si 1- x Ge x n-channel HEMTs and p-channel FETs, AFM Anwar, KW Liu, MM Jahan, Simulation of Semiconductor Devices and Processes, 273-276
  • Study of localization using quantum-mechanical tunneling time and modeling of shot noise, AFM Anwar, KW Liu, MM Jahan, Quantum Well and Superlattice Physics IV 1675, 376-388