Optical parameters of Zn1− xMgxO nanowires in THz regime, A Mazady, A Rivera, M Anwar, Solid-State Electronics 101, 8-12, 2014
EO/IR sensor development using nanostructures for unattended ground sensor applications, AK Sood, JW Zeller, YR Puri, T Manzur, NK Dhar, A Rivera, AFM Anwar, ...Unmanned/Unattended Sensors and Sensor Networks VIII 8184, 818408
Quantum Well Infrared Photodetectors: Theoretical Aspects, AFM Anwar, KR Lefebvre, Encyclopedia of Nanoscience and Nanotechnology 9 (224), 199-224
Electron-phonon interaction within an unbiased and biased quantum well, KR Lefebvre, AFM Anwar, IEEE journal of quantum electronics 35 (2), 216-220
Comparison of the Dark Current from an AlGaAs/GaAs and AlGaN/GaN Quantum Well [3287-22], AFM Anwar, KR Lefebvre, PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 179-187
Electron escape dynamics from a biased quantum well, KR Lefebvre, AFM Anwar, Physics and Simulation of Optoelectronic Devices V 2994, 442-452
Electron escape time from single quantum wells, KR Lefebvre, AFM Anwar, IEEE journal of quantum electronics 33 (2), 187-191
Dark Current in AlGaAsSb/InGaAs/AlGaAsSb QWIPs, KR Lefebvre, AFM Anwar, Proceedings: 1997 International Semiconductor Device Research Symposium …
Electron and hole escape times in single quantum wells, KR Lefebvre, AFM Anwar, Journal of applied physics 80 (6), 3595-3597
Far infrared Ga/sub 1-x/In/sub x/Sb/InAs-based strained-layer superlattice detectors grown by OMVPE, MM Jahan, AFM Anwar, Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp. 288-295, August 1993
